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Kristof Moors

Kristof Moors appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.str-el

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Published work

9 published item(s)

preprint2025arXiv

Optimizing proximitized magnetic topological insulator nanoribbons for Majorana bound states

Heterostructures comprised of a magnetic topological insulator (MTI) placed in the proximity of an $s$-wave superconductor have emerged as a platform for the practical realization of Majorana bound states (MBSs). More specifically, it has been theoretically predicted that MBS can appear in proximitized MTI nanoribbons (PNRs) in the quantum anomalous Hall regime. As with all MBS platforms, disorder and device imperfections can be detrimental to the formation of robust and well-separated MBSs that are suitable for fusion and braiding experiments. Here, we identify the optimal conditions for obtaining a topological superconducting gap that is robust against disorder, with spatially separated stable MBSs in PNRs, and introduce a figure of merit that encompasses these conditions. Particular attention is given to the thin-film limit of magnetic topological insulators (MTIs), where the hybridization of the surface states cannot be neglected, and to the role of electron-hole asymmetry in the low-energy physics of the system. Based on our numerical results, we find that (1) MTI thin films that are normal (rather than quantum spin Hall) insulators for zero magnetization are favorable, (2) strong electron-hole asymmetry causes the stability and robustness of MBS to be very different for chemical potentials above or below the Dirac point, and (3) the magnetization strength should preferably be comparable to the hybridization or confinement energy of the surface states, whichever is largest.

0 citations0 reviewsNo code linkedOpen access
preprint2025arXiv

Robust quantum anomalous Hall effect with spatially uncorrelated disorder

In magnetic topological insulators, a phase transition between a quantum anomalous Hall (QAH) and an Anderson localization phase can be triggered by the rotation of an applied magnetic field. Without the scattering paths along magnetic domains, this phase transition is governed by scattering induced by nonmagnetic disorder. We show that the QAH phase is strikingly robust in the presence of spatially uncorrelated disorder. The robustness is attributed to the quantum confinement induced by the short correlation length of the disorder. The critical behavior near the phase transition suggests a picture distinct from quantum percolation. This provides new insights on the robustness of the QAH effect in magnetic topological insulators with atomic defects, impurities, and dopants.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Gate-induced decoupling of surface and bulk state properties in selectively-deposited Bi$_2$Te$_3$ nanoribbons

Three-dimensional topological insulators (TIs) host helical Dirac surface states at the interface with a trivial insulator. In quasi-one-dimensional TI nanoribbon structures the wave function of surface charges extends phase-coherently along the perimeter of the nanoribbon, resulting in a quantization of transverse surface modes. Furthermore, as the inherent spin-momentum locking results in a Berry phase offset of $π$ of self-interfering charge carriers an energy gap within the surface state dispersion appears and all states become spin-degenerate. We investigate and compare the magnetic field dependent surface state dispersion in selectively deposited Bi$_2$Te$_3$ TI micro- and nanoribbon structures by analysing the gate voltage dependent magnetoconductance at cryogenic temperatures. While in wide microribbon devices the field effect mainly changes the amount of bulk charges close to the top surface we identify coherent transverse surface states along the perimeter of the nanoribbon devices responding to a change in top gate potential. We quantify the energetic spacing in between these quantized transverse subbands by using an electrostatic model that treats an initial difference in charge carrier densities on the top and bottom surface as well as remaining bulk charges. In the gate voltage dependent transconductance we find oscillations that change their relative phase by $π$ at half-integer values of the magnetic flux quantum applied coaxial to the nanoribbon, which is a signature for a magnetic flux dependent topological phase transition in narrow, selectively deposited TI nanoribbon devices.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Magnetotransport signatures of three-dimensional topological insulator nanostructures

We study the magnetotransport properties of patterned 3D topological insulator nanostructures with several leads, such as kinks or Y-junctions, near the Dirac point with analytical as well as numerical techniques. The interplay of the nanostructure geometry, the external magnetic field and the spin-momentum locking of the topological surface states lead to a richer magnetoconductance phenomenology as compared to straight nanowires. Similar to straight wires, a quantized conductance with perfect transmission across the nanostructure can be realized across a kink when the input and output channels are pierced by a half-integer magnetic flux quantum. Unlike for straight wires, there is an additional requirement depending on the orientation of the external magnetic field. A right-angle kink shows a unique $π$-periodic magnetoconductance signature as a function of the in-plane angle of the magnetic field. For a Y-junction, the transmission can be perfectly steered to either of the two possible output legs by a proper alignment of the external magnetic field. These magnetotransport signatures offer new ways to explore topological surface states and could be relevant for quantum transport experiments on nanostructures which can be realized with existing fabrication methods.

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preprint2015arXiv

Analytic solution of Ando's surface roughness model with finite domain distribution functions

Ando's surface roughness model is applied to metallic nanowires and extended beyond small roughness size and infinite barrier limit approximations for the wavefunction overlaps, such as the Prange-Nee approximation. Accurate and fast simulations can still be performed without invoking these overlap approximations by averaging over roughness profiles using finite domain distribution functions to obtain an analytic solution for the scattering rates. The simulations indicate that overlap approximations, while predicting a resistivity that agrees more or less with our novel approach, poorly estimate the underlying scattering rates. All methods show that a momentum gap between left- and right-moving electrons at the Fermi level, surpassing a critical momentum gap, gives rise to a substantial decrease in resistivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Electron relaxation times and resistivity in metallic nanowires due to tilted grain boundary planes

We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modeling and tackling resistivity scaling in metal nanowires

A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Modeling surface roughness scattering in metallic nanowires

Ando's model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribution functions on a finite domain with analytical expressions for the average surface roughness matrix elements. This approach is valid for any roughness size and extends beyond the commonly used Prange-Nee approximation. The resistivity scaling is obtained from the self-consistent relaxation time solution of the Boltzmann transport equation and is compared to Prange-Nee's approach and other known methods. The results show that a substantial drop in resistivity can be obtained for certain diameters by achieving a large momentum gap between Fermi level states with positive and negative momentum in the transport direction.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Resistivity scaling and electron relaxation times in metallic nanowires

We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxation time strongly depends on the sub-band state, something that remained unclear with the methods of previous work. The resistivity scaling is obtained for different roughness and grain-boundary properties, showing large differences in scaling behavior and relaxation times. Our model clearly indicates that the resistivity is dominated by grain-boundary scattering, easily surpassing the surface roughness contribution by a factor of 10.

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