BZPEERPapers, people, evidence and research paths
Menu

Discover

SearchFind papers, people, topics, institutions and opportunities from one place.GraphSee how papers, authors, topics and evidence connect.

Research tools

HomeContinue from the papers, people and topics that matter now.CollectionsTurn saved papers into reading lists, evidence maps and shareable context.ResearchReconstruct the path that led you from search to paper to question.CollaborationMove from a paper, topic or expert request into a focused thread.PublishCreate full-text research articles with metadata, formulas and versions.

Network

ExpertsFind specialists whose work and reviews explain why they can help.CommunitiesJoin research groups organized around papers, topics and shared evidence.

Opportunities

ListingsBrowse roles, calls and collaborations connected to real research context.

Account

Log inReturn to your saved papers, graph views and active threads.Create accountStart saving papers, building a research trail and joining teams.
Log inCreate account

Source author record

Bart Sorée

Bart Sorée appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record
cond-mat.mes-hallcond-mat.stat-mechcond-mat.str-elEmerging Technologiesmath.NANumerical Analysisphysics.app-phphysics.comp-ph

Catalog footprint

What is connected

15works
8topics
4close collaborators

Actions

Connect this record

Log in to claim
Open graphBrowse works

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

15 published item(s)

preprint2022arXiv

Power transfer in magnetoelectric resonators

We derive an analytical model for the power transfer in a magnetoelectric film bulk acoustic resonator consisting of a piezoelectric--magnetostrictive bilayer. The model describes the dynamic magnetostrictive influence on the elastodynamics via an effective frequency-dependent stiffness constant. This allows for the calculation of both the magnetic and elastic power absorption in the resonator as well as of its energy efficiency when such a resonator is considered as a magnetic transducer. The model is then applied to example systems consisting of piezoelectric ScAlN and magnetostrictive CoFeB, Ni, or Terfenol-D layers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Torque field and skyrmion movement by spin transfer torque in a quasi-2d interface in presence of strong spin-orbit interaction

We investigate the torque field and skyrmion movement at an interface between a ferromagnet hosting a skyrmion and a material with strong spin-orbit interaction. We analyze both semiconductor materials and topological insulators using a Hamiltonian model that includes a linear term. The spin torque inducing current is considered to flow in the single band limit therefore a quantum model of current is used. Skyrmion movement due spin transfer torque proves to be more difficult in presence of spin orbit interaction in the case where only interface in-plane currents are present. However, edge effects in narrow nanowires can be used to drive the skyrmion movement and to exert a limited control on its movement direction. We also show the differences and similarities between torque fields due to electric current in the many and in the single band limits.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

2D ferromagnetism at finite temperatures under quantum scrutiny

Recent years have seen a tremendous rise of two-dimensional (2D) magnetic materials, several of which verified experimentally. However, most of the theoretical predictions to date rely on ab-initio methods, at zero temperature and fluctuations-free, while one certainly expects detrimental quantum fluctuations at finite temperatures. Here we present the solution of the quantum Heisenberg model for honeycomb/hexagonal lattices with anisotropic exchange interaction up to third nearest neighbors and in an applied field in arbitrary direction, that answers the question whether long-range magnetization can indeed survive in the ultrathin limit of materials, up to which temperature, and what the characteristic excitation (magnon) frequencies are, all essential to envisaged applications of magnetic 2D materials. We find that long-range magnetic order persists at finite temperature for materials with overall easy-axis anisotropy. We validate the calculations on the examples of monolayer CrI3, CrBr3 and MnSe2. Moreover, we provide an easy-to-use tool to calculate Curie temperatures of new 2D computational materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Confined magnetoelastic waves in thin waveguides

The characteristics of confined magnetoelastic waves in nanoscale ferromagnetic magnetostrictive waveguides have been investigated by a combination of analytical and numerical calculations. The presence of both magnetostriction and inverse magnetostriction leads to the coupling between confined spin waves and elastic Lamb waves. Numerical simulations of the coupled system have been used to extract the dispersion relations of the magnetoelastic waves as well as their mode profiles.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tanh-sinh quadrature for single and multiple integration using floating-point arithmetic

The problem of estimating single- and multi-dimensional integrals, with or without end-point singularities, is prevalent in all fields of scientific research, and in particular in physics. Although tanh-sinh quadrature is known to handle most of these cases excellently, its use is not widely spread among physicists. Moreover, while most calculations are limited by the use of finite-precision floating-point arithmetic, similar considerations for tanh-sinh quadrature are mostly lacking in literature, where infinite-precision floating-point numbers are often assumed. Also little information is available on the application of tanh-sinh quadrature to multiple integration. We have investigated the risks and limitations associated with limited-precision floating-point numbers when using tanh-sinh quadrature for both single and multiple integration, while obtaining excellent convergence rates. In addition, this paper provides recommendations for a straightforward implementation using limited-precision floating-point numbers and for avoiding numerical instabilities.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Inter-ribbon tunneling in graphene: an atomistic Bardeen approach

