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Researcher profile

Andrei B. Sushkov

Andrei B. Sushkov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.str-elcond-mat.mtrl-sci

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Published work

3 published item(s)

preprint2019arXiv

Optical evidence of the chiral magnetic anomaly in Weyl semimetal TaAs

Chiral pumping from optical electric fields oscillating at THz frequencies is observed in the Weyl material TaAs with electric and magnetic fields aligned along both the a- and c-axes. Free carrier spectral weight enhancement is measured directly for the first time, confirming theoretical expectations of chiral pumping. A departure from linear field-dependence of the Drude weight is observed at the highest fields in the quantum limit, providing direct evidence of field-dependent Fermi velocity of the chiral Landau level. Implications for the chiral magnetic effect in Weyl semimetals from the optical f-sum rule are discussed.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dirac cone shift of a passivated topological Bi2Se3 interface state

Gated terahertz cyclotron resonance measurements on epitaxial Bi2Se3 thin films capped with In2Se3 enable the first spectroscopic characterization of a single topological interface state from the vicinity of the Dirac point to above the conduction band edge. A precipitous drop in the scattering rate with Fermi energy is observed that is interpreted as the surface state decoupling from bulk states and evidence of a shift of the Dirac point towards mid-gap. Near the Dirac point, potential fluctuations of 50 meV are deduced from an observed loss of differential optical spectral weight near the Dirac point. Potential fluctuations are reduced by a factor of two at higher surface Fermi levels in the vicinity of the conduction band edge inferred from the width of the scattering rate step. The passivated topological interface state attains a high mobility of 3500 cm2/Vsec near the Dirac point.

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preprint2012arXiv

Giant plateau in the THz Faraday angle in gated Bi2Se3

We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau Level in the low frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.

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