Source author record

Don Heiman

Don Heiman appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

15works
4topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2020arXiv

Strain-Tuned Magnetic Anisotropy in Sputtered Thulium Iron Garnet Ultrathin Films and TIG/Au/TIG Valve Structures

Defining the magnetic anisotropy for in-plane or out-of-plane easy axis in ferrimagnetic insulators films by controlling the strain, while maintaining high-quality surfaces, is desirable for spintronic and magnonic applications. We investigate ways to tune the anisotropy of amorphous sputtered ultrathin thulium iron garnet (TIG) films, and thus tailor their magnetic properties by the thickness (7.5 to 60 nm), substrate choice (GGG and SGGG), and crystallization process. We correlate morphological and structural properties with the magnetic anisotropy of post-growth annealed films. 30 nm thick films annealed at 600 °C show compressive strain favoring an in-plane magnetic anisotropy (IPMA), whereas films annealed above 800 °C are under a tensile strain leading to a perpendicular magnetic anisotropy (PMA). Air-annealed films present a high degree of crystallinity and magnetization saturation close to the bulk value. These results lead to successful fabrication of trilayers TIG/Au/TIG, with coupling between the TIG layers depending on Au thickness. These results will facilitate the use of TIG to create various in situ clean hybrid structures for fundamental interface exchange studies, and towards the development of complex devices. Moreover, the sputtering technique is advantageous as it can be easily scaled up for industrial applications.

preprint2020arXiv

Superconducting and Antiferromagnetic Properties of Dual-Phase V$_3$Ga

The binary compound V$_3$Ga can exhibit two near-equilibrium phases, consisting of the A15 structure that is superconducting, and the Heusler D0$_3$ structure that is semiconducting and antiferromagnetic. Density functional theory calculations show that the two phases are closely degenerate, being separated by only ~10 meV/atom. Magnetization measurements on bulk-grown samples show superconducting behavior below 14 K. These results indicate the possibility of using V$_3$Ga for quantum technology devices utilizing both superconductivity and antiferromagnetism at the same temperature.

preprint2016arXiv

Magnetic properties of low-moment ferrimagnetic Heusler Cr2CoGa thin films grown by molecular beam epitaxy

Recently, theorists have predicted many materials with a low magnetic moment and large spin-polarization for spintronic applications. These compounds are predicted to form in the inverse Heusler structure, however, many of these compounds have been found to phase segregate. In this study, ordered Cr2CoGa thin films were synthesized without phase segregation using molecular beam epitaxy. The present as-grown films exhibit a low magnetic moment from antiferromagnetically coupled Cr and Co atoms as measured with SQUID magnetometry and soft X-ray magnetic circular dichroism. Electrical measurements demonstrated a thermally-activated semiconductor-like resistivity with an activation energy of 87 meV. These results confirm spin gapless semiconducting behavior, which makes these thin films well positioned for future devices.

preprint2015arXiv

High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator

The discovery of the quantum Hall (QH) effect led to the realization of a topological electronic state with dissipationless currents circulating in one direction along the edge of a two dimensional electron layer under a strong magnetic field. The quantum anomalous Hall (QAH) effect shares a similar physical phenomenon as the QH effect, whereas its physical origin relies on the intrinsic spin-orbit coupling and ferromagnetism.Here we report the experimental observation of the QAH state in V-doped (Bi,Sb)2Te3 films with the zero-field longitudinal resistance down to 0.00013+-0.00007h/e2 (~3.35+-1.76 ohm), Hall conductance reaching 0.9998+-0.0006e2/h and the Hall angle becoming as high as 89.993+-0.004degree at T=25mK. Further advantage of this system comes from the fact that it is a hard ferromagnet with a large coercive field (Hc>1.0T) and a relative high Curie temperature. This realization of robust QAH state in hard FMTIs is a major step towards dissipationless electronic applications without external fields.

preprint2015arXiv

Inducing magnetism onto the surface of a topological crystalline insulator

Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS, a ferromagnetic insulator, induces magnetism at the interface between SnTe and EuS and thus breaks time-reversal-symmetry in the TCI. Magnetotransport experiments on SnTe-EuS-SnTe trilayer devices reveal a hysteretic lowering of the resistance at the TCI surface that coincides with an increase in the density of magnetic domain walls. This additional conduction could be a signature of topologically-protected surface states within domain walls. Additionally, a hysteretic anomalous Hall effect reveals that the usual in-plane magnetic moment of the EuS layer is canted towards a perpendicular direction at the interface. These results are evidence of induced magnetism at the SnTe-EuS interfaces resulting in broken time-reversal symmetry in the TCI.

preprint2015arXiv

Low-moment ferrimagnetic phase of the Heusler compound Cr2CoAl

Synthesizing half-metallic fully-compensated ferrimagnets that form in the inverse Heusler phase could lead to superior spintronic devices. These materials would have high spin polarization at room temperature with very little fringing magnetic fields. Previous theoretical studies indicated that Cr2CoAl should form in a stable inverse Heusler lattice due to its low activation energy. Here, stoichiometric Cr2CoAl samples were arc-melted and annealed at varying temperatures, followed by studies of their structural and magnetic properties. High-resolution synchrotron X-ray diffraction revealed a chemically ordered Heusler phase in addition to CoAl and Cr phases. Soft X-ray magnetic circular dichroism revealed that the Cr and Co magnetic moments are antiferromagnetically oriented leading to the observed low magnetic moment in Cr2CoAl.

