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Researcher profile

Rik Dey

Rik Dey contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

7 published item(s)

preprint2020arXiv

Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films

Chromium selenide thin films were grown epitaxially on Al${_2}$O${_3}$(0001) and Si(111)-(7${\times}$7) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection high-energy electron diffraction and triangular structures in scanning tunneling microscopy indicate a flat smooth film growth along the c-axis, and is very similar to that from a hexagonal surface. X-ray diffraction pattern confirms the growth along the c-axis with c-axis lattice constant of 17.39 Å. The grown film is semiconducting, having a small band gap of about 0.034 eV, as calculated from the temperature dependent resistivity. Antiferromagnetic nature of the film with a Néel temperature of about 40 K is estimated from the magnetic exchange bias measurements. A larger out-of-plane exchange bias, along with a smaller in-plane exchange bias is observed below 40 K. Exchange bias training effects are analyzed based on different models and are observed to be following a modified power-law decay behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer $MoS_{2}$ by Amorphous $TiO_{x}$ Encapsulation

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dichalcogenides (TMDs), considerable effort has been put into exploring various doping techniques and dielectric engineering using $high-κ$ oxides, respectively. The goal of this work is to demonstrate a $high-κ$ dielectric that serves as an effective n-type charge transfer dopant on monolayer (ML) molybdenum disulfide ($MoS_{2}$). Utilizing amorphous titanium suboxide (ATO) as the '$high-κ$ dopant', we achieved a contact resistance of ~ $180$ $Ω.μm$ which is the lowest reported value for ML $MoS_{2}$. An ON current as high as $240$ $μA/μm$ and field effect mobility as high as $83$ $cm^2/V-s$ were realized using this doping technique. Moreover, intrinsic mobility as high as $102$ $cm^2/V-s$ at $300$ $K$ and $501$ $cm^2/V-s$ at $77$ $K$ were achieved after ATO encapsulation which are among the highest mobility values reported on ML $MoS_{2}$. We also analyzed the doping effect of ATO films on ML $MoS_{2}$, a phenomenon which is absent when stoichiometric $TiO_{2}$ is used, using ab initio density functional theory (DFT) calculations which shows excellent agreement with our experimental findings. Based on the interfacial-oxygen-vacancy mediated doping as seen in the case of $high-κ$ ATO - ML $MoS_{2}$, we propose a mechanism for the mobility enhancement effect observed in TMD-based devices after encapsulation in a $high-κ$ dielectric environment.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts

We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the magnetic alignment of the incorporated ferromagnetic Fe bar, at temperatures ranging from 100 K to room temperature. This magnetoresistance is associated with the relative orientation of the Fe bar magnetization and spin-polarization of electrons moving on the surface of the TI with helical spin-momentum locking. The magnitude of the observed magnetoresistance is relatively large compared to that observed in prior work.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on the top surface of Fe. When current is passed on the surface of Bi2Se3, the surface of the Bi2Se3 becomes spin polarized and strong exchange interaction occurs between the d electrons in the ferromagnet and the electrons conducting the current on the surface of the Bi2Se3. Part of the current is shunted through the ferromagnet which generates spin transfer torque in the ferromagnet. The combination of the spin transfer torque and exchange interaction torque along with voltage-controlled magnetic anisotropy (VCMA) allows ultralow-energy switching of the ferromagnet. We perform micromagnetic simulations and predict switching time of the order of 2.5 ns and switching energy of the order of 0.45fJ for a ferromagnetic bit with thermal stability of 43kBT. Such ultralow-energy and high-speed VCMA-induced switching of a perpendicular anisotropy ferromagnet on a topological insulator could be utilized for energy-efficient memory design.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating thereof for low-energy switching of nanomagnets for possible memory and nonvolatile logic applications. For specificity, we consider nanomagnets with perpendicular anisotropy on a three-dimensional topological insulator. We model the possibility and dynamics of RKKY-based switching of one nanomagnet by coupling to one or more nanomagnets of set orientation. Applications for both memory and nonvolatile logic are considered, with follower, inverter and majority gate functionality shown. Sub-attojoule switching energies, far below conventional spin transfer torque (STT)-based memories and even below CMOS logic appear possible. Switching times on the order of a few nanoseconds, comparable to times for STT switching, are estimated for ferromagnetic nanomagnets.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films

Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investigate the structure, morphology, magnetic and magneto-transport properties of (001)-oriented Cr$_2$Te$_3$ thin films grown on Al$_2$O$_3$(0001) and Si(111)-(7$\times$7) surfaces by molecular beam epitaxy (MBE). Streaky RHEED patterns indicate flat smooth film growth on both substrates. STM studies show the hexagonal arrangements of surface atoms. Determination of the lattice parameter from atomically resolved STM image is consistent with the bulk crystal structures. Magnetic measurements show the film is ferromagnetic having the Curie temperature of about 180 K, and a spin glass-like behavior was observed below 35 K. Magneto-transport measurements show the metallic nature of the film with a perpendicular magnetic anisotropy along the $c$-axis.

0 citations0 reviewsNo code linkedOpen access