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B. Kundys

B. Kundys appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.str-elcond-mat.otherphysics.app-phphysics.opticscond-mat.mes-hallcond-mat.supr-con

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Published work

17 published item(s)

preprint2024arXiv

Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure

Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$

Electric control of magnetic properties is an important challenge for modern magnetism and spintronic development. In particular, an ability to write magnetic state electrically would be highly beneficial. Among other methods, the use of electric field induced deformation of piezoelectric elements is a promising low-energy approach for magnetization control. We investigate the system of piezoelectric substrate Pb[Zr$_x$Ti$_{1-x}$]O$_3$ with CoFe overlayers, extending the known reversible bistable electro-magnetic coupling to surface and multistate operations, adding the initial state reset possibility. Increasing the CoFe thickness improves the magnetoresistive sensitivity, but at the expenses of decreasing the strain-mediated coupling, with optimum magnetic thin film thickness of the order of 100 nm. The simplest resistance strain gauge structure is realized and discussed as a multistate memory cell demonstrating both resistive memory (RRAM) and magnetoresistive memory (MRAM) functionalities in a single structure.

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preprint2016arXiv

Optical Writing of Magnetic Properties by Remanent Photostriction

We present an optically induced remanent photostriction in BiFeO3, resulting from the photovoltaic effect, which is used to modify the ferromagnetism of Ni film in a hybrid BiFeO3/Ni structure. The 75% change in coercivity in the Ni film is achieved via optical and nonvolatile control. This photoferromagnetic effect can be reversed by static or ac electric depolarization of BiFeO3. Hence, the strain dependent changes in magnetic properties are written optically, and erased electrically. Light-mediated straintronics is therefore a possible approach for low-power multistate control of magnetic elements relevant for memory and spintronic applications.

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preprint2016arXiv

Room temperature polarization in the ferrimagnetic Ga2-xFexO3 ceramics

The effect of the Fe-Ga ratio on the magnetic and electric properties of the multiferroic Ga2-xFexO3 compound has been studied in order to determine the composition range exhibiting magnetic and electric orders coexistence and their critical temperatures. A magnetoelectric phase diagram, showing the evolution of both the Neel magnetic ordering temperature and the electric ordering temperature, versus the iron content has been established for x values between 0.9 and 1.4. While the ferrimagnetic Neel temperature increases with the iron content, the electric ordering temperature shows an opposite trend. The electric polarization has been found to exist far above room temperature for the x value of 1.1 composition which shows the highest observed electric ordering temperature of approx. 580K. The compounds with x values of 1.3 and 1.4 are ferrimagnetic-electric relaxors with both properties coexisting at room temperature.

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preprint2015arXiv

Multi-state and non-volatile control of graphene conductivity with surface electric fields

Planar electrodes patterned on a ferroelectric substrate are shown to provide lateral control of the conductive state of a two-terminal graphene stripe. A multi-level and on-demand memory control of the graphene resistance state is demonstrated under low sub-coercive electric fields, with a susceptibility exceeding by more than two orders of magnitude those reported in a vertical gating geometry. Our example of reversible and low-power lateral control over 11 memory states in the graphene conductivity illustrates the possibility of multimemory and multifunctional applications, as top and bottom inputs remain accessible.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Photostrictive materials

Light-matter interactions that lead to nonthermal changes in size of the sample constitute a photostrictive effect in many compounds. The photostriction phenomenon was observed in four main groups of materials, ferroelectrics, polar, and non-polar semiconductors, as well as in organic-based materials that are reviewed here. The key mechanisms of photostriction and its dependence on several parameters and perturbations are assessed. The major literature of the photostriction is surveyed, and the review ends with a summary of the proposed technical applications.

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preprint2014arXiv

Multistate nonvolatile straintronics controlled by a lateral electric field

We present a multifunctional and multistate permanent memory device based on lateral electric field control of a strained surface. Sub-coercive electrical writing of a remnant strain of a PZT substrate imprints stable and rewritable resistance changes on a CoFe overlayer. A proof-of-principle device, with the simplest resistance strain gage design, is shown as a memory cell exhibiting 17-memory states of high reproducibility and reliability for nonvolatile operations. Magnetoresistance of the film also depends on the cell state, and indicates a rewritable change of magnetic properties persisting in the remnant strain of the substrate. This makes it possible to combine strain, magnetic and resistive functionalities in a single memory element, and suggests that sub-coercive stress studies are of interest for straintronics applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Subcoercive and multilevel ferroelastic remnant states with resistive readout

Ferroelectric devices use their electric polarization ferroic order as the switching and storage physical quantity for memory applications. However, additional built-in physical quantities and memory paradigms are requested for applications. We propose here to take advantage of the multiferroic properties of ferroelectrics, using ferroelasticity to create a remnant strain, persisting after stressing the material by converse piezoelectricity means. While large electric fields are needed to switch the polarization, here writing occurs at subcoercive much lower field values, which can efficiently imprint multiple remnant strain states. A proof-of-principle device, with the simplest and non-optimized resistance strain detection design, is shown here to exhibit 13-memory states of high reproducibility and reliability. The related advantages in lower power consumption and limited device fatigue make our approach relevant for applications.

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preprint2012arXiv

Light controlled magnetoresistance and magnetic field controlled photoresistance in CoFe film deposited on BiFeO3

We present a magnetoresistive-photoresistive device based on the interaction of a piezomagnetic CoFe thin film with a photostrictive BiFeO3 substrate that undergoes light-induced strain. The magnitude of the resistance and magnetoresistance in the CoFe film can be controlled by the wavelength of the incident light on the BiFeO3. Moreover, a light-induced decrease in anisotropic magnetoresistance is detected due to an additional magnetoelastic contribution to magnetic anisotropy of the CoFe film. This effect may find applications in photo-sensing systems, wavelength detectors and can possibly open a research development in light-controlled magnetic switching properties for next generation magnetoresistive memory devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photostriction in BiFeO3: wavelength dependence

In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert electric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can depend on wavelength.We report here on mechanical deformation of BiFeO3 and its response time to discrete wavelengths of incident light ranging from 365 to 940 nm. The mechanical response of BiFeO3 is found to have two maxima in near-UV and green spectral wavelength regions.

