BZPEERReading, trust and collaboration for researchDiscover
Workspaces
Network
Opportunities
Account
Researcher profile
Baoxing Xu contributes to research discovery and scholarly infrastructure.
Trust snapshot
Actions
Identity and collaboration
Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.
Log in to claimDirect collaboration
Claim this author entity first to unlock direct invitations.
Research graph
Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.
BZPEER is loading the nearby papers, people, topics and institutions for this page.
Published work
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe$_2$, in single atomic layer, bilayer, and trilayer forms.
We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser power and temperature, we calibrate lateral (in-plane) thermal conductivity of hBN and MoS2 and the vertical interfacial thermal conductance in the hBN/MoS2/hBN heterostructure as well as the interfaces between heterostructure and substrate. Crucially, we have found that interfacial thermal conductance between hBN and encapsulated MoS2 is 74MW/m2K and 72MW/m2K in supported and suspended films, respectively, which are significantly higher than interfacial thermal conductance between MoS2 and other substrates. Molecular dynamics (MD) computations conducted in parallel have shown consistent results. This work provides clear evidence of significantly efficient heat dissipation in hBN/MoS2/hBN heterostructures and sheds light on building novel hBN encapsulated nanoelectronics with efficient thermal management.