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Alexander A. Balandin

Alexander A. Balandin contributes to research discovery and scholarly infrastructure.

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Published work

23 published item(s)

preprint2026arXiv

A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for achieving ultra-low-noise performance in nanoscale and quantum electronics. Here, we demonstrate that in nanowires of the quasi-one-dimensional, fully gapped charge-density-wave material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current, I -- a striking departure from the constant value observed in conventional conductors. No residual minimum noise level is reached for the current of the electron-lattice condensate in (TaSe4)2I nanowires. Repeating the measurements for another charge-density wave conductor, NbS3-II, we found a similar reduction below the normal electron limit at room temperature. Our findings signal intrinsically lower current fluctuations within a correlated electron transport regime.

preprint2025arXiv

Charge-Density-Wave Oscillator Networks for Solving Combinatorial Optimization Problems

Many combinatorial optimization problems fall into the non-polynomial time NP-hard complexity class, characterized by computational demands that increase exponentially with the size of the problem in the worst case. Solving large-scale combinatorial optimization problems efficiently requires novel hardware solutions beyond the conventional von Neumann architecture. We propose an approach for solving a type of NP-hard problem based on coupled oscillator networks implemented with charge-density-wave condensate devices. Our prototype hardware, based on the 1T polymorph of TaS2, reveals the switching between the charge-density-wave electron-phonon condensate phases, enabling room-temperature operation of the network. The oscillator operation relies on hysteresis in current-voltage characteristics and bistability triggered by applied electrical bias. This work presents a network of injection-locked, coupled oscillators whose phase dynamics follow the Kuramoto model and demonstrates that such coupled quantum oscillators naturally evolve to a ground state capable of solving combinatorial optimization problems. The coupled oscillators based on charge-density-wave condensate phases can efficiently solve NP-hard Max-Cut benchmark problems, offering advantages over other leading oscillator-based approaches. The nature of the transitions between the charge-density-wave phases, distinctively different from resistive switching, creates the potential for low-power operation and compatibility with conventional Si technology.

preprint2022arXiv

Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS$_2$ Fillers

We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Exfoliated 1T-TaS$_2$ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of their thermo-physical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS$_2$ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly-commensurate to commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS$_2$ fillers rather than by electron-hopping transport between them. These results provide pathways for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.

preprint2022arXiv

Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices

We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

preprint2022arXiv

Low-Frequency Noise in Quasi-1D (TaSe$_4$)$_2$I Weyl Semimetal Nanoribbons

We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T~225 K. These spectral changes were attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe$_4$)$_2$I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons was surprisingly low, $\sim 10^{-9}$ um$^2$Hz$^{-1}$ at f=10 Hz, when measured below and above the Peierls transition temperature. Obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.

preprint2022arXiv

One-Dimensional van der Waals Quantum Materials -- State of the Art and Perspectives

The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material downscaling is reached while establishing an entirely new field of one-dimensional quantum materials. Here we review this emerging area of one-dimensional van der Waals quantum materials and anticipate its future directions. We focus on quantum effects associated with the charge-density-wave condensate, strongly-correlated phenomena, topological phases, and other unique physical characteristics, which are attainable specifically in van der Waals materials of lower dimensionality. Possibilities for engineering the properties of quasi-one-dimensional materials via compositional changes, vacancies, and defects, as well as the prospects of their applications in composites are also discussed.

preprint2022arXiv

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons in the same set of samples was monitored with Raman spectroscopy. It was found that the frequency and the group velocity of acoustic phonons decrease non-monotonically with the increasing boron doping concentration, revealing pronounced phonon softening. The change in the velocity of the shear horizontal and the high-frequency pseudo-longitudinal acoustic phonons in the degenerately doped diamond, as compared to the undoped diamond, was as large as ~15% and ~12%, respectively. As a result of boron doping, the velocity of the bulk longitudinal and transverse acoustic phonons decreased correspondingly. The frequency of the optical phonons was unaffected at low boron concentration but experienced a strong decrease at the high doping level. The density-functional-theory calculations of the phonon band structure for the pristine and highly-doped sample confirm the phonon softening as a result of boron doping in diamond. The obtained results have important implications for thermal transport in heavily doped diamond, which is a promising material for ultra-wide-band-gap electronics.