preprint2015arXiv

Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb$_{2-x}$V$_x$Te$_3$ hybrid heterostructure, where V doping is used to drive the TI (Sb$_{2}$Te$_3$) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping provides insights into controllable engineering of magnetic order using a hybrid heterostructure.

preprint2014arXiv

Atomic moments in Mn2CoAl thin films analyzed by X-ray magnetic circular dichroism

Spin gapless semiconductors are known to be strongly affected by structural disorder when grown epitaxially as thin films. The magnetic properties of Mn2CoAl thin films grown on GaAs (001) substrates are investigated here as a function of annealing. This study investigates the atomic-specific magnetic moments of Mn and Co atoms measured through X-ray magnetic circular dichroism as a function of annealing and the consequent structural ordering. The results indicate that the structural distortion mainly affects the Mn atoms as seen by the reduction of the magnetic moment from its predicted value.

preprint2014arXiv

Magnetic Properties and Large Coercivity of MnxGa Nanostructures

To investigate structure-property correlations, high-coercivity MnxGa nanoparticles were synthesized by the method of sequential deposition of Ga and Mn fluxes using molecular beam epitaxy. Spontaneous nanostructuring was assisted by the use of an Au precursor and thermal annealing, and the growth properties, structure and magnetic properties were characterized. Atomic force microscopy revealed average particle dimensions of 100 nm and X-ray diffraction revealed a dominant tetragonal D022 crystal structures. Magnetic characterization at room temperature identified the presence of two magnetic phases, dominated by a high-coercivity (2.3 T) component in addition to a low-coercivity component.

preprint2014arXiv

Quantum Coherent Transport in SnTe Topological Crystalline Insulator Thin Films

Topological crystalline insulators (TCI) are unique systems where a band inversion that is protected by crystalline mirror symmetry leads to a multiplicity of topological surface states. Binary SnTe is an attractive lead-free TCI compound; the present work on high-quality thin films provides a route for increasing the mobility and reducing the carrier density of SnTe without chemical doping. Results of quantum coherent magnetotransport measurements reveal a multiplicity of Dirac surface states that are unique to TCI. Modeling of the weak antilocalization shows variations in the extracted number of carrier valleys that reflect the role of coherent intervalley scattering in coupling different Dirac states on the degenerate TCI surface.

preprint2013arXiv

Linear magnetoresistance in topological insulators: Quantum phase coherence effects at high temperatures

In addition to the weak antilocalization cusp observed in the magnetoresistance (MR) of topological insulators at low temperatures and low magnetic fields, we find that the high-field MR in Bi2Te2Se is linear in field. At fields up to B=14T the slope of this linear-like MR is nearly independent of temperature over the range T=7 to 150K. We find that the linear MR arises from the competition between a logarithmic phase coherence component and a quadratic component. The quantum phase coherence dominates up to high temperatures, where the coherence length remains longer than the mean free path of electrons.

preprint2013arXiv

Magnetic and transport properties of Mn2CoAl oriented thin films

The structure, magnetic and transport properties of thin films of the Heusler ferrimagnet Mn_{2}CoAl have been investigated for properties related to spin gapless semiconductors. Oriented films were grown by molecular beam epitaxy on GaAs substrates and the structure was found to transform from tetragonal to cubic for increasing annealing temperature. The anomalous Hall resistivity is found to be proportional to the square of the longitudinal resistivity and magnetization expected for a topological Berry curvature origin. A delicate balance of the spin-polarized carrier type when coupled with voltage gate-tuning could significantly impact advanced electronic devices.

preprint2012arXiv

Modified electrical transport probe design for standard magnetometer

Making electrical transport measurements on a material is often a time consuming process that involves testing a large number of samples. It is thus inconvenient to wire up and rewire samples on to a sample probe. We therefore present a method of modifying Quantum Design's MPMS SQUID magnetometer transport probe that simplifies the process of sample mounting. One of the difficulties to overcome is the small diameter of the sample space. A small socket is designed and mounted on the probe so that various samples mounted on individual headers can be readily exchanged in the socket. We also present some test results on the topological insulator Bi2Te2Se using the modified probe.

preprint2010arXiv

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (MIT). The Hall carrier density increases by 4 orders of magnitude at the MIT and accounts almost entirely for the resistance change. The Hall mobility varies little across the MIT and remains low, ~0.1cm2/V sec. Electrons are found to be the major carriers on both sides of the MIT. Small positive magnetoresistance in the semiconducting phase is measured.

preprint2010arXiv

Possible Room Temperature Ferromagnetism in Hydrogenated Carbon Nanotubes

We find that ferromagnetism can be induced in carbon nanotubes (CNTs) by introducing hydrogen. Multiwalled CNTs grown inside porous alumina templates contain a large density of defects resulting in significant hydrogen uptake when annealed at high temperatures. This hydrogen incorporation produces H-complex and adatom magnetism which generates a sizeable ferromagnetic moment and a Curie temperature near Tc=1000 K. We studied the conditions for the incorporation of hydrogen, the temperature-dependent magnetic behavior, and the dependence of the ferromagnetism on the size of the nanotubes.