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Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact.

preprint2014arXivOpen access
Debasree ChowdhuryDebabrata Ghose*Safiul Alam MollickBiswarup SatpatiSatya Ranjan Bhattacharyya
cond-mat.mtrl-sci
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Open access5 authors1 topic
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Debasree ChowdhuryDebabrata Ghose*Safiul Alam MollickBiswarup SatpatiSatya Ranjan Bhattacharyya

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