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Hermann Sellier

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Published work

4 published item(s)

preprint2022arXiv

Imaging tunable quantum Hall broken-symmetry orders in graphene

When electrons populate a flat band their kinetic energy becomes negligible, forcing them to organize in exotic many-body states to minimize their Coulomb energy. The zeroth Landau level of graphene under magnetic field is a particularly interesting strongly interacting flat band because inter-electron interactions are predicted to induce a rich variety of broken-symmetry states with distinct topological and lattice-scale orders. Evidence for these stems mostly from indirect transport experiments that suggest that broken-symmetry states are tunable by boosting the Zeeman energy or by dielectric screening of the Coulomb interaction. However, confirming the existence of these ground states requires a direct visualization of their lattice-scale orders. Here, we image three distinct broken-symmetry phases in graphene using scanning tunneling spectroscopy. We explore the phase diagram by tuning the screening of the Coulomb interaction by a low or high dielectric constant environment, and with a magnetic field. In the unscreened case, we unveil a Kekulé bond order, consistent with observations of an insulating state undergoing a magnetic-field driven Kosterlitz-Thouless transition. Under dielectric screening, a sublattice-unpolarized ground state emerges at low magnetic fields, and transits to a charge-density-wave order with partial sublattice polarization at higher magnetic fields. The Kekulé and charge-density-wave orders furthermore coexist with additional, secondary lattice-scale orders that enrich the phase diagram beyond current theory predictions. This screening-induced tunability of broken-symmetry orders may prove valuable to uncover correlated phases of matter in other quantum materials.

preprint2019arXiv

Helical quantum Hall phase in graphene on SrTiO$_3$

The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation.

preprint2012arXiv

A new transport phenomenon in nanostructures: A mesoscopic analog of the Braess paradox encountered in road networks

The Braess paradox, known for traffic and other classical networks, lies in the fact that adding a new route to a congested network in an attempt to relieve congestion can counter-intuitively degrade the overall network performance. Recently, we have extended the concept of Braess paradox to semiconductor mesoscopic networks, whose transport properties are governed by quantum physics. In this paper, we demonstrate theoretically that, alike in classical systems, congestion plays a key role in the occurrence of a Braess paradox in mesoscopic networks.

preprint2011arXiv

On the imaging of electron transport in semiconductor quantum structures by scanning-gate microscopy: successes and limitations

This paper presents a brief review of scanning-gate microscopy applied to the imaging of electron transport in buried semiconductor quantum structures. After an introduction to the technique and to some of its practical issues, we summarise a selection of its successful achievements found in the literature, including our own research. The latter focuses on the imaging of GaInAs-based quantum rings both in the low magnetic field Aharonov-Bohm regime and in the high-field quantum Hall regime. Based on our own experience, we then discuss in detail some of the limitations of scanning-gate microscopy. These include possible tip induced artefacts, effects of a large bias applied to the scanning tip, as well as consequences of unwanted charge traps on the conductance maps. We emphasize how special care must be paid in interpreting these scanning-gate images.