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A. Veligura

A. Veligura appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.otherquant-ph

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Published work

10 published item(s)

preprint2013arXiv

Fine structure of the lowest Landau level in suspended trilayer graphene

Magneto-transport experiments on ABC-stacked suspended trilayer graphene reveal a complete splitting of the twelve-fold degenerated lowest Landau level, and, in particular, the opening of an exchange-driven gap at the charge neutrality point. A quantitative analysis of distinctness of the quantum Hall plateaus as a function of field yields a hierarchy of the filling factors: ν=6, 4, and 0 are the most pronounced, followed by ν=3, and finally ν=1, 2 and 5. Apart from the appearance of a ν=4 state, which is probably caused by a layer asymmetry, this sequence is in agreement with Hund's rules for ABC-stacked trilayer graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Field induced quantum-Hall ferromagnetism in suspended bilayer graphene

We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance. For higher fields the eight-fold degenerated lowest Landau level lifts completely. Both the sequence of this symmetry breaking and the strong transition of the gap-size point to a ferromagnetic nature of the insulating phase developing at the charge neutrality point.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Quantum Hall transport as a probe of capacitance profile at graphene edges

The quantum Hall effect is a remarkable manifestation of quantized transport in a two-dimensional electron gas. Given its technological relevance, it is important to understand its development in realistic nanoscale devices. In this work we present how the appearance of different edge channels in a field-effect device is influenced by the inhomogeneous capacitance profile existing near the sample edges, a condition of particular relevance for graphene. We apply this practical idea to experiments on high quality graphene, demonstrating the potential of quantum Hall transport as a spatially resolved probe of density profiles near the edge of this two-dimensional electron gas.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin transport in high quality suspended graphene devices

We measure spin transport in high mobility suspended graphene (μ~ 10^5 cm^2/Vs), obtaining a (spin) diffusion coefficient of 0.1 m^2/s and giving a lower bound on the spin relaxation time (τ_s ~ 150 ps) and spin relaxation length (λ_s=4.7 μm) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transport Gap in Suspended Bilayer Graphene at Zero Magnetic Field

We report a change of three orders of magnitudes in the resistance of a suspended bilayer graphene flake which varies from a few k$Ω$s in the high carrier density regime to several M$Ω$s around the charge neutrality point (CNP). The corresponding transport gap is 8 meV at 0.3 K. The sequence of appearing quantum Hall plateaus at filling factor $ν=2$ followed by $ν=1$ suggests that the observed gap is caused by the symmetry breaking of the lowest Landau level. Investigation of the gap in a tilted magnetic field indicates that the resistance at the CNP shows a weak linear decrease for increasing total magnetic field. Those observations are in agreement with a spontaneous valley splitting at zero magnetic field followed by splitting of the spins originating from different valleys with increasing magnetic field. Both, the transport gap and $B$ field response point toward spin polarized layer antiferromagnetic state as a ground state in the bilayer graphene sample. The observed non-trivial dependence of the gap value on the normal component of $B$ suggests possible exchange mechanisms in the system.

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preprint2011arXiv

Coexistence of electron and hole transport in graphene

When sweeping the carrier concentration in monolayer graphene through the charge neutrality point, the experimentally measured Hall resistivity shows a smooth zero crossing. Using a two- component model of coexisting electrons and holes around the charge neutrality point, we unambiguously show that both types of carriers are simultaneously present. For high magnetic fields up to 30 T the electron and hole concentrations at the charge neutrality point increase with the degeneracy of the zero-energy Landau level which implies a quantum Hall metal state at ν=0 made up by both electrons and holes.

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preprint2011arXiv

Spin splitting in graphene studied by means of tilted magnetic-field experiments

We have measured the spin splitting in single-layer and bilayer graphene by means of tilted magnetic field experiments. Applying the Lifshitz-Kosevich formula for the spin-induced decrease of the Shubnikov de Haas amplitudes with increasing tilt angle we directly determine the product between the carrier cyclotron mass m* and the effective g-factor g* as a function of the charge carrier concentration. Using the cyclotron mass for a single-layer and a bilayer graphene we find an enhanced g-factor g* = 2.7 \pm 0.2 for both systems.

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preprint2010arXiv

Large yield production of high mobility freely suspended graphene electronic devices on a PMGI based organic polymer

The recent observation of fractional quantum Hall effect in high mobility suspended graphene devices introduced a new direction in graphene physics, the field of electron-electron interaction dynamics. However, the technique used currently for the fabrication of such high mobility devices has several drawbacks. The most important is that the contact materials available for electronic devices are limited to only a few metals (Au, Pd, Pt, Cr and Nb) since only those are not attacked by the reactive acid (BHF) etching fabrication step. Here we show a new technique which leads to mechanically stable suspended high mobility graphene devices which is compatible with almost any type of contact material. The graphene devices prepared on a polydimethylglutarimide based organic resist show mobilities as high as 600.000 cm^2/Vs at an electron carrier density n = 5.0 10^9 cm^-2 at 77K. This technique paves the way towards complex suspended graphene based spintronic, superconducting and other types of devices.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electronic spin transport in graphene field effect transistors

Spin transport experiments in graphene, a single layer of carbon atoms, indicate spin relaxation times that are significantly shorter than the theoretical predictions. We investigate experimentally whether these short spin relaxation times are due to extrinsic factors, such as spin relaxation caused by low impedance contacts, enhanced spin flip processes at the device edges or the presence of an aluminium oxide layer on top of graphene in some samples. Lateral spin valve devices using a field effect transistor geometry allowed for the investigation of the spin relaxation as a function of the charge density, going continuously from metallic hole to electron conduction (charge densities of $n\sim 10^{12}$cm$^{-2}$) via the Dirac charge neutrality point ($n \sim 0$). The results are quantitatively described by a one dimensional spin diffusion model where the spin relaxation via the contacts is taken into account. Spin valve experiments for various injector/detector separations and spin precession experiments reveal that the longitudinal (T$_1$) and the transversal (T$_2$) relaxation times are similar. The anisotropy of the spin relaxation times $τ_\parallel$ and $τ_\perp$, when the spins are injected parallel or perpendicular to the graphene plane, indicates that the effective spin orbit fields do not lie exclusively in the two dimensional graphene plane. Furthermore, the proportionality between the spin relaxation time and the momentum relaxation time indicates that the spin relaxation mechanism is of the Elliott-Yafet type. For carrier mobilities of 2-5$\times 10^3$ cm$2^$/Vs and for graphene flakes of 0.1-2 $μ$m in width, we found spin relaxation times of the order of 50-200 ps, times which appear not to be determined by the extrinsic factors mentioned above.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Anisotropic spin relaxation in graphene

Spin relaxation in graphene is investigated in electrical graphene spin valve devices in the non-local geometry. Ferromagnetic electrodes with in-plane magnetizations inject spins parallel to the graphene layer. They are subject to Hanle spin precession under a magnetic field $B$ applied perpendicular to the graphene layer. Fields above 1.5 T force the magnetization direction of the ferromagnetic contacts to align to the field, allowing injection of spins perpendicular to the graphene plane. A comparison of the spin signals at B = 0 and B = 2 T shows a 20 % decrease in spin relaxation time for spins perpendicular to the graphene layer compared to spins parallel to the layer. We analyze the results in terms of the different strengths of the spin orbit effective fields in the in-plane and out-of-plane directions.

0 citations0 reviewsNo code linkedOpen access