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Awadhesh Narayan

Awadhesh Narayan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-concond-mat.dis-nnphysics.opticsquant-ph

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Published work

29 published item(s)

preprint2026arXiv

Hexagonal Warping Control of Exceptional Points in Topological Insulator--Ferromagnetic Heterojunctions

Exceptional points (EPs) are non-Hermitian degeneracies, where both eigenvalues and eigenvectors coalesce, which are fundamentally distinct from their Hermitian counterparts. In this study, we investigate the influence of hexagonal warping on EPs emerging at the interfaces between topological insulators and ferromagnets. We demonstrate that the presence of the warping term plays a crucial role in determining the locations of the EPs. Furthermore, we show that the number as well as the positions of EPs emerging at such junctions can be tuned by an applied magnetic field. Our results establish a realistic and experimentally accessible platform for exploring non-Hermitian physics in topological insulator-ferromagnet junctions.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

Modulation-Doping a Correlated Electron Insulator

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change. External control of MIT in VO2 - especially without inducing structural changes - has been a long-standing challenge. In this work, we design and synthesize modulation-doped VO2-based thin film heterostructures that closely emulate a textbook example of filling control in a correlated electron insulator. Using a combination of charge transport, hard x-ray photoelectron spectroscopy, and structural characterization, we show that the insulating state can be doped to achieve carrier densities greater than 5x10^21 cm^(-3) without inducing any measurable structural changes. We find that the MIT temperature (T_MIT) continuously decreases with increasing carrier concentration. Remarkably, the insulating state is robust even at doping concentrations as high as ~0.2 e-/vanadium. Finally, our work reveals modulation-doping as a viable method for electronic control of phase transitions in correlated electron oxides with the potential for use in future devices based on electric-field controlled phase transitions.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Chiral metals and entrapped insulators in a one-dimensional topological non-Hermitian system

In this work we study many-body 'steady states' that arise in the non-Hermitian generalisation of the non-interacting Su-Schrieffer-Heeger model at a finite density of fermions. We find that the hitherto known phase diagrams for this system, derived from the single-particle gap closings, in fact correspond to distinct non-equilibrium phases, which either carry finite currents or are dynamical insulators where particles are entrapped. Each of these have distinct quasi-particle excitations and steady state correlations and entanglement properties. Looking at finite-sized systems, we further modulate the boundary to uncover the topological features in such steady states -- in particular the emergence of leaky boundary modes. Using a variety of analytical and numerical methods we develop a theoretical understanding of the various phases and their transitions, and uncover the rich interplay of non-equilibrium many-body physics, quantum entanglement and topology in a simple looking, yet a rich model system.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Interplay of Disorder and Point-Gap Topology: Chiral Modes, Localization and Non-Hermitian Anderson Skin Effect in One Dimension

Symmetry-protected spectral topology in non-Hermitian systems has interesting manifestations such as dynamically anomalous chiral currents and skin effect. We study the interplay between symmetries and disorder in a paradigmatic model for spectral topology - the non-reciprocal Su-Schrieffer-Heeger model. We numerically study the effect of disorder in on-site and non-reciprocal hopping terms. Using a real-space winding number, we investigate the impact of disorder on the spectral topology and the anomalous chiral modes under periodic boundary conditions. We discover a remarkable robustness of chiral current under disorder. The value of the chiral current retains the clean system value, is independent of disorder strength and is tracked completely by the real-space winding number for class A which has no symmetries, and class AIII, which has a sub-lattice symmetry. In class $D^\dagger$, which has $PT$-symmetric on-site gain and loss terms, we find that the disorder-averaged current is not robust while the winding number is robust. We study the localization physics using the inverse participation ratio and local density of states. As the disorder strength is increased, a mobility-edge phase with a finite winding appears. The abrupt vanishing of the winding number marks a transition from a partially localized to a fully localized phase. Under open boundary conditions, we observe a series of transitions through skin effect-partial skin effect-no skin effect phases. Further, we study the non-Hermitian Anderson skin effect (NHASE) for different symmetry classes, where the system without skin effect develops a disorder-driven skin effect at intermediate disorder values. Remarkably while NHASE is present for different classes, the real-space winding number shows a direct correspondence with it only when all symmetries are broken.