A weakly coupled system of two crossed graphene nanoribbons exhibits direct tunneling due to the overlap of the wavefunctions of both ribbons. We apply the Bardeen transfer Hamiltonian formalism, using atomistic band structure calculations to account for the effect of the atomic structure on the tunneling process. The strong quantum-size confinement of the nanoribbons is mirrored by the one-dimensional character of the electronic structure, resulting in properties that differ significantly from the case of inter-layer tunneling, where tunneling occurs between bulk two-dimensional graphene sheets. The current-voltage characteristics of the inter-ribbon tunneling structures exhibit resonance, as well as stepwise increases in current. Both features are caused by the energetic alignment of one-dimensional peaks in the density-of-states of the ribbons. Resonant tunneling occurs if the sign of the curvature of the coupled energy bands is equal, whereas a step-like increase of the current occurs if the signs are opposite. Changing the doping modulates the onset- voltage of the effects as well as their magnitude. Doping through electrostatic gating makes these structures promising for application towards steep slope switching devices. Using the atomistic Bardeen transfer Hamiltonian method, inter-ribbon tunneling can be studied for the whole range of two-dimensional materials, such as transition metal dichalcogenides. The effects of resonance and of step-like increases of the current, observed in graphene ribbons, are also expected in ribbons made from these alternative two-dimensional materials, because these effects are manifestations of the one-dimensional character of the density-of-states.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Skyrmion-induced bound states on the surface of 3D Topological Insulators

The interaction between the surface of a 3D topological insulator and a skyrmion / anti-skyrmion structure is studied in order to investigate the possibility of electron confinement due to skyrmion presence. Both hedgehog (Néel) and vortex (Bloch) skyrmions are considered. For the hedgehog skyrmion the in-plane components cannot be disregarded and their interaction with the surface state of the TI has to be taken into account. A semi-classical description of the skyrmion chiral angle is obtained using the variational principle. It is shown that both the hedgehog and the vortex skyrmion can induce bound states on the surface of the TI. However, the number and the properties of these states depend strongly on the skyrmion type and on the skyrmion topological number $N_{Sk}$. The probability densities of the bound electrons are also derived where it is shown that they are localized within the skyrmion region.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

The Miniband Alignment Field-Effect Transistor: a superlattice-based steep-slope nanowire FET

This work investigates energy filtering in nanowires, where pass and stopbands are obtained by including superlattices in the wire. When a pair of such superlattices is placed in series, each being controlled by a gate, it can act as a transistor where the (mis-)alignment of its minibands turns the device on (off). It is shown that, in the ballistic current-regime, the transition between the on and off state occurs in a narrow gate-bias range, giving rise to sub-60 mV per decade switching behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Analytic solution of Ando's surface roughness model with finite domain distribution functions

Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, such as the Prange-Nee approximation. Accurate and fast simulations can still be performed without invoking these overlap approximations by averaging over roughness profiles using finite domain distribution functions to obtain an analytic solution for the scattering rates. The simulations indicate that overlap approximations, while predicting a resistivity that agrees more or less with our novel approach, poorly estimate the underlying scattering rates. All methods show that a momentum gap between left- and right-moving electrons at the Fermi level, surpassing a critical momentum gap, gives rise to a substantial decrease in resistivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes

We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modeling and tackling resistivity scaling in metal nanowires

A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modeling of inter-ribbon tunneling in graphene

The tunneling current between two crossed graphene ribbons is described invoking the empirical pseudopotential approximation and the Bardeen transfer Hamiltonian method. Results indicate that the density of states is the most important factor determining the tunneling current between small (nm) ribbons. The quasi-one dimensional nature of graphene nanoribbons is shown to result in resonant tunneling.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modeling surface roughness scattering in metallic nanowires

Ando's model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribution functions on a finite domain with analytical expressions for the average surface roughness matrix elements. This approach is valid for any roughness size and extends beyond the commonly used Prange-Nee approximation. The resistivity scaling is obtained from the self-consistent relaxation time solution of the Boltzmann transport equation and is compared to Prange-Nee's approach and other known methods. The results show that a substantial drop in resistivity can be obtained for certain diameters by achieving a large momentum gap between Fermi level states with positive and negative momentum in the transport direction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resistivity scaling and electron relaxation times in metallic nanowires

We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Generalized phonon-assisted Zener tunneling in indirect semiconductors with non-uniform electric fields : a rigorous approach

A general framework to calculate the Zener current in an indirect semiconductor with an externally applied potential is provided. Assuming a parabolic valence and conduction band dispersion, the semiconductor is in equilibrium in the presence of the external field as long as the electronphonon interaction is absent. The linear response to the electron-phonon interaction results in a non-equilibrium system. The Zener tunneling current is calculated from the number of electrons making the transition from valence to conduction band per unit time. A convenient expression based on the single particle spectral functions is provided, enabling the numerical calculation of the Zener current under any three-dimensional potential profile. For a one dimensional potential profile an analytical expression is obtained for the current in a bulk semiconductor, a semiconductor under uniform field and a semiconductor under a non-uniform field using the WKB (Wentzel-Kramers-Brillouin) approximation. The obtained results agree with the Kane result in the low field limit. A numerical example for abrupt p - n diodes with different doping concentrations is given, from which it can be seen that the uniform field model is a better approximation than the WKB model but a direct numerical treatment is required for low bias conditions.

0 citations0 reviewsNo code linkedOpen access