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Source author record

Alexei V. Fedorov

Alexei V. Fedorov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elcond-mat.supr-conquant-ph

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Published work

13 published item(s)

preprint2022arXiv

Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

Controlling the electronic properties via bandstructure engineering is at the heart of modern semiconductor devices. Here, we extend this concept to semimetals where, utilizing LuSb as a model system, we show that quantum confinement lifts carrier compensation and differentially affects the mobility of the electron and hole-like carriers resulting in a strong modification in its large, non-saturating magnetoresistance behavior. Bonding mismatch at the heteroepitaxial interface of a semimetal (LuSb) and a semiconductor (GaSb) leads to the emergence of a novel, two-dimensional, interfacial hole gas and is accompanied by a charge transfer across the interface that provides another avenue to modify the electronic structure and magnetotransport properties in the ultra-thin limit. Our work lays out a general strategy of utilizing confined thin film geometries and heteroepitaxial interfaces to engineer electronic structure in semimetallic systems, which allows control over their magnetoresistance behavior and simultaneously, provides insights into its origin.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Identifying the fingerprints of topological states by tuning magnetoresistance in a semimetal: the case of topological half-Heusler Pt1-xAuxLuSb

Topological materials often exhibit remarkably linear, non-saturating magnetoresistance (LMR), which is both of scientific and technological importance. However, the role of topologically non-trivial states in the emergence of such a behaviour has eluded clear demonstration in experiments. Here, by reducing the coupling between the topological surface states (TSS) and the bulk carriers we controllably tune the LMR behavior in Pt1-xAuxLuSb into distinct plateaus in Hall resistance, which we show arise from a quantum Hall phase. This allowed us to reveal how smearing of the Landau levels, which otherwise give rise to a quantum Hall phase, results in an LMR behavior due to strong interaction between the TSS with a positive g-factor and the bulk carriers. We establish that controlling the coupling strength between the surface and the bulk carriers in topological materials can bring about dramatic changes in their magnetotransport behavior. In addition, our work outlines a strategy to reveal macroscopic physical observables of TSS in compounds with a semi-metallic bulk band structure, as is the case in multi-functional Heusler compounds, thereby opening up opportunities for their utilization in hybrid quantum structures.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling

Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength $λ$ $\approx$ 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Charge-Carrier Screening in Single-Layer Graphene

The effect of charge-carrier screening on the transport properties of a neutral graphene sheet is studied by directly probing its electronic structure. We find that the Fermi velocity, Dirac point velocity, and overall distortion of the Dirac cone are renormalized due to the screening of the electron-electron interaction in an unusual way. We also observe an increase of the electron mean free path due to the screening of charged impurities. These observations help us to understand the basis for the transport properties of graphene, as well as the fundamental physics of these interesting electron-electron interactions at the Dirac point crossing.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators

Topological insulators (TIs) and graphene present two unique classes of materials which are characterized by spin polarized (helical) and non-polarized Dirac-cone band structures, respectively. The importance of many-body interactions that renormalize the linear bands near Dirac point in graphene has been well recognized and attracted much recent attention. However, renormalization of the helical Dirac point has not been observed in TIs. Here, we report the experimental observation of the renormalized quasi-particle spectrum with a skewed Dirac cone in a single Bi bilayer grown on Bi2Te3 substrate, from angle-resolved photoemission spectroscopy. First-principles band calculations indicate that the quasi-particle spectra are likely associated with the hybridization between the extrinsic substrate-induced Dirac states of Bi bilayer and the intrinsic surface Dirac states of Bi2Te3 film at close energy proximity. Without such hybridization, only single-particle Dirac spectra are observed in a single Bi bilayer grown on Bi2Se3, where the extrinsic Dirac states Bi bilayer and the intrinsic Dirac states of Bi2Se3 are well separated in energy. The possible origins of many-body interactions are discussed. Our findings provide a means to manipulate topological surface states.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

A topological insulator surface under strong Coulomb, magnetic and disorder perturbations