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preprint2022arXiv

Pressure-induced magnetic and topological transitions in non-centrosymmetric MnIn$_{2}$Te$_{4}$

The discovery of time-reversal-invariant topological states has drawn great attention in recent decades. However, despite the potential of displaying a variety of exotic physics, the study of magnetic topological phases lags behind due to underlying added complexity of magnetism. In this work, we predict the interplay of magnetism and topology in the non-centrosymmetric ternary manganese compound MnIn$_2$Te$_4$, using first-principles calculations. At ambient pressure, the ground state of the system is an antiferromagnetic insulator. With the application of small hydrostatic pressure ($\sim$0.50 GPa), it undergoes a magnetic transition and the ferromagnetic state becomes energetically favourable. At $\sim$2.92 GPa, the system undergoes a transition into a Weyl semimetallic phase, which hosts multiple Weyl points in the bulk and is associated with non-trivial surface Fermi arcs. Remarkably, we discover that the number of Weyl points in this system can be controlled by pressure and that these manifest in an anomalous Hall conductivity (AHC). In addition to proposing a new candidate magnetic topological material, our work demonstrates that pressure can be an effective way to induce and control topological phases, as well as AHC, in magnetic materials. These properties may allow our proposed material to be used as a novel pressure-controlled Hall switch.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Floquet Engineering of Multifold Fermions

Using Floquet theory, we investigate the effect of light on triple fold fermions. We study a low energy model as well as a simplified tight binding model under illumination. We find that the three fold degeneracy remains symmetry protected even after applying light if the original band structure is rotationally symmetric around the degeneracy. Otherwise, light can lift the degeneracy and open up a gap. We further investigate the effect of light on the topological Fermi arcs by means of numerical computations. The changes caused by illumination are reflected in experimentally detectable signatures, such as the anomalous Hall conductivity, which we calculate.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Machine learning non-Hermitian topological phases

Non-Hermitian topological phases have gained widespread interest due to their unconventional properties, which have no Hermitian counterparts. In this work, we propose to use machine learning to identify and predict non-Hermitian topological phases, based on their winding number. We consider two examples -- non-Hermitian Su-Schrieffer-Heeger model and its generalized version in one dimension and non-Hermitian nodal line semimetal in three dimensions -- to demonstrate the use of neural networks to accurately characterize the topological phases. We show that for the one dimensional model, a fully connected neural network gives an accuracy greater than 99.9\%, and is robust to the introduction of disorder. For the three dimensional model, we find that a convolutional neural network accurately predicts the different topological phases.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Edge superconductivity in Multilayer WTe2 Josephson junction

WTe2, as a type-II Weyl semimetal, has 2D Fermi arcs on the (001) surface in the bulk and 1D helical edge states in its monolayer. These features have recently attracted wide attention in condensed matter physics. However, in the intermediate regime between the bulk and monolayer, the edge states have not been resolved owing to its closed band gap which makes the bulk states dominant. Here, we report the signatures of the edge superconductivity by superconducting quantum interference measurements in multilayer WTe2 Josephson junctions and we directly map the localized supercurrent. In thick WTe2 (~60 nm), the supercurrent is uniformly distributed by bulk states with symmetric Josephson effect ($\left|I_c^+(B)\right|=\left|I_c^-(B)\right|$). In thin WTe2 (10 nm), however, the supercurrent becomes confined to the edge and its width reaches up to 1.4 um and exhibits non-symmetric behavior $\left|I_c^+(B)\right|\neq \left|I_c^-(B)\right|$. The ability to tune the edge domination by changing thickness and the edge superconductivity establishes WTe2 as a promising topological system with exotic quantum phases and a rich physics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Effect of strain and doping on the polar metal phase in LiOsO$_3$

