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Alexandra Carvalho

Alexandra Carvalho appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scihep-phcond-mat.str-elhep-ex

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Published work

10 published item(s)

preprint2022arXiv

Microscopic theory of ionic motion in solids

Drag and diffusion of mobile ions in solids are of interest for both purely theoretical and applied scientific communities. This article proposes a theoretical description of ion drag in solids that can be used to estimate ionic conductivities in crystals, and forms a basis for the rational design of solid electrolyte materials. Starting with a general solid-state Hamiltonian, we employ the non-equilibrium path integral formalism to develop a microscopic theory of ionic transport in solids in the presence of thermal fluctuations. As required by the fluctuation-dissipation theorem, we obtain a relation between the variance of the random force and friction. Because of the crystalline nature of the system, however, the two quantities are tensorial. We use the drag tensor to write down the formula for ionic mobility, determined by the potential profile generated by the crystal's ions.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene

Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Analytical parametrization and shape classification of anomalous HH production in the EFT approach

In this document we study the effect of anomalous Higgs boson couplings on non-resonant pair production of Higgs bosons ($HH$) at the LHC. We explore the space of the five parameters $κ_λ$, $κ_{t}$, $c_2$, $c_g$, and $c_{2g}$ in terms of the corresponding kinematics of the final state, and describe a partition of the space into a limited number of regions featuring similar phenomenology in the kinematics of $HH$ final state. We call clusters the sets of points belonging to the same region; to each cluster corresponds a representative point which we call a benchmark. We discuss a possible technique to estimate the sensitivity of an experimental search to the kinematical differences between the phenomenology of the benchmark points and the rest of the parameter space contained in the corresponding cluster. We also provide an analytical parametrization of the cross-section modifications that the variation of anomalous couplings produces with respect to standard model $HH$ production along with a recipe to translate the results into other parameter-space bases. Finally, we provide a preliminary analysis of variations in the topology of the final state within each region based on recent LHC results.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Higgs Pair Production: Choosing Benchmarks With Cluster Analysis

New physics theories often depend on a large number of free parameters. The precise values of those parameters in some cases drastically affect the resulting phenomenology of fundamental physics processes, while in others finite variations can leave it basically invariant at the level of detail experimentally accessible. When designing a strategy for the analysis of experimental data in the search for a signal predicted by a new physics model, it appears advantageous to categorize the parameter space describing the model according to the corresponding kinematical features of the final state. A multi-dimensional test statistic can be used to gauge the degree of similarity in the kinematics of different models; a clustering algorithm using that metric may then allow the division of the space into homogeneous regions, each of which can be successfully represented by a benchmark point. Searches targeting those benchmark points are then guaranteed to be sensitive to a large area of the parameter space. In this document we show a practical implementation of the above strategy for the study of non-resonant production of Higgs boson pairs in the context of extensions of the standard model with anomalous couplings of the Higgs bosons. A non-standard value of those couplings may significantly enhance the Higgs pair production cross section, such that the process could be detectable with the data that the Large Hadron Collider will collect in Run 2.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Polarization and valley switching in monolayer group-IV monochalcogenides

Group-IV monochalcogenides are a family of two-dimensional puckered materials with an orthorhombic structure that is comprised of polar layers. In this article, we use first principles calculations to show the multistability of monolayer SnS and GeSe, two prototype materials where the direction of the puckering can be switched by application of tensile stress or electric field. Furthermore, the two inequivalent valleys in momentum space, which are dictated by the puckering orientation, can be excited selectively using linearly polarized light, and this provides an additional tool to identify the polarization direction. Our findings suggest that SnS and GeSe monolayers may have observable ferroelectricity and multistability, with potential applications in information storage.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Accessing the transport properties of pristine few-layer black phosphorus by van der Waals passivation in inert atmosphere

Ultrathin black phosphorus, or phosphorene, is the second known elementary two-dimensional material that can be exfoliated from a bulk van der Waals crystal. Unlike graphene it is a semiconductor with a sizeable band gap and its excellent electronic properties make it attractive for applications in transistor, logic, and optoelectronic devices. However, it is also the first widely investigated two dimensional electronic material to undergo degradation upon exposure to ambient air. Therefore a passivation method is required to study the intrinsic material properties, understand how oxidation affects the physical transport properties and to enable future application of phosphorene. Here we demonstrate that atomically thin graphene and hexagonal boron nitride crystals can be used for passivation of ultrathin black phosphorus. We report that few-layer pristine black phosphorus channels passivated in an inert gas environment, without any prior exposure to air, exhibit greatly improved n-type charge transport resulting in symmetric electron and hole trans-conductance characteristics. We attribute these results to the formation of oxygen acceptor states in air-exposed samples which drastically perturb the band structure in comparison to the pristine passivated black phosphorus.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photocarrier relaxation in two-dimensional semiconductors

Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or "band nesting" effect and corresponding divergence in the joint density of states. Here, we show using photoluminescence excitation spectroscopy that the band nesting in mono- and bilayer MX$_2$ (M = Mo, W and X = S, Se) results in excitation-dependent characteristic relaxation pathways of the photoexcited carriers. Our experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in the $k$-space, relaxing towards immediate band extrema with opposite momentum. These effects imply that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting. Our findings highlight the potential for efficient hot carrier collection using these materials as the absorbers in optoelectronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin-Orbit Proximity Effect in Graphene

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of graphene. In this work, we create an artificial interface between monolayer graphene and few-layers semiconducting tungsten disulfide (WS2). We show that in such devices graphene acquires a SOC as high as 17meV, three orders of magnitude higher than its intrinsic value, without modifying any of the structural properties of the graphene. Such proximity SOC leads to the spin Hall effect even at room temperature and opens the doors for spin FETs. We show that intrinsic defects in WS2 play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2

It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton PL. Hihgly anisotropic thermal expansion of the lattice and corresponding evolution of the band structure result in distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys. Our results show that the two valleys compete in energy in few-layer WSe2.

0 citations0 reviewsNo code linkedOpen access