Three dimensional topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap as demonstrated via spin-resolved ARPES measurements . This highly unusual surface environment provides a rich ground for the discovery of novel physical phenomena. Here we present the first controlled study of the topological insulator surfaces under strong Coulomb, magnetic and disorder perturbations. We have used interaction of iron, with a large Coulomb state and significant magnetic moment as a probe to \textit{systematically test the robustness} of the topological surface states of the model topological insulator Bi$_2$Se$_3$. We observe that strong perturbation leads to the creation of odd multiples of Dirac fermions and that magnetic interactions break time reversal symmetry in the presence of band hybridization. We also present a theoretical model to account for the altered surface of Bi$_2$Se$_3$. Taken collectively, these results are a critical guide in manipulating topological surfaces for probing fundamental physics or developing device applications.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Direct measurement of quantum phases in graphene via photoemission spectroscopy

Quantum phases provide us with important information for understanding the fundamental properties of a system. However, the observation of quantum phases, such as Berry's phase and the sign of the matrix element of the Hamiltonian between two non-equivalent localized orbitals in a tight-binding formalism, has been challenged by the presence of other factors, e.g., dynamic phases and spin/valley degeneracy, and the absence of methodology. Here, we report a new way to directly access these quantum phases, through polarization-dependent angle-resolved photoemission spectroscopy (ARPES), using graphene as a prototypical two-dimensional material. We show that the momentum- and polarization-dependent spectral intensity provides direct measurements of (i) the phase of the band wavefunction and (ii) the sign of matrix elements for non-equivalent orbitals. Upon rotating light polarization by π/2, we found that graphene with a Berry's phase of nπ(n=1 for single- and n=2 for double-layer graphene for Bloch wavefunction in the commonly used form) exhibits the rotation of ARPES intensity by π/n, and that ARPES signals reveal the signs of the matrix elements in both single- and double-layer graphene. The method provides a new technique to directly extract fundamental quantum electronic information on a variety of materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electron dynamics in topological insulator based semiconductor-metal interfaces (topological p-n interface based on Bi2Se3 class)

Single-Dirac-cone topological insulators (TI) are the first experimentally discovered class of three dimensional topologically ordered electronic systems, and feature robust, massless spin-helical conducting surface states that appear at any interface between a topological insulator and normal matter that lacks the topological insulator ordering. This topologically defined surface environment has been theoretically identified as a promising platform for observing a wide range of new physical phenomena, and possesses ideal properties for advanced electronics such as spin-polarized conductivity and suppressed scattering. A key missing step in enabling these applications is to understand how topologically ordered electrons respond to the interfaces and surface structures that constitute a device. Here we explore this question by using the surface deposition of cathode (Cu/In/Fe) and anode materials (NO$_2$) and control of bulk doping in Bi$_2$Se$_3$ from P-type to N-type charge transport regimes to generate a range of topological insulator interface scenarios that are fundamental to device development. The interplay of conventional semiconductor junction physics and three dimensional topological electronic order is observed to generate novel junction behaviors that go beyond the doped-insulator paradigm of conventional semiconductor devices and greatly alter the known spin-orbit interface phenomenon of Rashba splitting. Our measurements for the first time reveal new classes of diode-like configurations that can create a gap in the interface electron density near a topological Dirac point and systematically modify the topological surface state Dirac velocity, allowing far reaching control of spin-textured helical Dirac electrons inside the interface and creating advantages for TI superconductors as a Majorana fermion platform over spin-orbit semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Many-body interactions in quasi-freestanding graphene

The Landau-Fermi liquid picture for quasiparticles assumes that charge carriers are dressed by many-body interactions, forming one of the fundamental theories of solids. Whether this picture still holds for a semimetal like graphene at the neutrality point, i.e., when the chemical potential coincides with the Dirac point energy, is one of the long-standing puzzles in this field. Here we present such a study in quasi-freestanding graphene by using high-resolution angle-resolved photoemission spectroscopy. We see the electron-electron and electron-phonon interactions go through substantial changes when the semimetallic regime is approached, including renormalizations due to strong electron-electron interactions with similarities to marginal Fermi liquid behavior. These findings set a new benchmark in our understanding of many-body physics in graphene and a variety of novel materials with Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Observation of topological order in a Superconducting doped topological insulator (based on the Bi2Se3 class)

