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Aleksandr Rodin

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cond-mat.mes-hall cond-mat.mtrl-sci

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preprint2022arXiv

Microscopic theory of ionic motion in solids

Drag and diffusion of mobile ions in solids are of interest for both purely theoretical and applied scientific communities. This article proposes a theoretical description of ion drag in solids that can be used to estimate ionic conductivities in crystals, and forms a basis for the rational design of solid electrolyte materials. Starting with a general solid-state Hamiltonian, we employ the non-equilibrium path integral formalism to develop a microscopic theory of ionic transport in solids in the presence of thermal fluctuations. As required by the fluctuation-dissipation theorem, we obtain a relation between the variance of the random force and friction. Because of the crystalline nature of the system, however, the two quantities are tensorial. We use the drag tensor to write down the formula for ionic mobility, determined by the potential profile generated by the crystal's ions.

preprint2021arXiv

Electronic Self-passivation of Single Vacancy in Black Phosphorus via a Controlled Ionization

We report that mono-elemental black phosphorus presents a new electronic self-passivation scheme of single vacancy (SV). By means of low-temperature scanning tunneling microscopy and bond-resolved non-contact atomic force microscopy, we demonstrate that the local reconstruction and ionization of SV into negatively charged $\mathrm{SV}^-$ leads to the passivation of dangling bonds and thus the quenching of in-gap states, which can be achieved by mild thermal annealing or STM tip manipulation. SV exhibits a strong and symmetric Friedel oscillation (FO) pattern, while $\mathrm{SV}^-$ shows an asymmetric FO pattern with local perturbation amplitude reduced by one order of magnitude and a faster decay rate. The enhanced passivation by forming $\mathrm{SV}^-$ can be attributed to its weak dipole-like perturbation, consistent with density-functional theory and numerical calculations. Therefore, self-passivated $\mathrm{SV}^-$ is electronically benign and acts as a much weaker scattering center, which may hold the key to further enhance the charge mobility of BP and its analogs.

preprint2014arXiv

Spin-Orbit Proximity Effect in Graphene

The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of graphene. In this work, we create an artificial interface between monolayer graphene and few-layers semiconducting tungsten disulfide (WS2). We show that in such devices graphene acquires a SOC as high as 17meV, three orders of magnitude higher than its intrinsic value, without modifying any of the structural properties of the graphene. Such proximity SOC leads to the spin Hall effect even at room temperature and opens the doors for spin FETs. We show that intrinsic defects in WS2 play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces.