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Benoit Hackens

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cond-mat.mes-hall cond-mat.mtrl-sci physics.app-ph physics.optics

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preprint2022arXiv

Spectroscopic assessment of short-term nitric acid doping of epitaxial graphene

This work reports information on the transience of hole doping in epitaxial graphene devices when nitric acid is used as an adsorbent. Under vacuum conditions, desorption processes are monitored by electrical and spectroscopic means to extract the relevant timescales from the corresponding data. It is of vital importance to understand the reversible nature of hole doping because such device processing can be a suitable alternative to large-scale, metallic gating. Most measurements are performed post-exposure at room temperature, and, for some electrical transport measurements, at 1.5 K. Vacuum conditions are applied to many measurements to replicate the laboratory conditions under which devices using this doping method would be measured. The relevant timescales from transport measurements are compared with results from X-ray photoelecton spectroscopy and Fourier transform infrared spectroscopy measurements, with the latter performed at ambient conditions and accompanied by calculations of the spectra in the Reststrahlen band.

preprint2021arXiv

Genetic-algorithm-aided ultra-broadband perfect absorbers using plasmonic metamaterials

Complete absorption of electromagnetic waves is paramount in today's applications, ranging from photovoltaics to cross-talk prevention into sensitive devices. In this context, we use a genetic algorithm (GA) strategy to optimize absorption properties of periodic arrays of truncated square-based pyramids made of alternating stacks of metal/dielectric layers. We target ultra-broadband quasi-perfect absorption of normally incident electromagnetic radiations in the visible and near-infrared ranges (wavelength comprised between 420 and 1600 nm). We compare the results one can obtain by considering one, two or three stacks of either Ni, Ti, Al, Cr, Ag, Cu, Au or W for the metal, and poly(methyl methacrylate) (PMMA) for the dielectric. More than 10^17 configurations of geometrical parameters are explored and reduced to a few optimal ones. This extensive study shows that Ni/PMMA, Ti/PMMA, Cr/PMMA and W/PMMA provide high-quality solutions with an integrated absorptance higher than 99% over the considered wavelength range, when considering realistic implementation of these ultra-broadband perfect electromagnetic absorbers. Robustness of optimal solutions with respect to geometrical parameters is investigated and local absorption maps are provided. Moreover, we confirm that these optimal solutions maintain quasi-perfect broadband absorption properties over a broad angular range when changing the inclination of the incident radiation. The study also reveals that noble metals (Au, Ag, Cu) do not provide the highest performance for the present application.

preprint2014arXiv

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial half-cycle PE-ALD, the upper graphene layer reacts with the metal precursor, forming uniform nucleation islands or an active metallic carbide layer. After monolayer dielectric coverage, the bottom graphene layer has additional protection. The upper graphene layer serves as a sacrificial layer, which not only promotes the adhesion of dielectric on graphene, but also protects the lattice symmetry of the bottom graphene layer. Our results indicate that bilayer graphene allows for controlling/limiting the degree of defect during the ALD of dielectrics and could be a good starting material for building filed effect transistors and sensing devices.

preprint2012arXiv

A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can counter-intuitively degrade the overall network performance. Recently, we have extended the concept of Braess paradox to semiconductor mesoscopic networks, whose transport properties are governed by quantum physics. In this paper, we demonstrate theoretically that, alike in classical systems, congestion plays a key role in the occurrence of a Braess paradox in mesoscopic networks.

preprint2012arXiv

Direct growth of graphitic carbon on Si(111)

Appropriate conditions for direct growth of graphitic films on Si(111) 7$\times$7 are investigated. The structural and electronic properties of the samples are studied by Auger Electron Spectroscopy (AES), X-ray Photoemission Spectroscopy (XPS), Low Energy Electron Diffraction (LEED), Raman spectroscopy and Scanning Tunneling Microscopy (STM). In particular, we present STM images of a carbon honeycomb lattice grown directly on Si(111). Our results demonstrate that the quality of graphene films formed depends not only on the substrate temperature but also on the carbon buffer layer at the interface. This method might be very promising for graphene-based electronics and its integration into the silicon technology.

preprint2011arXiv

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images.