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Bing Shen

Bing Shen contributes to research discovery and scholarly infrastructure.

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Published work

9 published item(s)

preprint2023arXiv

Coexistence of zigzag antiferromagnetic order and superconductivity in compressed NiPSe3

NiPSe3 is regarded as a bandwidth-controlled Mott insulator, distinct from the widely studied Mott insulating magnetic graphene MPSe3 (M = Mn and Fe) family. By employing high-pressure synchrotron X-ray diffraction, we observe two structural transitions as a function of pressure. With the help of first-principles calculations, we discover the antiferromagnetic (AFM) moment directions of NiPSe3 switch from out-of-plane to in-plane and the honeycomb layers slide relative to each other at the first structural transition. The in-plane AFM order persists until the second structural transition, whereupon the two-dimensional (2D) structure assumes a more three-dimensional (3D) character. A bandwidth-controlled Mott insulator-metal transition (IMT) occurs between the two structural transitions at 8.0 GPa, concomitant with the emergence of superconductivity with 4.8 K. The superconductivity in NiPSe3 emerging in the 2D monoclinic phase coexists with the in-plane AFM order and continues into the 3D trigonal phase. Our electronic structure calculations reveal that the Mott IMT and superconductivity in NiPSe3 are both closely related to the enhanced Se2- 4p and Ni2+ 3d electronic hybridizations under pressure. From these results, we construct the temperature-pressure electronic phase diagram of NiPSe3, revealing rich physics and many similarities with copper oxide and iron-based superconductors.

preprint2020arXiv

Half-Magnetic Topological Insulator

Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi2Te4 surface but not at the opposite surface terminated by triple Bi2Te3 layers. Our angle-resolved photoemission spectroscopy measurements unveil a massive Dirac gap at the MnBi2Te4 surface, and gapless Dirac cone on the other side. Remarkably, the Dirac gap (~28 meV) at MnBi2Te4 surface decreases monotonically with increasing temperature and closes right at the Curie temperature, thereby representing the first smoking-gun spectroscopic evidence of magnetization-induced topological surface gap among all known magnetic topological materials. We further demonstrate theoretically that the half-magnetic topological insulator is desirable to realize the half-quantized surface anomalous Hall effect, which serves as a direct proof of the general concept of axion electrodynamics in condensed matter systems.

preprint2020arXiv

Pressure tuning of structural and magnetic transitions in EuAg$_4$As$_2$

We report temperature dependent measurements of ambient pressure specific heat, magnetic susceptibility, anisotropic resistivity and thermal expansion as well as in-plane resistivity under pressure up to 20.8 kbar on single crystals of EuAg$_4$As$_2$. Based on thermal expansion and in-plane electrical transport measurements at ambient pressure this compound has two, first order, structural transitions in 80 - 120 K temperature range. Ambient pressure specific heat, magnetization and thermal expansion measurements show a cascade of up to seven transitions between 8 and 16 K associated with the ordering of the Eu$^{2+}$ moments. In-plane electrical transport is able to detect more prominent of these transitions: at 15.5, 9.9, and 8.7 K as well as a weak feature at 11.8 K at ambient pressure. Pressure dependent electrical transport data show that the magnetic transitions shift to higher temperatures under pressure, as does the upper structural transition, whereas the lower structural transition is suppressed and ultimately vanishes. A jump in resistivity, associated with the upper structural transition, decreases under pressure with an extrapolated disappearance (or a change of sign) by 30-35 kbar. In the 10 - 15 kbar range a kink in the pressure dependence of the upper structural transition temperature as well as the high and low temperature in-plane resistivities suggest that a change in the electronic structure may occur in this pressure range. The results are compared with the literature data for SrAg$_4$As$_2$.

preprint2020arXiv

Structural distortion and incommensurate noncollinear magnetism in EuAg4As2

Layered pnictide materials have provided a fruitful platform to study various emergent phenomena, including superconductivity, magnetism, charge density waves, etc. Here we report the observation of structural distortion and noncollinear magnetism in layered pnictide EuAg$_4$As$_2$ via transport, magnetization, single crystal X-ray and neutron diffraction data. EuAg$_4$As$_2$ single crystal shows a structural distortion at 120 K, where two sets of superlattice peaks with the propagation vectors of $q_1=\pm$(0, 0.25, 0.5) and $q_2=\pm$(0.25, 0, 1) emerge. Between 9 K to 15 K, the hexagonal Eu$^{2+}$ sub-lattice enters an unpinned state, with magnetic Bragg reflections pictured as circular-sectors. Below 9 K, it orders in an incommensurate noncollinear antiferromagnetic state with a well-defined propagation wavevector of (0, 0.1, 0.12), where the magnetic structure is helical along the $c$ axis and cycloidal along the $b$ axis with a moment of 6.4 $μ_B$/Eu$^{2+}$. Furthermore, rich magnetic phases under magnetic fields, large magnetoresistance, and strong coupling between charge carriers and magnetism in EuAg$_4$As$_2$ are revealed.

