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Researcher profile

Austin J. Minnich

Austin J. Minnich contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-sciquant-phphysics.ins-detastro-ph.IMcond-mat.mes-hallphysics.app-phcond-mat.str-elphysics.chem-phphysics.comp-ph

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Published work

14 published item(s)

preprint2024arXiv

Investigation of Cryogenic Current-Voltage Anomalies in SiGe HBTs: Role of Base-Emitter Junction Inhomogeneities

The deviations of cryogenic collector current-voltage characteristics of SiGe heterojunction bipolar transistors (HBTs) from ideal drift-diffusion theory have been a topic of investigation for many years. Recent work indicates that direct tunneling across the base contributes to the non-ideal current in highly-scaled devices. However, cryogenic discrepancies have been observed even in older-generation devices for which direct tunneling is negligible, suggesting another mechanism may also contribute. Although similar non-ideal current-voltage characteristics have been observed in Schottky junctions and were attributed to spatial inhomogeneities in the base-emitter junction potential, this explanation has not been considered for SiGe HBTs. Here, we experimentally investigate this hypothesis by characterizing the collector current ideality factor and built-in potential of a SiGe HBT versus temperature using a cryogenic probe station. The temperature-dependence of the ideality factor and the relation between the built-in potential as measured by capacitance-voltage and current-voltage characteristics are in good qualitative agreement with the predictions of a theory of electrical transport across a junction with a Gaussian distribution of potential barrier heights. These observations suggest that lateral inhomogeneities in the base-emitter junction potential may contribute to the cryogenic non-idealities. This work helps to identify the physical mechanisms limiting the cryogenic microwave noise performance of SiGe HBTs.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Self-heating of cryogenic high-electron-mobility transistor amplifiers and the limits of microwave noise performance

The fundamental limits of the microwave noise performance of high electron mobility transistors (HEMTs) are of scientific and practical interest for applications in radio astronomy and quantum computing. Self-heating at cryogenic temperatures has been reported to be a limiting mechanism for the noise, but cryogenic cooling strategies to mitigate it, for instance using liquid cryogens, have not been evaluated. Here, we report microwave noise measurements of a packaged two-stage HEMT amplifier immersed in normal and superfluid $^4$He baths and in vacuum from 1.6 - 80 K. We find that these liquid cryogens are unable to mitigate the thermal noise associated with self-heating. Considering this finding, we examine the implications for the lower bounds of cryogenic noise performance in HEMTs. Our analysis supports the general design principle for cryogenic HEMTs of maximizing gain at the lowest possible power.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Simulating challenging correlated molecules and materials on the Sycamore quantum processor

Simulating complex molecules and materials is an anticipated application of quantum devices. With strong quantum advantage demonstrated in artificial tasks, we examine how such advantage translates into modeling physical problems of correlated electronic structure. We simulate static and dynamical electronic structure on a superconducting quantum processor derived from Google's Sycamore architecture for two representative correlated electron problems: the nitrogenase iron-sulfur molecular clusters, and $α$-ruthenium trichloride, a proximate spin-liquid material. To do so, we simplify the electronic structure into low-energy spin models that fit on the device. With extensive error mitigation and assistance from classically simulated data, we achieve quantitatively meaningful results deploying about 1/5 of the gate resources used in artificial quantum advantage experiments on a similar architecture. This increases to over 1/2 of the gate resources when choosing a model that suits the hardware. Our work serves to convert artificial measures of quantum advantage into a physically relevant setting.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Digital quantum simulation of open quantum systems using quantum imaginary time evolution

Quantum simulation on emerging quantum hardware is a topic of intense interest. While many studies focus on computing ground state properties or simulating unitary dynamics of closed systems, open quantum systems are an interesting target of study owing to their ubiquity and rich physical behavior. However, their non-unitary dynamics are also not natural to simulate on digital quantum devices. Here, we report algorithms for the digital quantum simulation of the dynamics of open quantum systems governed by a Lindblad equation using adaptations of the quantum imaginary time evolution (QITE) algorithm. We demonstrate the algorithms on IBM Quantum's hardware with simulations of the spontaneous emission of a two level system and the dissipative transverse field Ising model. Our work advances efforts to simulate the dynamics of open quantum systems on quantum hardware.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Origin of high thermal conductivity in disentangled ultra-high molecular weight polyethylene films: ballistic phonons within enlarged crystals