preprint2021arXiv

Electrically-Insulating Flexible Films with Quasi-One-Dimensional van-der-Waals Fillers as Efficient Electromagnetic Shields

We report polymer composite films containing fillers comprised of quasi-one-dimensional (1D) van der Waals materials, specifically transition metal trichalcogenides containing 1D structural motifs that enable their exfoliation into bundles of atomic threads. These nanostructures are characterized by extremely large aspect ratios of up to 10^6. The polymer composites with low loadings of quasi-1D TaSe3 fillers (below 3 vol. %) revealed excellent electromagnetic interference shielding in the X-band GHz and EHF sub-THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high-aspect-ratio electrically-conductive TaSe3 atomic-thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high-frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, electrically insulating and inexpensive.

preprint2021arXiv

Electromagnetic-Polarization Selective Composites with Quasi-1D van der Waals Metallic Fillers

We report on the preparation of flexible polymer composite films with aligned metallic fillers comprised of atomic chain bundles of the quasi-one-dimensional (1D) van der Waals material tantalum triselenide, TaSe3. The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically exfoliated TaSe3 nanowires as the grid building blocks incorporated within the thin film. Filler alignment is achieved using the "blade coating" method. Measurements conducted in the X-band frequency range demonstrate that the electromagnetic transmission through such films can be varied significantly by changing the relative orientations of the quasi-1D fillers and the polarization of the electromagnetic wave. We argue that such polarization-sensitive polymer films with quasi-1D fillers are applicable to advanced electromagnetic interference shielding in future communication systems.

preprint2021arXiv

Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment

We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.

preprint2021arXiv

Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S, dependence on the current was S ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10^-18 cm2/Hz -- 10^-16 cm2/Hz (f=10 Hz) at the current density J=1 A/cm2 at room temperature. The noise temperature dependences at different currents revealed peaks at T=375 K -- 400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

preprint2020arXiv

Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the &#34;Narrow Band Noise&#34; Concept

We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the &#34;narrow band noise,&#34; which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the &#34;narrow band noise&#34; was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the &#34;narrow band noise.&#34; Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.

preprint2020arXiv

Graphene Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band

We report on the synthesis of the epoxy-based composites with graphene fillers and testing their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high frequency (EHF) band (220 - 325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of a few-micron lateral dimensions. It was found that the electromagnetic transmission, T, is low even at small concentrations of graphene fillers: T<1% at frequency of 300 GHz for a composite with only 1 wt% of graphene. The main shielding mechanism in composites with the low graphene loading is absorption. The composites of 1 mm thickness and graphene loading of 8 wt% provide excellent electromagnetic shielding of 70 dB in the sub-terahertz EHF frequency with negligible energy reflection to the environment. The developed lightweight adhesive composites with graphene fillers can be used as electromagnetic absorbers in the high-frequency microwave radio relays, microwave remote sensors, millimeter wave scanners, and wireless local area networks.

preprint2020arXiv

High-Temperature Electromagnetic and Thermal Characteristics of Graphene Composites

We describe a method for scalable synthesis of epoxy composites with graphene and few-layer graphene fillers, and report on the electromagnetic interference (EMI) shielding and thermal properties of such composites at elevated temperatures. The tested materials reveal excellent total EMI shielding of ~65 dB (~105 dB) at a thickness of 1 mm(~2 mm) in the X-band frequency range of f=8.2 GHz - 12.4 GHz. The room-temperature cross-plane thermal conductivity of the composite with ~19.5 vol.% of fillers was determined to be ~11.2 W/mK, which is a factor of x41 larger than that of the pristine epoxy. Interestingly, the EMI shielding efficiency improves further as the temperature increases to 520 K while the thermal conductivity remains approximately constant. The excellent EMI shielding and heat conduction characteristics of such multifunctional graphene composites at elevated temperatures are promising for packaging applications of microwave components where EMI shielding and thermal management are important design considerations.