We systematically investigate the effect of strain and doping on the polar metal phase in lithium osmate, LiOsO$_3$, using first-principles calculations. We demonstrate that the polar metal phase in LiOsO$_3$ can be controlled by biaxial strain. Based on density functional calculations, we show that a compressive biaxial strain enhances the stability of the polar $R3c$ phase. On the other hand, a tensile biaxial strain favors the centrosymmetric $R\overline{3}c$ structure. Thus, strain emerges as a promising control parameter over polar metallicity in this material. We uncover a strain-driven quantum phase transition under tensile strain, and highlight intriguing properties that could emerge in the vicinity of this polar to non-polar metal transition. We examine the effect of charge doping on the polar metal phase. By means of electrostatic doping as well as supercell calculations, we find that screening from additional charge carriers, expected to suppress the polar distortions, have only a small effect on them. Rather remarkably, and in contrast to conventional ferroelectrics, the polar metal phase in LiOsO$_3$ remains robust against charge doping up to large doping values.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Giant orbital polarization of Ni$^{2+}$ in square planar environment

Understanding the electronic behavior of Ni$^{2+}$ in a square planar environment of oxygen is the key to unravel the origin of the recently discovered superconductivity in the hole doped nickelate Nd$_{0.8}$Sr$_{0.2}$NiO$_2$. To identify the major similarities/dissimilarities between nickelate and cuprate superconductivity, the study of the electronic structure of Ni$^{2+}$ and Cu$^{2+}$ in an identical square planar environment is essential. In order to address these questions, we investigate the electronic structure of Sr$_2$CuO$_3$ and Ni doped Sr$_2$CuO$_3$ single crystals containing (Cu/Ni)O$_4$ square planar units. Our polarization dependent X-ray absorption spectroscopy experiments for Ni in Sr$_2$Cu$_{0.9}$Ni$_{0.1}$O$_3$ have revealed very large orbital polarization, which is a characteristic feature of high $T_c$ cuprate. This arises due to the low spin $S$=0 configuration with two holes in Ni 3$d_{x^2-y^2}$ orbitals - in contrast to the expected high spin $S$=1 state from Hund's first rule. The presence of such $S$=0 Ni$^{2+}$ in hole doped nickelate would be analogous to the Zhang Rice singlet. However, the Mott Hubbard insulating nature of the NiO$_4$ unit would point towards a different electronic phase space of nickelates, compared to high $T_c$ cuprates.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electronic Structure Studies of FeSi: A Chiral Topological System

Most recent observation of topological Fermi arcs on the surface of manyfold degenerate B20 systems, CoSi and RhSi, have attracted enormous research interests. Although an another isostructural system, FeSi, has been predicted to show bulk chiral fermions, it is yet to be clear theoretically and as well experimentally that whether FeSi possesses the topological surface Fermi arcs associated with the exotic chiral fermions in vicinity of the Fermi level. In this contribution, using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT), we present the low-energy electronic structure of FeSi. We further report the surface state calculations to provide insights into the surface band structure of FeSi near the Fermi level. Unlike in CoSi or RhSi, FeSi has no topological Fermi arcs near the Fermi level as confirmed both from ARPES and surface state calculations. Further, the ARPES data show spin-orbit coupling (SOC) band splitting of 40 meV, which is in good agreement with bulk band structure calculations. We noticed an anomalous temperature dependent resistivity in FeSi which can be understood through the electron-phonon interactions as we find a Debye energy of 80 meV from the ARPES data.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Class of Rashba ferroelectrics in hexagonal semiconductors

We present a class of Rashba systems in hexagonal semiconducting compounds, where an electrical control over spin-orbital texture is provided by their bulk ferroelectricity. Our first-principles calculations reveal a number of such materials with large Rashba coefficients. We, furthermore, show that strain can drive a topological phase transition in such materials, resulting in a ferroelectric topological insulating state. Our findings can open avenues for interplay between Rashba effect, ferroelectricity and topological phenomena.