preprint2019arXiv

In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$

Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields applied within the $ab$-plane while are absent for fields parallel to the $c$-axis. Anisotropic magnetic phase diagrams are observed and the orientation of the ground magnetic moment is found to be within the $ab$-plane. The magnetoresistivity for EuIn$_2$As$_2$ behaves non-monotonic as a function of field strength. It exhibits angular dependent evolving due to field-driven and temperature-driven magnetic states. These results indicate that the magnetic states of EuIn$_2$As$_2$ strongly affect the transport properties as well as the topological nature.

preprint2019arXiv

Large negative magnetoresistance in the new antiferromagnetic rare-earth dichalcogenide EuTe$_2$

We report the synthesis and characterization of a rare-earth dichalcogenide EuTe$_2$. An antiferromagnetic transition was found at T$_M$ = 11 K. The antiferromagnetic order can be tuned by an applied magnetic field to access a first-order spin flop transition and a spin flip transition. These transitions are associated with a giant negative magnetoresistance with a value of nearly 100\%. Heat capacity measurements reveal strong electronic correlations and a reduced magnetic entropy. Furthermore, density functional theory calculations demonstrate that the electrons near the Fermi surface mainly originate from the Te 5$p$ orbitals and the magnetism is dominated by localized electrons from the Eu 4$f$ orbitals. These results suggest that both the RKKY and Kondo interactions between the local moments and itinerant electrons play crucial roles in the magnetism and large negative magnetoresistance of EuTe$_2$.

preprint2019arXiv

Optical Control of Chiral Charge Pumping in a Topological Weyl Semimetal

Solids with topologically robust electronic states exhibit unusual electronic and optical transport properties that do not exist in other materials. A particularly interesting example is chiral charge pumping, the so-called chiral anomaly, in recently discovered topological Weyl semimetals, where simultaneous application of parallel DC electric and magnetic fields creates an imbalance in the number of carriers of opposite topological charge (chirality). Here, using time-resolved terahertz measurements on the Weyl semimetal TaAs in a magnetic field, we optically interrogate the chiral anomaly by dynamically pumping the chiral charges and monitoring their subsequent relaxation. Theory based on Boltzmann transport shows that the observed effects originate from an optical nonlinearity in the chiral charge pumping process. Our measurements reveal that the chiral population relaxation time is much greater than 1 ns. The observation of terahertz-controlled chiral carriers with long coherence times and topological protection suggests the application of Weyl semimetals for quantum optoelectronic technology.

preprint2019arXiv

Optical evidence of the chiral magnetic anomaly in Weyl semimetal TaAs

Chiral pumping from optical electric fields oscillating at THz frequencies is observed in the Weyl material TaAs with electric and magnetic fields aligned along both the a- and c-axes. Free carrier spectral weight enhancement is measured directly for the first time, confirming theoretical expectations of chiral pumping. A departure from linear field-dependence of the Drude weight is observed at the highest fields in the quantum limit, providing direct evidence of field-dependent Fermi velocity of the chiral Landau level. Implications for the chiral magnetic effect in Weyl semimetals from the optical f-sum rule are discussed.

preprint2019arXiv

Uncovering Electron-Phonon Scattering and Phonon Dynamics in Type-I Weyl Semimetals

Weyl semimetals are 3D phases of matter with topologically protected states that have remarkable macroscopic transport behaviors. As phonon dynamics and electron-phonon scattering play a critical role in the electrical and thermal transport, we pursue a fundamental understanding of the origin of these effects in type-I Weyl semimetals NbAs and TaAs. In the temperature-dependent Raman spectra of NbAs, we reveal a previously unreported Fano lineshape, a signature stemming from the electron-phonon interaction. Additionally, the temperature dependence of the $A_{1}$ phonon linewidths in both NbAs and TaAs strongly deviate from the standard model of anharmonic decay. To capture the mechanisms responsible for the observed Fano asymmetry and the atypical phonon linewidth, we present first principles calculations of the phonon self-energy correction due to the electron-phonon interaction. Finally, we investigate the relationship between Fano lineshape, electron-phonon coupling, and locations of the Weyl points in these materials. Through this study of the phonon dynamics and electron-phonon interaction in these Weyl semimetals, we consider specific microscopic pathways which contribute to the nature of their macroscopic transport.