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Researcher profile

B. Doudin

B. Doudin contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciphysics.app-phphysics.opticscond-mat.othercond-mat.str-el

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Published work

4 published item(s)

preprint2024arXiv

Single wavelength operating neuromorphic device based on a graphene-ferroelectric transistor

As global data generation continues to rise, there is an increasing demand for revolutionary in-memory computing methodologies and efficient machine learning solutions. Despite recent progress in electrical and electro-optical simulations of machine learning devices, the all-optical nonthermal function remains challenging, with single wavelength operation still elusive. Here we report on an optical and monochromatic way of neuromorphic signal processing for brain-inspired functions, eliminating the need for electrical pulses. Multilevel synaptic potentiation-depression cycles are successfully achieved optically by leveraging photovoltaic charge generation and polarization within the photoferroelectric substrate interfaced with the graphene sensor. Furthermore, the demonstrated low-power prototype device is able to reproduce exact signal profile of brain tissues yet with more than two orders of magnitude faster response. The reported properties should trigger all-optical and low power artificial neuromorphic development based on photoferroelectric structures.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Photovoltaic-ferroelectric materials for the realization of all-optical devices

Following how the electrical transistor revolutionized the field of electronics,the realization of an optical transistor in which the flow of light is controlled optically should open the long-sought era of optical computing and new data processing possibilities. However, such function requires photons to influence each other, an effect which is unnatural in free space. Here it is shown that a ferroelectric and photovoltaic crystal gated optically at the onset of its bandgap energy can act as a photonic transistor. The light-induced charge generation and distribution processes alter the internal electric field and therefore impact the optical transmission with a memory effect and pronounced nonlinearity. The latter results in an optical computing possibility, which does not need to operate coherently. These findings advance efficient room temperature optical transistors, memristors, modulators and all-optical logic circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Optically rewritable memory in a graphene/ferroelectric-photovoltaic heterostructure

Achieving optical operation of logic elements, especially those that involve 2D layers, can open the long sought era of optical computing. However, the efficient optical modulation of the electronic properties of 2D materials including memory effect is currently missing. Here we report a fully optical control of the conductivity of a graphene with write/erase option yet under ultralow optical fluence. The competition between light-induced charge generation in ferroelectric-photovoltaic substrate with subsequent relaxation processes provides the selective photocarrier trapping control affecting the doping of 2D overlayer. These findings open the road to photonic control of 2D devices for all -optical modulators and a variety of all-optical logic circuits, memories and field-effect transistors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Photostriction in BiFeO3: wavelength dependence

In electrically polar solids optomechanical effects result from the combination of two main processes, electric field-induced strain and photon-induced voltages. Whereas the former depends on the electrostrictive ability of the sample to convert electric energy into mechanical energy, the latter is caused by the capacity of photons with appropriate energy to generate charges and, therefore, can depend on wavelength.We report here on mechanical deformation of BiFeO3 and its response time to discrete wavelengths of incident light ranging from 365 to 940 nm. The mechanical response of BiFeO3 is found to have two maxima in near-UV and green spectral wavelength regions.

0 citations0 reviewsNo code linkedOpen access