preprint2020arXiv

Properties of Shape-Engineered Phoxonic Crystals: Brillouin-Mandelstam Spectroscopy and Ellipsometry Study

We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale &#34;pillar with the hat&#34; periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices.

preprint2020arXiv

Review of Graphene-based Thermal Polymer Nanocomposites: Current State of the Art and Future Prospects

We review the current state of the art of graphene-enhanced thermal interface materials for the management of heat the next generation of electronics. Increased integration densities, speed, and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of the composites while simultaneously preserving electrical insulation. A hybrid filler -- graphene and boron nitride -- approach is presented as possible technology for independent control of electrical and thermal conduction. Reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of the graphene-enhanced thermal interface materials as compared to alternative technologies.

preprint2020arXiv

Strain controlled superconductivity in few-layer NbSe2

The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe2 have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor-insulator transitions in epitaxially grown few-layer NbSe2 with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor-insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high quality hetero-junction tunnel barriers to be seamlessly built into epitaxial NbSe2 itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.

preprint2019arXiv

Brillouin-Mandelstam Spectroscopy of Stress-Modulated Spatially Confined Spin Waves in Ni Thin Films on Piezoelectric Heterostructures

We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical analysis of the frequency dependence of the PSSW peaks on the external magnetic field reveals the asymmetric boundary condition, i.e. pinning, for variable magnetization at different surfaces of the Ni thin film. The strain field induced by applying DC voltage to PMN-PT substrate leads to a down shift of PSSW mode frequency owing to the magneto-elastic effect in Ni, and corresponding changes in the spin wave resonance conditions. The observed non-monotonic dependence of the PSSW frequency on DC voltage is related to an abrupt change of the pinning parameter at certain values of the voltage. The obtained results are important for understanding the thermal magnon spectrum in ferromagnetic films and development of the low-power spin-wave devices.

preprint2019arXiv

Low-Frequency Electronic Noise in Superlattice and Random-Packed Thin Films of Colloidal Quantum Dots

We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of 0.3 eV was extracted from the temperature dependence of the noise spectra. The noise level in the ordered films was lower than that in the weakly-ordered and random-packed films. A large variation in the magnitude of the noise spectral density was also observed in samples with different ligand treatments. The obtained results are important for application of colloidal quantum dot films in photodetectors.

preprint2019arXiv

Low-Frequency Noise in Low-Dimensional van der Waals Materials

The emergence of graphene and two-dimensional van der Walls materials renewed interest to investigation of the low-frequency noise in the low-dimensional systems. The layered van der Waals materials offers unique opportunities for studying the low-frequency noise owing to the properties controlled by the thickness of these materials, and tunable carrier concentration. In this review, we describe unusual low-frequency noise phenomena in quasi-2D and quasi-1D van der Waals materials. We also demonstrate that the low-frequency noise spectroscopy is a powerful tool for investigation of the electron transport and charge-density-wave phase transitions in this class of materials.

preprint2019arXiv

Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials

We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices.

preprint2019arXiv

Thermal Properties of the Binary-Filler Composites with Few-Layer Graphene and Copper Nanoparticles

The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the &#34;synergistic&#34; filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentration of ~15 wt% exhibits an abrupt increase as the loading of copper nanoparticles approaches ~40 wt%, followed by saturation. The effect is attributed to intercalation of spherical copper nanoparticles between the large graphene flakes, resulting in formation of the highly thermally conductive percolation network. In contrast, in composites with a high graphene concentration, ~40 wt%, the thermal conductivity increases linearly with addition of copper nanoparticles. The electrical percolation is observed at low graphene loading, less than 7 wt.%, owing to the large aspect ratio of graphene. At all concentrations of the fillers, below and above the electrical percolation threshold, the thermal transport is dominated by phonons. The obtained results shed light on the interaction between graphene fillers and copper nanoparticles in the composites and demonstrate potential of such hybrid epoxy composites for practical applications in thermal interface materials and adhesives.