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Joon Sue Lee

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Published work

12 published item(s)

preprint2023arXiv

Over 30,000-fold field enhancement of terahertz nanoresonators enabled by rapid inverse design

The rapid development of 6G communications using terahertz (THz) electromagnetic waves has created a demand for highly sensitive THz nanoresonators capable of detecting these waves. Among the potential candidates, THz nanogap loop arrays show promising characteristics but require significant computational resources for accurate simulation. This requirement arises because their unit cells are 10 times smaller than millimeter wavelengths, with nanogap regions that are 1,000,000 times smaller. To address this challenge, we propose a rapid inverse design method using physics-informed machine learning, employing double deep Q-learning with an analytical model of the THz nanogap loop array. In about 39 hours on a middle-level personal computer, our approach identifies the optimal structure through 200,000 iterations, achieving experimental electric field enhancement of 32,000 at 0.2 THz, 300 % stronger than prior results. Our analytical model-based approach significantly reduces computational resources, offering a practical alternative to numerical simulation-based inverse design

preprint2021arXiv

Large zero-bias peaks in InSb-Al hybrid semiconductor-superconductor nanowire devices

We report electron transport studies on InSb-Al hybrid semiconductor-superconductor nanowire devices. Tunnelling spectroscopy is used to measure the evolution of subgap states while varying magnetic field and voltages applied to various nearby gates. At magnetic fields between 0.7 and 0.9 T, the differential conductance contains large zero bias peaks (ZBPs) whose height reaches values on the order 2e2/h. We investigate these ZBPs for large ranges of gate voltages in different devices. We discuss possible interpretations in terms of disorder-induced subgap states, Andreev bound states and Majorana zero modes.

preprint2020arXiv

Transport Studies in a Gate-Tunable Three-Terminal Josephson Junction

Josephson junctions with three or more superconducting leads have been predicted to exhibit topological effects in the presence of few conducting modes within the interstitial normal material. Such behavior, of relevance for topologically-protected quantum bits, would lead to specific transport features measured between terminals, with topological phase transitions occurring as a function of phase and voltage bias. Although conventional, two-terminal Josephson junctions have been studied extensively, multi-terminal devices have received relatively little attention to date. Motivated in part by the possibility to ultimately observe topological phenomena in multi-terminal Josephson devices, as well as their potential for coupling gatemon qubits, here we describe the superconducting features of a top-gated mesoscopic three-terminal Josephson device. The device is based on an InAs two-dimensional electron gas (2DEG) proximitized by epitaxial aluminum. We map out the transport properties of the device as a function of bias currents, top gate voltage and magnetic field. We find a very good agreement between the zero-field experimental phase diagram and a resistively and capacitively shunted junction (RCSJ) computational model.

preprint2018arXiv

Large-scale defects hidden inside a topological insulator grown onto a 2D substrate

Topological insulator (TI) materials are exciting candidates for integration into next-generation memory and logic devices because of their potential for efficient, low-energy-consumption switching of magnetization. Specifically, the family of bismuth chalcogenides offers efficient spin-to-charge conversion because of its large spin-orbit coupling and spin-momentum locking of surface states. However, a major obstacle to realizing the promise of TIs is the thin-film materials' quality, which lags behind that of epitaxially grown semiconductors. In contrast to the latter systems, the Bi-chalcogenides form by van der Waals epitaxy, which allows them to successfully grow onto substrates with various degrees of lattice mismatch. This flexibility enables the integration of TIs into heterostructures with emerging materials, including two-dimensional materials. However, understanding and controlling local features and defects within the TI films is critical to achieving breakthrough device performance. Here, we report observations and modeling of large-scale structural defects in (Bi,Sb)$_2$Te$_3$ films grown onto hexagonal BN, highlighting unexpected symmetry-breaking rotations within the films and the coexistence of a second phase along grain boundaries. Using first-principles calculations, we show that these defects could have consequential impacts on the devices that rely on these TI films, and therefore they cannot be ignored.

preprint2016arXiv

Surface state dominated spin-charge current conversion in topological insulator/ferromagnetic insulator heterostructures

We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin films. By systematically varying the Bi2Se3 film thickness, we show that the spin-charge conversion efficiency, characterized by the inverse Rashba-Edelstein effect length (lambda_IREE), increases dramatically as the film thickness is increased from 2 quintuple layers, saturating above 6 quintuple layers. This suggests a dominant role of surface states in spin and charge interconversion in topological insulator/ferromagnet heterostructures. Our conclusion is further corroborated by studying a series of YIG/(BiSb)2Te3 heterostructures. Finally, we use the ferromagnetic resonance linewidth broadening and the inverse Rashba-Edelstein signals to determine the effective interfacial spin mixing conductance and lambda_IREE.

preprint2015arXiv

Characterizing the Structure of Topological Insulator Thin Films

We describe the characterization of structural defects that occur during molecular beam epitaxy of topological insulator thin films on commonly used substrates. Twinned domains are ubiquitous but can be reduced by growth on smooth InP (111)A substrates, depending on details of the oxide desorption. Even with a low density of twins, the lattice mismatch between (Bi,Sb)2Te3 and InP can cause tilts in the film with respect to the substrate. We also briefly discuss transport in simultaneously top and back electrically gated devices using SrTiO3 and the use of capping layers to protect topological insulator films from oxidation and exposure.

preprint2015arXiv

Mapping the chemical potential dependence of current-induced spin polarization in a topological insulator

We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices use a ferromagnetic tunnel junction (permalloy/Al2O3) as a spin detector on a back-gated (Bi,Sb)2Te3 channel. We observe hysteretic voltage signals as the magnetization of the detector ferromagnet is switched parallel or anti-parallel to the spin polariza- tion of the surface current. The amplitude of the detected voltage change is linearly proportional to the applied DC bias current in the (Bi,Sb)2Te3 channel. As the chemical potential is tuned from the bulk bands into the surface state band, we observe an enhancement of the spin-dependent voltages up to 300% within the range of the electrostatic gating. Using a simple model, we extract the spin polarization near charge neutrality (i.e. the Dirac point).

preprint2014arXiv

Ferromagnetism and Spin-dependent Transport in n-type Mn-Bi2Te3 Thin Films

We describe a detailed study of the structural, magnetic, and magneto-transport properties of single-crystal, n-type, Mn-doped Bi2Te3 thin films grown by molecular beam epitaxy. With increasing Mn concentration, the crystal structure changes from the tetradymite structure of the Bi2Te3 parent crystal at low Mn concentrations towards a BiTe phase in the (Bi2Te3)m(Bi2)n homologous series. Magnetization measurements reveal the onset of ferromagnetism with a Curie temperature in the range 13.8 K - 17 K in films with 2 % - 10 % Mn concentration. Magnetization hysteresis loops reveal that the magnetic easy axis is along the c-axis of the crystal (perpendicular to the plane). Polarized neutron reflectivity measurements of a 68 nm-thick sample show that the magnetization is uniform through the film. The presence of ferromagnetism is also manifest in a strong anomalous Hall effect and a hysteretic magnetoresistance arising from domain wall scattering. Ordinary Hall effect measurements show that the carrier density is n-type, increases with Mn doping, and is high enough (> 2.8 x 10^{13} cm^{-2}) to place the chemical potential in the conduction band. Thus, the observed ferromagnetism is likely associated with both bulk and surface states. Surprisingly, the Curie temperature does not show any clear dependence on the carrier density but does increase with Mn concentration. Our results suggest that the ferromagnetism probed in these Mn-doped Bi2Te3 films is not mediated by carriers in the conduction band or in an impurity band.

preprint2014arXiv

Room Temperature Spin Pumping in Topological Insulator Bi2Se3

Three-dimensional (3D) topological insulators are known for their strong spin-orbit coupling and the existence of spin-textured topological surface states which could be potentially exploited for spintronics. Here, we investigate spin pumping from a metallic ferromagnet (CoFeB) into a 3D topological insulator (Bi2Se3) and demonstrate successful spin injection from CoFeB into Bi2Se3 and the direct detection of the electromotive force generated by the inverse spin Hal effect (ISHE) at room temperature. The spin pumping, driven by the magnetization dynamics of the metallic ferromagnet, introduces a spin current into the topological insulator layer, resulting in a broadening of the ferromagnetic resonance (FMR) linewidth. We find that the FMR linewidth more than quintuples, the spin mixing conductance can be as large as 3.4*10^20m^-2 and the spin Hall angle can be as large as 0.23 in the Bi2Se3 layer.

preprint2013arXiv

Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

preprint2011arXiv

Current induced anisotropic magnetoresistance in topological insulator films

Topological insulators are insulating in the bulk but possess spin-momentum locked metallic surface states protected by time-reversal symmetry. The existence of these surface states has been confirmed by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). Detecting these surface states by transport measurement, which might at first appear to be the most direct avenue, was shown to be much more challenging than expected. Here, we report a detailed electronic transport study in high quality Bi2Se3 topological insulator thin films. Measurements under in-plane magnetic field, along and perpendicular to the bias current show opposite magnetoresistance. We argue that this contrasting behavior is related to the locking of the spin and current direction providing evidence for helical spin structure of the topological surface states.

preprint2011arXiv

Observation of the superconducting proximity effect and possible evidence for Pearl vortices in a candidate topological insulator

We report the observation of the superconducting proximity effect in nanoribbons of a candidate topological insulator (Bi2Se3) which is interfaced with superconducting (tungsten) contacts. We observe a supercurrent and multiple Andreev reflections for channel lengths that are much longer than the inelastic and diffusive thermal lengths deduced from normal state transport. This suggests that the proximity effect couples preferentially to a ballistic surface transport channel, even in the presence of a coexisting diffusive bulk channel. When a magnetic field is applied perpendicular to the plane of the nanoribbon, we observe magnetoresistance oscillations that are periodic in magnetic field. Quantitative comparison with a model of vortex blockade relates the occurrence of these oscillations to the formation of Pearl vortices in the region of proximity induced superconductivity.