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preprint2016arXiv

Computational and experimental investigation of unreported transition metal selenides and sulphides

Expanding the library of known inorganic materials with functional electronic or magnetic behavior is a longstanding goal in condensed matter physics and materials science. Recently, the transition metal chalchogenides including selenium and sulfur have been of interest because of their correlated-electron properties, as seen in the iron based superconductors and the transition metal dichalcogenides. However, the chalcogenide chemical space is less explored than that of oxides, and there is an open question of whether there may be new materials heretofore undiscovered. We perform a systematic combined theoretical and experimental search over ternary phase diagrams that are empty in the Inorganic Crystal Structure Database containing cations, transition metals, and one of selenium or sulfur. In these 27 ternary systems, we use a probabilistic model to reduce the likelihood of false negative predictions, which results in a list of 24 candidate materials. We then conduct a variety of synthesis experiments to check the candidate materials for stability. While the prediction method did obtain previously unknown compositions that are predicted stable within density functional theory, none of the candidate materials formed in our experiments. We come to the conclusion that these phase diagrams are "empty" in the case of bulk synthesis, but it remains a possibility that alternate synthesis routes may produce some of these phases.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of quasi-two-dimensional Dirac fermions in ZrTe5

Since the discovery of graphene, layered materials have attracted extensive interests owing to their unique electronic and optical characteristics. Among them, Dirac semimetal, one of the most appealing categories, has been a long-sought objective in layered systems beyond graphene. Recently, layered pentatelluride ZrTe5 was found to host signatures of Dirac semimetal. However, the low Fermi level in ZrTe5 strongly hinders a comprehensive understanding of the whole picture of electronic states through photoemission measurements, especially in the conduction band. Here, we report the observation of Dirac fermions in ZrTe5 through magneto-optics and magneto-transport. By applying magnetic field, we observe a square-root-B dependence of inter-Landau-level resonance and Shubnikov-de Haas (SdH) oscillations with non-trivial Berry phase, both of which are hallmarks of Dirac fermions. The angular-dependent SdH oscillations show a clear quasi-two-dimensional feature with highly anisotropic Fermi surface and band topology, in stark contrast to the 3D Dirac semimetal such as Cd3As2. This is further confirmed by the angle-dependent Berry phase measurements and the observation of bulk quantum Hall plateaus. The unique band dispersion is theoretically understood: the system is at the critical point between a 3D Dirac semimetal and a topological insulator phase. With the confined interlayer dispersion and reducible dimensionality, our work establishes ZrTe5 as an ideal platform for exploring exotic physical phenomena of Dirac fermions.

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preprint2016arXiv

Tunable point nodes from line node semimetals via application of light

We propose that illumination with light provides a useful platform for creating tunable semimetals. We show that by shining light on semimetals with a line degeneracy, one can convert them to a point node semimetal. These point nodes are adjustable and their position can be controlled by simply rotating the incident light beam. We also discuss the implications of this change in Fermi surface topology, as manifested in transport observables.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Floquet dynamics in two-dimensional semi-Dirac semimetals and three-dimensional Dirac semimetals

We study the photoresponse of two-dimensional semi-Dirac semimetals and three-dimensional Dirac semimetals to off-resonant circularly polarized light. For two-dimensional semi-Dirac semimetals we find that incident light does not open a gap in the spectrum, in contrast to the case of purely linear dispersion. For the three-dimensional case we find that applying a circularly polarized light, one can tune from a trivial insulator to three-dimensional Dirac semimetal with an inverted gap. We propose and show that application of light leads to an intriguing platform for generation, motion and merging of three-dimensional Dirac points.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Gate-tunable quantum oscillations in ambipolar Cd3As2 thin films

Electrostatic doping in materials can lead to various exciting electronic properties, such as metal-insulator transition and superconductivity, by altering the Fermi level position or introducing exotic phases. Cd3As2, a three-dimensional (3D) analog of graphene with extraordinary carrier mobility, was predicted to be a 3D Dirac semimetal, a feature confirmed by recent experiments. However, most research so far has been focused on metallic bulk materials that are known to possess ultra-high mobility and giant magnetoresistance but limited carrier transport tunability. Here, we report on the first observation of a gate-induced transition from band conduction to hopping conduction in single-crystalline Cd3As2 thin films via electrostatic doping by solid electrolyte gating. The extreme charge doping enables the unexpected observation of p-type conductivity in a 50 nm-thick Cd3As2 thin film grown by molecular beam epitaxy. More importantly, the gate-tunable Shubnikov-de Haas (SdH) oscillations and the temperature-dependent resistance reveal a unique band structure and bandgap opening when the dimensionality of Cd3As2 is reduced. This is also confirmed by our first-principles calculations. The present results offer new insights towards nanoelectronic and optoelectronic applications of Dirac semimetals in general, and provide new routes in the search for the intriguing quantum spin Hall effect in low-dimension Dirac semimetals, an effect that is theoretically predicted but not yet experimentally realized.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Single atom anisotropic magnetoresistance on a topological insulator surface

