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Published work
Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe$_2$, in single atomic layer, bilayer, and trilayer forms.
The presence of wrinkles in Graphene Nanoribbons (GNR) and other two-dimensional (2D) materials significantly alter their mechanical, electronic, optical properties, which can be either beneficial or detrimental. Experimentally, it has been observed that during the commonly used growth process of GNR, water molecules, sourced from ambient humidity, can be diffused in between GNR and the substrate. The water diffusion causes wrinkle formation in GNR, which influences its properties. Furthermore, the diffused water eventually dries, creating the alteration not only in the geometry of Wrinkled Graphene Nanoribbons (WGNR) but also its features. Computational analysis of these phenomena can provide an atomistic-level understanding of the phenomena. Therefore, in this work, Molecular Dynamics (MD) simulations are performed to model the water diffusion and evaporation in between GNR and its substrate, and their effect on wrinkle formation and dynamics. Additionally, Density Functional Theory (DFT)-based analysis is used to characterize the difference in the electronic structure of WGNR caused by the change in wrinkle geometry. Our study reveals that the initially distributed wrinkles tend to coalesce to form a localized wrinkle whose configuration depends on the initial wrinkle geometry and the amount of diffused water. The wrinkle configuration changes upon drying, while it remains static until the complete drying. The movement of the localized wrinkle is the combination of three fundamental modes - bending, buckling, and sliding. The stress analysis reveals that the maximum stress is at the base of the wrinkle, and its magnitude is always below the plasticity limit. The DFT results provide insight into the potential of using the wrinkles to control the direction of electron flow for the applications in flexible electronics.
Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290K and 10K for exfoliated WSe2 on SiO2/Si, sapphire (Al2O3), hBN/Si3N4/Si, and MgF2, indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes' appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate.
In most envisioned applications, full utilization of a graphene-carbon nanotube (CNT) construct requires maintaining the integrity of the graphene layer during the CNT growth step. In this work, we exhibit an approach towards controlled CNT growth atop graphene substrates where the reaction equilibrium between source hydrocarbon decomposition and carbon saturation into and precipitation from the catalyst nanoparticles shifts towards CNT growth rather than graphene consumption. By utilizing C2H4 feedstock, we demonstrate that the low temperature growth permissible with this gas suppresses undesirable catalytic hydrogenation and dramatically reduces the etching of the graphene layer to exhibit graphene-CNT hybrids with continuous, undamaged structures.
We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs.
We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were found to be inconsistent with pure Farbry-Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant tunneling through quasi-bound impurity states. This observation may be understood as another signature of Klein tunneling in graphene heterojunctions and is of importance for future development and modeling of graphene based nanoelectronic devices.
Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization contrast reflects the fractional composition of armchair and zigzag edges, providing a monitor of edge purity, which is an important parameter for the development of efficient nanoelectronic devices.