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Researcher profile

Biswarup Satpati

Biswarup Satpati contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-con

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Published work

3 published item(s)

preprint2022arXiv

Room-temperature surface multiferroicity in Y$_2$NiMnO$_6$ nanorods

We report observation of surface-defect-induced room temperature multiferroicity - surface ferromagnetism ($M_S$ at 50 kOe $\sim$0.005 emu/g), ferroelectricity ($P_R$ $\sim$2 nC/cm$^2$), and significantly large magnetoelectric coupling (decrease in $P_R$ by $\sim$80\% under $\sim$15 kOe field) - in nanorods (diameter $\sim$100 nm) of double perovskite Y$_2$NiMnO$_6$ compound. In bulk form, this system exhibits multiferroicity only below its magnetic transition temperature $T_N$ $\approx$ 70 K. On the other hand, the oxygen vacancies, formed at the surface region (thickness $\sim$10 nm) of the nanorods, yield long-range magnetic order as well as ferroelectricity via Dzyloshinskii-Moriya exchange coupling interactions with strong Rashba spin-orbit coupling. Sharp drop in $P_R$ under magnetic field indicates strong cross-coupling between magnetism and ferroelectricity as well. Observation of room temperature magnetoelectric coupling in nanoscale for a compound which, in bulk form, exhibits multiferroicity only below 70 K underscores an alternative pathway for inducing magnetoelectric multiferroicity via surface defects and, thus, in line with magnetoelectric property observed, for example, in domain walls or boundaries or interfaces of heteroepitaxially grown thin films which do not exhibit such features in their bulk.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin pumping and inverse spin Hall effect in iridium oxide

Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators, antiferromagnets are usually considered because they exhibit high spin-orbit coupling (SOC). In addition to the above materials, 5d transition metal oxide e.g. Iridium Oxide (IrO 2 ) is a potential candidate which exhibits high SOC strength. Here we report a study of spin pumping and inverse spin Hall effect (ISHE), via ferromagnetic resonance (FMR), in IrO 2 /CoFeB system. We identify the individual contribution of spin pumping and other spin rectification effects in the magnetic layer, by investigating the in-plane angular dependence of ISHE signal. Our analysis shows significant contribution of spin pumping effect to the ISHE signal. We show that polycrystalline IrO 2 thin film exhibits high spin Hall conductivity and spin Hall angle which are comparable to the values of Pt.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Strain controlled superconductivity in few-layer NbSe2

The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe2 have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor-insulator transitions in epitaxially grown few-layer NbSe2 with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor-insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high quality hetero-junction tunnel barriers to be seamlessly built into epitaxial NbSe2 itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.

0 citations0 reviewsNo code linkedOpen access