We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi$_2$Se$_3$ elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-valve Effect in NiFe/MoS2/NiFe Junctions

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have been recently proposed as appealing candidate materials for spintronic applications owing to their distinctive atomic crystal structure and exotic physical properties arising from the large bonding anisotropy. Here we introduce the first MoS2-based spin-valves that employ monolayer MoS2 as the nonmagnetic spacer. In contrast with what expected from the semiconducting band-structure of MoS2, the vertically sandwiched-MoS2 layers exhibit metallic behavior. This originates from their strong hybridization with the Ni and Fe atoms of the Permalloy (Py) electrode. The spin-valve effect is observed up to 240 K, with the highest magnetoresistance (MR) up to 0.73% at low temperatures. The experimental work is accompanied by the first principle electron transport calculations, which reveal an MR of ~ 9% for an ideal Py/MoS2/Py junction. Our results clearly identify TMDs as a promising spacer compound in magnetic tunnel junctions and may open a new avenue for the TMDs-based spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ab-initio transport across Bismuth Selenide surface barriers

We investigate the effect of potential barriers in the form of step edges on the scattering properties of Bi$_2$Se$_3$(111) topological surface states by means of large-scale ab-initio transport simulations. Our results demonstrate the suppression of perfect backscattering, while all other scattering processes, which do not entail a complete spin and momentum reversal, are allowed. Furthermore, we find that the spin of the surface state develops an out of plane component as it traverses the barrier. Our calculations reveal the existence of quasi-bound states in the vicinity of the surface barriers, which appear in the form of an enhanced density of states in the energy window corresponding to the topological state. For double barriers we demonstrate the formation of quantum well states. To complement our first-principles results we construct a two-dimensional low-energy effective model and show that band bending plays a significant role in the scattering process. Our findings are discussed in the context of a number of recent experimental works.

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preprint2014arXiv

Efficient spin injection and giant magnetoresistance in Fe/MoS$_2$/Fe junctions

We demonstrate giant magnetoresistance in Fe/MoS$_2$/Fe junctions by means of \textit{ab-initio} transport calculations. We show that junctions incorporating either a mono- or a bi-layer of MoS$_2$ are metallic and that Fe acts as an efficient spin injector into MoS$_2$ with an efficiency of about 45\%. This is the result of the strong coupling between the Fe and S atoms at the interface. For junctions of greater thickness a maximum magnetoresistance of $\sim$300\% is obtained, which remains robust with the applied bias as long as transport is in the tunneling limit. A general recipe for improving the magnetoresistance in spin valves incorporating layered transition metal dichalcogenides is proposed.

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preprint2014arXiv

Multiprobe quantum spin Hall bars

We analyze electron transport in multiprobe quantum spin Hall (QSH) bars using the Büttiker formalism and draw parallels with their quantum Hall (QH) counterparts. We find that in a QSH bar the measured resistance changes upon introducing side voltage probes, in contrast to the QH case. We also study four- and six-terminal geometries and derive the expressions for the resistances. For these our analysis is generalized from the single-channel to the multi-channel case and to the inclusion of backscattering originating from a constriction placed within the bar.

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preprint2014arXiv

Phenomenology of Andreev reflection from first-principles transport theory

We study Andreev reflection in normal metal-superconductor junctions by using an extended Blonder-Tinkham-Klapwijk model combined with transport calculations based on density functional theory. Starting from a parameter-free description of the underlying electronic structure, we perform a detailed investigation of normal metal-superconductor junctions, as the separation between the superconductor and the normal metal is varied. The results are interpreted by means of transverse momentum resolved calculations, which allow us to examine the contributions arising from different regions of the Brillouin zone. Furthermore we investigate the effect of a voltage bias on the normal metal-superconductor conductance spectra. Finally, we consider Andreev reflection in carbon nanotubes sandwiched between normal and superconducting electrodes.

