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Debasree Chowdhury

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Published work

4 published item(s)

preprint2019arXiv

Surface scaling behaviour of size-selected Ag-nanocluster film growing under subsequent shadowing process

Surface morphology of size-selected silver nanocluster films grown by dc magnetron sputtering has been investigated by means of an atomic force microscopy (AFM). From the height-height correlation functions ( HHCF) obtained from corresponding AFM images, the scaling exponents are calculated and two types of growth regimes have been observed. In the first regime, the growth exponent is found to be \b{eta}1 = 0.27\pm0.07 close to the KPZ growth exponent, while in the second growth regime shadowing effect plays dominant role which gives the growth exponent value \b{eta}2 = 0.88\pm0.28. On the other hand for the whole deposition regime, the roughness exponent value is found to be constant around α= 0.76\pm0.02. UV-vis spectroscopy measurement suggests how the average reflectance of the film surface changes with different growth times.

preprint2016arXiv

Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

preprint2016arXiv

Temperature and high fluence induced ripple rotation on Si(100) surface

Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each temperature, the ion fluence is systematically varied in a wide range from $\sim$ 1$\times$10$^{18}$cm$^{-2}$ to 1$\times$10$^{20}$cm$^{-2}$. The ion sputtered surface morphologies are characterized by atomic force microscopy and high-resolution cross-sectional transmission electron microscopy. At room temperature, the ion sputtered surfaces show periodic ripple nanopatterns and their wave-vector remains parallel to ion beam projection for entire fluence range. With increase of substrate temperature, these patterns tend to demolish and reduce into randomly ordered mound-like structures around 350$^{\circ}$C. Further rise in temperature above 400$^{\circ}$C leads, surprisingly, orthogonally rotated ripples beyond fluence 5$\times$10$^{19}$cm$^{-2}$. All the results are discussed combining the theoretical framework of linear, non-linear and recently developed mass redistribution continuum models of pattern formation by IBS. These results have technological importance regarding the control over ion induced pattern formation as well as it provides useful information for further progress in theoretical field.

preprint2014arXiv

Nanorippling of GaAs (001) surface near the threshold energy of sputtering at normal ion incidence

Ripple formation driven by Ehrlich-Schwoebel barrier is evidenced for normal incidence 30 eV Ar+ bombardment of GaAs (001) surface at elevated target temperature. The pattern follows the symmetry of the bombarded crystal surface. The results can be described by a non-linear continuum equation based on biased diffusion of adspecies created by ion impact.