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Arvind Maurya

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cond-mat.str-elcond-mat.mtrl-scicond-mat.mes-hall

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7 publications

preprint2015arXiv

Anisotropic physical properties of PrRhAl4_4Si2_2 single crystal a non-magnetic singlet ground state compound

We have grown the single crystal of PrRhAl4_4Si2_2, which crystallizes in the tetragonal crystal structure. From the low temperature physical property measurements like, magnetic susceptibility, magnetization, heat capacity and electrical resistivity, we found that this compound does not show any magnetic ordering down to 70~mK. Our crystal field calculations on the magnetic susceptibility and specific heat measurements reveal that the 9-fold degenerate (2J+1)(2J+1) levels of Pr atom in PrRhAl4_4Si2_2, splits into 7 levels, with a singlet ground state and a well separated excited doublet state at 123~K, with a overall level splitting energy of 320~K.

Open access
preprint2015arXiv

Kondo lattice and antiferromagnetic behavior in quaternary CeTAl4_4Si2_2 (T~=~Rh, Ir) single crystals

We report the synthesis and the magnetic properties of single crystalline CeRhAl4_4Si2_2 and CeIrAl4_4Si2_2 and their non magnetic La-analogs. The single crystals of these quaternary compounds were grown using Al-Si binary eutectic as flux. The anisotropic magnetic properties of the cerium compounds were explored in detail by means of magnetic susceptibility, isothermal magnetization, electrical resistivity, magnetoresistivity and heat capacity measurements. Both CeRhAl4_4Si2_2 and CeIrAl4_4Si2_2 undergo two antiferromagnetic transitions, first from the paramagnetic to an antiferromagnetic state at TN1T_{\rm N1}~=~12.6~K and 15.5~K, followed by a second transition at lower temperatures TN2T_{\rm N2}~=~9.4~K and 13.8~K, respectively. The paramagnetic susceptibility is highly anisotropic and its temperature dependence in the magnetically ordered state suggests the cc-axis to be the relatively easy axis of magnetization. Concomitantly, isothermal magnetization at 2~K along the cc-axis shows a sharp spin-flop transition accompanied by a sizeable hysteresis, while it varies nearly linearly with field along the [100] direction up to the highest field 14~T, of our measurement. The electrical resistivity provides evidence of the Kondo interaction in both compounds, inferred from its −lnT-lnT behavior in the paramagnetic region. The heat capacity data confirm the bulk nature of the two magnetic transitions in each compound, and further confirm the presence of Kondo interaction by a reduced value of the entropy associated with the magnetic ordering. From the heat capacity data below 1~K, the coefficient of the linear term in the electronic heat capacity, γγ, is inferred to be 195.6 and 49.4~mJ/mol K2^2 in CeRhAl4_4Si2_2 and CeIrAl4_4Si2_2, respectively classifying these materials as moderate heavy fermion compounds.

Open access
preprint2015arXiv

Magnetic properties and complex magnetic phase diagram in non centrosymmetric EuRhGe3_3 and EuIrGe3_3 single crystals

We report the magnetic properties of two Eu based compounds, single crystalline EuIrGe3_3 and EuRhGe3_3, inferred from magnetisation, electrical transport, heat capacity and 151^{151}Eu Mössbauer spectroscopy. These previously known compounds crystallise in the non-centrosymmetric, tetragonal, I4mmI4mm, BaNiSn3_3-type structure. Single crystals of EuIrGe3_3 and EuRhGe3_3 were grown using high temperature solution growth method using In as flux. EuIrGe3_3 exhibits two magnetic orderings at TN1T_{\rm N1} = 12.4 K, and TN2T_{\rm N2} = 7.3 K. On the other hand EuRhGe3_3 presents a single magnetic transition with a TNT_{\rm N} = 12 K. 151^{151}Eu Mössbauer spectra present evidence for a cascade of transitions from paramagnetic to incommensurate amplitude modulated followed by an equal moment antiferromagnetic phase at lower temperatures in EuIrGe3_3, the transitions having a substantial first order character. On the other hand the 151^{151}Eu Mössbauer spectra at 4.2 and 9 K in EuRhGe3_3 present evidence of a single magnetic transition. In both compounds a superzone gap is observed for the current density J∥J\parallel [001], which enhances with transverse magnetic field. The magnetisation measured up to 14 T shows the occurrence of field induced transitions, which are well documented in the magnetotransport data as well. The magnetic phase diagram constructed from these data is complex, revealing the presence of many phases in the H−TH-T phase space.