The thermal transport properties of oriented polymers are of fundamental and practical interest. High thermal conductivities ($\gtrsim 50$ Wm$^{-1}$K$^{-1}$) have recently been reported in disentangled ultra-high molecular weight polyethylene (UHMWPE) films, considerably exceeding prior reported values for oriented films. However, conflicting explanations have been proposed for the microscopic origin of the high thermal conductivity. Here, we report a characterization of the thermal conductivity and mean free path accumulation function of disentangled UHMWPE films (draw ratio $\sim 200$) using cryogenic steady-state thermal conductivity measurements and transient grating spectroscopy. We observe a marked dependence of the thermal conductivity on grating period over temperatures from 30 - 300 K. Considering this observation, cryogenic bulk thermal conductivity measurements, and analysis using an anisotropic Debye model, we conclude that longitudinal atomic vibrations with mean free paths around 400 nanometers are the primary heat carriers and that the high thermal conductivity for draw ratio $\gtrsim 150$ arises from the enlargement of extended crystals with drawing. The mean free paths appear to remain limited by the extended crystal dimensions, suggesting that the upper limit of thermal conductivity of disentangled UHMWPE films has not yet been realized.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

Silicon-germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III-V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affects these limits. However, this conclusion has not been rigorously tested against theoretical predictions because prior studies modeled electron transport with empirical approaches or approximate solutions of the Boltzmann equation. Here, we study non-diffusive transport in narrow-base SiGe HBTs using an exact, semi-analytic solution of the Boltzmann equation based on an asymptotic expansion approach. We find that the computed transport characteristics are inconsistent with experiment, implying that quasiballistic electron transport is unlikely to be the origin of cryogenic non-ideal IV characteristics. Our work helps to identify the mechanisms governing the lower limits of the microwave noise figure of cryogenic HBT amplifiers.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Theory of drain noise in high electron mobility transistors based on real-space transfer

High electron mobility transistors are widely used as microwave amplifiers owing to their low microwave noise figure. Electronic noise in these devices is typically modeled by noise sources at the gate and drain. While consensus exists regarding the origin of the gate noise, that of drain noise is a topic of debate. Here, we report a theory of drain noise as a type of partition noise arising from real-space transfer of hot electrons from the channel to the barrier. The theory accounts for the magnitude and dependencies of the drain temperature and suggests strategies to realize devices with lower noise figure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A coupled cluster framework for electrons and phonons

We describe a coupled cluster framework for coupled systems of electrons and phonons. Neutral and charged excitations are accessed via the equation-of-motion version of the theory. Benchmarks on the Hubbard-Holstein model allow us to assess the strengths and weaknesses of different coupled cluster approximations which generally perform well for weak to moderate coupling. Finally, we report progress towards an implementation for {\it ab initio} calculations on solids, and present some preliminary results on finite-size models of diamond. We also report the implementation of electron-phonon coupling matrix elements from crystalline Gaussian type orbitals (cGTO) within the PySCF program package.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Determining eigenstates and thermal states on a quantum computer using quantum imaginary time evolution

The accurate computation of Hamiltonian ground, excited, and thermal states on quantum computers stands to impact many problems in the physical and computer sciences, from quantum simulation to machine learning. Given the challenges posed in constructing large-scale quantum computers, these tasks should be carried out in a resource-efficient way. In this regard, existing techniques based on phase estimation or variational algorithms display potential disadvantages; phase estimation requires deep circuits with ancillae, that are hard to execute reliably without error correction, while variational algorithms, while flexible with respect to circuit depth, entail additional high-dimensional classical optimization. Here, we introduce the quantum imaginary time evolution and quantum Lanczos algorithms, which are analogues of classical algorithms for finding ground and excited states. Compared to their classical counterparts, they require exponentially less space and time per iteration, and can be implemented without deep circuits and ancillae, or high-dimensional optimization. We furthermore discuss quantum imaginary time evolution as a subroutine to generate Gibbs averages through an analog of minimally entangled typical thermal states. Finally, we demonstrate the potential of these algorithms via an implementation using exact classical emulation as well as through prototype circuits on the Rigetti quantum virtual machine and Aspen-1 quantum processing unit.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Quantum Computation of Finite-Temperature Static and Dynamical Properties of Spin Systems Using Quantum Imaginary Time Evolution

Developing scalable quantum algorithms to study finite-temperature physics of quantum many-body systems has attracted considerable interest due to recent advancements in quantum hardware. However, such algorithms in their present form require resources that exceed the capabilities of current quantum computers except for a limited range of system sizes and observables. Here, we report calculations of finite-temperature properties including energies, static and dynamical correlation functions, and excitation spectra of spin Hamiltonians with up to four sites on five-qubit IBM Quantum devices. These calculations are performed using the quantum imaginary time evolution (QITE) algorithm and made possible by several algorithmic improvements, including a method to exploit symmetries that reduces the quantum resources required by QITE, circuit optimization procedures to reduce circuit depth, and error mitigation techniques to improve the quality of raw hardware data. Our work demonstrates that the ansatz-independent QITE algorithm is capable of computing diverse finite-temperature observables on near-term quantum devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Electronic structure of bulk manganese oxide and nickel oxide from coupled cluster theory

