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Very High Interfacial Thermal Conductance in Fully hBN-Encapsulated MoS2 van der Waals Heterostructure

We report experimental and computational studies of thermal transport properties in hexagonal boron nitride (hBN) encapsulated molybdenum disulfide (MoS2) structure using refined optothermal Raman techniques, and reveal very high interfacial thermal conductance between hBN and MoS2. By studying the Raman shift of hBN and MoS2 in suspended and substrate-supported thin films under varying laser power and temperature, we calibrate lateral (in-plane) thermal conductivity of hBN and MoS2 and the vertical interfacial thermal conductance in the hBN/MoS2/hBN heterostructure as well as the interfaces between heterostructure and substrate. Crucially, we have found that interfacial thermal conductance between hBN and encapsulated MoS2 is 74MW/m2K and 72MW/m2K in supported and suspended films, respectively, which are significantly higher than interfacial thermal conductance between MoS2 and other substrates. Molecular dynamics (MD) computations conducted in parallel have shown consistent results. This work provides clear evidence of significantly efficient heat dissipation in hBN/MoS2/hBN heterostructures and sheds light on building novel hBN encapsulated nanoelectronics with efficient thermal management.