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum spin-Hall-like systems, the three dimensional (3D) topological insulators can host magnetism and superconductivity which has generated widespread research activity in condensed-matter and materials-physics communities. Thus there is an explosion of interest in understanding the rich interplay between topological and the broken-symmetry states (such as superconductivity), greatly spurred by proposals that superconductivity introduced into certain band structures will host exotic quasiparticles which are of interest in quantum information science. The observations of superconductivity in doped Bi_2Se_3 (Cu$_x$Bi$_2$Se$_3$) and doped Bi_2Te_3 (Pd$_x$-Bi$_2$Te$_3$ T$_c$ $\sim$ 5K) have raised many intriguing questions about the spin-orbit physics of these ternary complexes while any rigorous theory of superconductivity remains elusive. Here we present key measurements of electron dynamics in systematically tunable normal state of Cu$_x$Bi$_2$Se$_3$ (x=0 to 12%) gaining insights into its spin-orbit behavior and the topological nature of the surface where superconductivity takes place at low temperatures. Our data reveal that superconductivity occurs (in sample compositions) with electrons in a bulk relativistic kinematic regime and we identify that an unconventional doping mechanism causes the topological surface character of the undoped compound to be preserved at the Fermi level of the superconducting compound, where Cooper pairing occurs at low temperatures. These experimental observations provide important clues for developing a theory of topological-superconductivity in 3D topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quasi-Freestanding Multilayer Graphene Films on the Carbon Face of SiC

The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB- bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

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preprint2011arXiv

Spin-orbital groundstates of Superconducting doped topological insulators (A Majorana Platform)

The Bi$_2$Se$_3$ class of topological insulators has recently been shown to undergo a superconducting transition upon hole or electron doping (Cu$_x$-Bi$_2$Se$_3$ with T$_C$=3.8$^o$K and Pd$_x$-Bi$_2$Te$_3$ with T$_C$=5$^o$K), raising the possibilities that these are the first known "topological superconductors" or realizes a superconducting state that can be potentially used as Majorana platforms (L.A. Wray \textit{et.al.}, Nature Phys. \textbf{6}, 855-859 (2010)). We use angle resolved photoemission spectroscopy to examine the full details of the spin-orbital groundstates of these materials including Bi$_2$Te$_3$, observing that the spin-momentum locked topological surface states remain well defined and non-degenerate with respect to bulk electronic states at the Fermi level in the optimally doped superconductor and obtaining their experimental Fermi energies. The implications of this unconventional surface (that undergoes superconducting at lower temperatures) topology are discussed, and we also explore the possibility of realizing the same topology in superconducting variants of Bi$_2$Te$_3$ (with T$_C$ $\sim$ 5$^o$K). Characteristics of the experimentally measured three dimensional bulk states are examined in detail for these materials with respect to the superconducting state and topological properties, showing that a single Majorana fermion zero mode is expected to be bound at each superconducting vortex on the surface. Systematic measurements also reveal intriguing renormalization and charge correlation instabilities of the surface-localized electronic modes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Widespread spin polarization effects in photoemission from topological insulators

High resolution spin- and angle-resolved photoemission spectroscopy (spin-ARPES) was performed on the three-dimensional topological insulator Bi$_2$Se$_3$ using a recently developed high-efficiency spectrometer. The topological surface state's helical spin structure is observed, in agreement with theoretical prediction. Spin textures of both chiralities, at energies above and below the Dirac point, are observed, and the spin structure is found to persist at room temperature. The measurements reveal additional unexpected spin polarization effects, which also originate from the spin-orbit interaction, but are well differentiated from topological physics by contrasting momentum and photon energy and polarization dependencies. These observations demonstrate significant deviations of photoelectron and quasiparticle spin polarizations. Our findings illustrate the inherent complexity of spin-resolved ARPES and demonstrate key considerations for interpreting experimental results.

0 citations0 reviewsNo code linkedOpen access