We describe the ground- and excited-state electronic structure of bulk MnO and NiO, two prototypical correlated electron materials, using coupled cluster theory with single and double excitations (CCSD). As a corollary, this work also reports the first implementation of unrestricted periodic ab initio equation-of motion CCSD. Starting from a Hartree-Fock reference, we find fundamental gaps of 3.46 eV and 4.83 eV for MnO and NiO respectively for the 16 unit supercell, slightly overestimated compared to experiment, although finite-size scaling suggests that the gap is more severely overestimated in the thermodynamic limit. From the character of the correlated electronic bands we find both MnO and NiO to lie in the intermediate Mott/charge-transfer insulator regime, although NiO appears as a charge transfer insulator when only the fundamental gap is considered. While the lowest quasiparticle excitations are of metal 3d and O 2p character in most of the Brillouin zone, near the Γ point, the lowest conduction band quasiparticles are of s character. Our study supports the potential of coupled cluster theory to provide high level many-body insights into correlated solids.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Low rank representations for quantum simulation of electronic structure

The quantum simulation of quantum chemistry is a promising application of quantum computers. However, for N molecular orbitals, the $\mathcal{O}(N^4)$ gate complexity of performing Hamiltonian and unitary Coupled Cluster Trotter steps makes simulation based on such primitives challenging. We substantially reduce the gate complexity of such primitives through a two-step low-rank factorization of the Hamiltonian and cluster operator, accompanied by truncation of small terms. Using truncations that incur errors below chemical accuracy, we are able to perform Trotter steps of the arbitrary basis electronic structure Hamiltonian with $\mathcal{O}(N^3)$ gate complexity in small simulations, which reduces to $\mathcal{O}(N^2 \log N)$ gate complexity in the asymptotic regime, while our unitary Coupled Cluster Trotter step has $\mathcal{O}(N^3)$ gate complexity as a function of increasing basis size for a given molecule. In the case of the Hamiltonian Trotter step, these circuits have $\mathcal{O}(N^2)$ depth on a linearly connected array, an improvement over the $\mathcal{O}(N^3)$ scaling assuming no truncation. As a practical example, we show that a chemically accurate Hamiltonian Trotter step for a 50 qubit molecular simulation can be carried out in the molecular orbital basis with as few as 4,000 layers of parallel nearest-neighbor two-qubit gates, consisting of fewer than 100,000 non-Clifford rotations. We also apply our algorithm to iron-sulfur clusters relevant for elucidating the mode of action of metalloenzymes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

The Role of Thermalizing and Non-thermalizing Walls in Phonon Heat Conduction along Thin Films

Phonon boundary scattering is typically treated using the Fuchs-Sondheimer theory, which assumes that phonons are thermalized to the local temperature at the boundary. However, whether such a thermalization process actually occurs and its effect on thermal transport remains unclear. Here we examine thermal transport along thin films with both thermalizing and non-thermalizing walls by solving the spectral Boltzmann transport equation (BTE) for steady state and transient transport. We find that in steady state, the thermal transport is governed by the Fuchs-Sondheimer theory and is insensitive to whether the boundaries are thermalizing or not. In contrast, under transient conditions, the thermal decay rates are significantly different for thermalizing and non-thermalizing walls. We also show that, for transient transport, the thermalizing boundary condition is unphysical due to violation of heat flux conservation at the boundaries. Our results provide insights into the boundary scattering process of thermal phonons over a range of heating length scales that are useful for interpreting thermal measurements on nanostructures.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coherent and Incoherent Thermal Transport in Nanomeshes

Coherent thermal transport in nanopatterned structures is a topic of considerable interest, but whether it occurs in certain structures remains unclear due to poor understanding of which phonons conduct heat. Here, we perform the first fully three-dimensional, frequency-dependent simulations of thermal transport in nanomeshes by solving the Boltzmann transport equation with a novel, efficient Monte Carlo method. From the spectral information in our simulations, we show that thermal transport in nanostructures that can be created with available lithographic techniques is dominated by incoherent boundary scattering at room temperature. Our result provides important insights into the conditions required for coherent thermal transport to occur in artificial structures.

0 citations0 reviewsNo code linkedOpen access