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preprint2014arXiv

Proximity induced topological state in graphene

The appearance of topologically protected states at the surface of an ordinary insulator is a rare occurrence and to date only a handful of materials are known for having this property. An intriguing question concerns the possibility of forming topologically protected interfaces between different materials. Here we propose that a topological phase can be transferred to graphene by proximity with the three-dimensional topological insulator Bi$_2$Se$_3$. By using density functional and transport theory we prove that, at the verge of the chemical bond formation, a hybrid state forms at the graphene/Bi$_2$Se$_3$ interface. The state has Dirac-cone-like dispersion at the $Γ$ point and a well-defined helical spin-texture, indicating its topologically protected nature. This demonstrates that proximity can transfer the topological phase from Bi$_2$Se$_3$ to graphene.

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preprint2014arXiv

Topological tuning in three-dimensional Dirac semimetals

We study with first-principles methods the interplay between bulk and surface Dirac fermions in three dimensional Dirac semimetals. By combining density functional theory with the coherent potential approximation, we reveal a topological phase transition in Na$_3$Bi$_{1-x}$Sb$_{x}$ and Cd$_3$[As$_{1-x}$P$_x$]$_2$ alloys, where the material goes from a Dirac semimetal to a trivial insulator upon changing Sb or P concentrations. Tuning the composition allows us to engineer the position of the bulk Dirac points in reciprocal space. Interestingly, the phase transition coincides with the reversal of the band ordering between the conduction and valence bands.

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preprint2013arXiv

Gate controlled spin pumping at a quantum spin Hall edge

We propose a four-terminal device designed to manipulate by all electrical means the spin of a magnetic adatom positioned at the edge of a quantum spin Hall insulator. We show that an electrical gate, able to tune the interface resistance between a quantum spin Hall insulator and the source and drain electrodes, can switch the device between two regimes: one where the system exhibits spin pumping and the other where the adatom remains in its ground state. This demonstrates an all-electrical route to control single spins by exploiting helical edge states of topological materials.

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preprint2013arXiv

Spin-pumping and inelastic electron tunneling spectroscopy in topological insulators

We demonstrate that a quantum spin Hall current, spontaneously generated at the edge of a two-dimensional topological insulator, acts as a source of spin-pumping for a magnetic impurity with uniaxial anisotropy. One can then manipulate the impurity spin direction by means of an electrical current without using either magnetic electrodes or an external magnetic field. Furthermore we show that the unique properties of the quantum spin Hall topological state have profound effects on the inelastic electron tunneling spectrum of the impurity. For low current densities inelastic spin-flip events do not contribute to the conductance. As a consequence the conductance steps, normally appearing at voltages corresponding to the spin excitations, are completely suppressed. In contrast an intense current leads to spin pumping and generates a transverse component of the impurity spin. This breaks the topological phase yielding to the conductance steps.

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preprint2012arXiv

Andreev reflection in two-dimensional topological insulators with either conserved or broken time-reversal symmetry

We investigate Andreev reflection in two-dimensional heterojunctions formed by a superconductor in contact with a topological insulator ribbon either possessing or breaking time-reversal symmetry. Both classes of topological insulators exhibit perfect Andreev reflection, which is robust against disorder. This is assigned to topologically protected edge states. In the time-reversal symmetric case we show that doping one of the ribbon edges with magnetic impurities suppresses one Andreev channel, while no such suppression is seen in the broken symmetry situation. Based on this observation we suggest a tabletop transport experiment able to distinguish between the two types of topological insulators, which does not involve the direct measurement of the material band structure.

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preprint2012arXiv

Topological surface states scattering in Antimony

In this work we study the topologically protected states of the Sb(111) surface by using ab-initio transport theory. In the presence of a strong surface perturbation we obtain standing-wave states resulting from the superposition of spin-polarized surface states. By Fourier analysis, we identify the underlying two dimensional scattering processes and the spin texture. We find evidence of resonant transmission across surface barriers at quantum well states energies and evaluate their lifetimes. Our results are in excellent agreement with experimental findings. We also show that despite the presence of a step edge along a different high symmetry direction, not yet probed experimentally, the surface states exhibit unperturbed transmission around the Fermi energy for states with near to normal incidence.

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