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preprint2010arXiv

Light-induced size changes in BiFeO3 crystals

Multifunctional oxides are promising materials because of their fundamental physical properties as well as their potential in applications1. Among these materials, multiferroics exhibiting ferroelectricity and magnetism are good candidates for spin electronic applications using the magnetoelectric effect, which couples magnetism and ferroelecticity. Furthermore, because ferroelectrics are insulators with a reasonable bandgap, photons can efficiently interact with electrons leading to photoconduction or photovoltaic effects. However, until now, coupling of light with mechanical degrees of freedom has been elusive, although ferroelasticity is a well-known property of these materials. Here, we report on the observation, for the first time, of a substantial visiblelight- induced change in the dimensions of BiFeO3 crystals at room temperature. The relative light-induced photostrictive effect is of the order of 10e-5 with response times below 0.1s. It depends on the polarization of incident light as well as applied magnetic fields. This opens the perspective of combining mechanical, magnetic, electric and optical functionalities in future generations of remote switchable devices.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Multiferroicity and hydrogen-bond ordering in (C2H5NH3)2CuCl4 featuring dominant ferromagnetic interactions

We demonstrate that ethylammonium copper chloride, (C2H5NH3)2CuCl4, a member of the hybrid perovskite family is an electrically polar and magnetic compound with dielectric anomaly around the Curie point (247 K). We have found large spontaneous electric polarization below this point accompanied with a color change in the sample. The system is also ferroelectric, with large remnant polarization (37μC/cm2) that is comparable to classical ferroelectric compounds. The results are ascribed to hydrogen-bond ordering of the organic chains. The coexistence of ferroelectricity and dominant ferromagnetic interactions allows to relate the sample to a rare group of magnetic multiferroic compounds. In such hybrid perovskites the underlying hydrogen bonding of easily tunable organic building blocks in combination with the 3d transition-metal layers offers an emerging pathway to engineer multifuctional multiferroics.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Polar properties of Eu0.6Y0.4MnO3 ceramics and their magnetic field dependence

Eu1-xYxMnO3 exhibits, unlike other magnetoelectric systems, very distinctive features. Its magnetoelectric properties is driven by the magnetic spin of the Mn3+ ion, but they can be drastically changed by varying the content of Y3+, which it does not carry any magnetic moment. Though the x = 0.40 composition has been studied extensively, some basic questions still remain to be thoroughly understood. Thus, this work is aimed at studying some of its polar properties and their magnetic field dependence as well. The experimental results here reported have shown that this material is very easily polarisable under external electric fields, and so, whenever the polarization is obtained from time integration of the displacement currents, an induced polarization is superposed to the spontaneous one, eventually masking the occurrence of ferroelectricity. We have found clear evidence for the influence of a magnetic field in the polar properties of Eu0.6Y0.4MnO3. The study of electric polarization of Eu0.6Y0.4MnO3 under an external magnetic field yields a value with the same order of magnitude of the remanent polarization determined from polarization reversal experiments. The comparison of the magnetic induced changes on the polarization obtained in polycrystalline samples and single crystals confirms the threshold magnetic field value for the polarization rotation from the a- to the c-direction, and evidencing the importance of the granular nature of the samples in the polar response to magnetic field.

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preprint2009arXiv

Three terminal capacitance technique for magnetostriction and thermal expansion measurements

An instrument has been constructed to measure a large range of magnetostriction and thermal expansion between room temperature and 4 K in a superconductive split-coil magnet, that allows investigation in magnetic fields up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big ones (up to 13 mm) of the irregular form can be measured. The possibility of magnetostriction investigation in thin films is shown. A general account is given of both electrical and the mechanical aspects of the design of capacitance cell and their associated electronic circuitry. A simple lever device is proposed to increase the sensitivity twice. The resulting obtained sensitivity can be 0.5 Angstrom. The performance of the technique is illustrated by some preliminary measurements of the magnetostriction of superconducting MgB2, thermal expansion of (La0.8Ba0.2)0.93MnO3 single crystal and magnetoelastic behavior of the Ni/Si(111) and La0.7Sr0.3CoO3/SAT0.7CAT0.1LA0.2(001) cantilevers.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Multiferroicity and spiral magnetism in FeVO$_4$ with quenched Fe orbital moments

FeVO$_4$ has been studied by heat capacity, magnetic susceptibility, electric polarization and single crystal neutron diffraction experiments. The triclinic crystal structure is made of \emph{S}-shaped clusters of six Fe$^{3+}$ ions, linked by VO$_4^{3-}$ groups. Two long-range magnetic ordering transitions occur at T$_{N1}$=22K and T$_{N2}$=15K. Both magnetic structures are incommensurate. That stable below T$_{N1}$ is collinear with amplitude modulated moments whereas below T$_{N2}$ the arrangement is non-collinear with a helicoidal modulation. Below T$_{N2}$, \fevo becomes weakly ferroelectric coincidentally with the loss of the collinearity of the magnetic structure. We conclude that \fevo provides another example of frustrated spiral magnet similar to the classical TbMnO$_3$ compound. However, \fevo has quenched orbital moments and a particular structure clarifying the respective role of anisotropy and magnetic frustration in this type of multiferroic materials.

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