Open access
preprint2014arXiv

Anisotropic putative "up-up-down" magnetic structure in EuTAl4_4Si2_2 (T = Rh and Ir)

We present detailed investigations in single crystals of two recently reported quaternary intermetallic compounds EuRhAl4_4Si2_2 and EuIrAl4_4Si2_2 employing magnetization, electrical resistivity in zero and applied fields, heat capacity and 151^{151}Eu Mössbauer spectroscopy measurements. The two compounds order antiferromagnetically at TN1T_{\rm N1} = 11.7 and 14.7\,K, respectively, each undergoing two magnetic transitions: the first from paramagnetic to incommensurate modulated antiferromagnetic, the second at lower temperature to a commensurate antiferromagnetic phase as confirmed by heat capacity and Mössbauer spectra. The magnetic properties in the ordered state present a large anisotropy despite Eu2+^{2+} being an SS-state ion for which the single-ion anisotropy is expected to be weak. Two features in the magnetization measured along the cc-axis are prominent. At 1.8\,K, a ferromagnetic-like jump occurs at very low field to a value one third of the saturation magnetization (1/3 M0_0) followed by a wide plateau up to 2\,T for T = Rh and 4\,T for T = Ir. At this field value, a sharp hysteretic spin-flop transition occurs to a fully saturated state (M0_0). Surprisingly, the magnetization does not return to origin when the field is reduced to zero in the return cycle, as expected in an antiferromagnet. Instead, a remnant magnetization 1/3 M0_0 is observed and the magnetic loop around the origin shows hysteresis. This suggests that the zero field magnetic structure has a ferromagnetic component, and we present a model with up to third neighbor exchange and dipolar interaction which reproduces the magnetization curves and hints to an "up-up-down" magnetic structure in zero field.

Open access
preprint2014arXiv

EuNiGe3, an equal moment anisotropic antiferromagnet

Single crystals of EuNiGe3_3 crystallizing in the non-centrosymmetric BaNiSn3_3-type structure have been grown using In flux, enabling us to explore the anisotropic magnetic properties which was not possible with previously reported polycrystalline samples. The EuNiGe3_3 single crystalline sample is found to order antiferromagnetically at 13.2 K as revealed from the magnetic susceptibility, heat capacity and electrical resistivity data. The low temperature magnetization M(H) is distinctly different for field parallel to ab{ab}-plane and cc-axis; the ab{ab}-plane magnetization varies nearly linearly with field before the occurrence of an induced ferromagnetic phase (spin-flip) at 6.2 Tesla; on the other hand M(H) along the cc-axis is accompanied by two metamagnetic transitions followed by a spin-flip at 4.1 T. A model including anisotropic exchange and dipole-dipole interactions reproduces the main features of magnetization plots but falls short of full representation. (H,T) phase diagrams have been constructed for the field applied along the principal directions. From the 151^{151}Eu Mössbauer spectra, we determine that the 13.2 K transition leads to an incommensurate antiferromagnetic intermediate phase followed by a transition near 10.5 K to a commensurate antiferromagnetic configuration.

Open access
preprint2013arXiv

Anisotropic magnetic properties and crystal electric field studies on CePd2_2Ge2_2 single crystal

The anisotropic magnetic properties of the antiferromagnetic compound CePd2_2Ge2_2, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical transport, magnetization and heat capacity data, the Néel temperature is confirmed to be 5.1 K. Anisotropic behaviour of magnetization and resistivity is observed along the two principal crystallographic directions viz., [100] and [001]. The isothermal magnetization measured in the magnetically ordered state at 2 K exhibits a spin re-orientation at 13.5 T for field applied along [100] direction, whereas the magnetization was linear along the [001] direction attaining a value of 0.94 μBμ_{\rm B}/Ce at 14 T. The reduced value of the magnetization is attributed to the crystalline electric field (CEF) effects. A sharp jump in the specific heat at the magnetic ordering temperature is observed. After subtracting the phononic contribution, the jump in the heat capacity amounts to 12.5 J/K mol which is the expected value for a spin 12{1}{2} system. From the CEF analysis of the magnetization data the excited crystal field split energy levels were estimated to be at 120 K and 230 K respectively, which quantitatively explain the observed Schottky anomaly in the heat capacity. A magnetic phase diagram has been constructed based on the field dependence of magnetic susceptibility and the heat capacity data.

Open access
preprint2011arXiv

Facile fabrication of lateral nanowire wrap-gate devices with improved performance

We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 cm2/Vscm^2/Vs -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.

Open access

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