Source author record

Alexander A. Balandin

Alexander A. Balandin appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

66works
11topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

66 published item(s)

preprint2026arXiv

A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for achieving ultra-low-noise performance in nanoscale and quantum electronics. Here, we demonstrate that in nanowires of the quasi-one-dimensional, fully gapped charge-density-wave material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current, I -- a striking departure from the constant value observed in conventional conductors. No residual minimum noise level is reached for the current of the electron-lattice condensate in (TaSe4)2I nanowires. Repeating the measurements for another charge-density wave conductor, NbS3-II, we found a similar reduction below the normal electron limit at room temperature. Our findings signal intrinsically lower current fluctuations within a correlated electron transport regime.

preprint2025arXiv

Charge-Density-Wave Oscillator Networks for Solving Combinatorial Optimization Problems

Many combinatorial optimization problems fall into the non-polynomial time NP-hard complexity class, characterized by computational demands that increase exponentially with the size of the problem in the worst case. Solving large-scale combinatorial optimization problems efficiently requires novel hardware solutions beyond the conventional von Neumann architecture. We propose an approach for solving a type of NP-hard problem based on coupled oscillator networks implemented with charge-density-wave condensate devices. Our prototype hardware, based on the 1T polymorph of TaS2, reveals the switching between the charge-density-wave electron-phonon condensate phases, enabling room-temperature operation of the network. The oscillator operation relies on hysteresis in current-voltage characteristics and bistability triggered by applied electrical bias. This work presents a network of injection-locked, coupled oscillators whose phase dynamics follow the Kuramoto model and demonstrates that such coupled quantum oscillators naturally evolve to a ground state capable of solving combinatorial optimization problems. The coupled oscillators based on charge-density-wave condensate phases can efficiently solve NP-hard Max-Cut benchmark problems, offering advantages over other leading oscillator-based approaches. The nature of the transitions between the charge-density-wave phases, distinctively different from resistive switching, creates the potential for low-power operation and compatibility with conventional Si technology.

preprint2022arXiv

Charge-Density-Wave Devices Printed with the Ink of Chemically Exfoliated 1T-TaS$_2$ Fillers

We report on the preparation of inks containing fillers derived from quasi-two-dimensional charge-density-wave materials, their application for inkjet printing, and the evaluation of their electronic properties in printed thin film form. The inks were prepared by liquid-phase exfoliation of CVT-grown 1T-TaS$_2$ crystals to produce fillers with nm-scale thickness and um-scale lateral dimensions. Exfoliated 1T-TaS$_2$ was dispersed in a mixture of isopropyl alcohol and ethylene glycol to allow fine-tuning of their thermo-physical properties for inkjet printing. The temperature-dependent electrical and current fluctuation measurements of printed thin films demonstrated that the charge-density-wave properties of 1T-TaS$_2$ are preserved after processing. The functionality of the printed thin-film devices can be defined by the nearly-commensurate to commensurate charge-density-wave phase transition of individual exfoliated 1T-TaS$_2$ fillers rather than by electron-hopping transport between them. These results provide pathways for the development of printed electronics with diverse functionality achieved by the incorporation of quasi-two-dimensional van der Waals quantum materials.

preprint2022arXiv

Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices

We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

preprint2022arXiv

Low-Frequency Noise in Quasi-1D (TaSe$_4$)$_2$I Weyl Semimetal Nanoribbons

We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T~225 K. These spectral changes were attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe$_4$)$_2$I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons was surprisingly low, $\sim 10^{-9}$ um$^2$Hz$^{-1}$ at f=10 Hz, when measured below and above the Peierls transition temperature. Obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.

preprint2022arXiv

One-Dimensional van der Waals Quantum Materials -- State of the Art and Perspectives

The advent of graphene and other two-dimensional van der Waals materials, with their unique electrical, optical, and thermal properties, has resulted in tremendous progress for fundamental science. Recent developments suggest that taking one more step down in dimensionality - from monolayer, atomic sheets to individual atomic chains - can bring exciting prospects as the ultimate limit in material downscaling is reached while establishing an entirely new field of one-dimensional quantum materials. Here we review this emerging area of one-dimensional van der Waals quantum materials and anticipate its future directions. We focus on quantum effects associated with the charge-density-wave condensate, strongly-correlated phenomena, topological phases, and other unique physical characteristics, which are attainable specifically in van der Waals materials of lower dimensionality. Possibilities for engineering the properties of quasi-one-dimensional materials via compositional changes, vacancies, and defects, as well as the prospects of their applications in composites are also discussed.

preprint2022arXiv

The Effects of Boron Doping on the Bulk and Surface Acoustic Phonons in Single-Crystal Diamond

We report the results of the investigation of bulk and surface acoustic phonons in the undoped and boron-doped single-crystal diamond films using the Brillouin-Mandelstam light scattering spectroscopy. The evolution of the optical phonons in the same set of samples was monitored with Raman spectroscopy. It was found that the frequency and the group velocity of acoustic phonons decrease non-monotonically with the increasing boron doping concentration, revealing pronounced phonon softening. The change in the velocity of the shear horizontal and the high-frequency pseudo-longitudinal acoustic phonons in the degenerately doped diamond, as compared to the undoped diamond, was as large as ~15% and ~12%, respectively. As a result of boron doping, the velocity of the bulk longitudinal and transverse acoustic phonons decreased correspondingly. The frequency of the optical phonons was unaffected at low boron concentration but experienced a strong decrease at the high doping level. The density-functional-theory calculations of the phonon band structure for the pristine and highly-doped sample confirm the phonon softening as a result of boron doping in diamond. The obtained results have important implications for thermal transport in heavily doped diamond, which is a promising material for ultra-wide-band-gap electronics.

preprint2021arXiv

Electrically-Insulating Flexible Films with Quasi-One-Dimensional van-der-Waals Fillers as Efficient Electromagnetic Shields

We report polymer composite films containing fillers comprised of quasi-one-dimensional (1D) van der Waals materials, specifically transition metal trichalcogenides containing 1D structural motifs that enable their exfoliation into bundles of atomic threads. These nanostructures are characterized by extremely large aspect ratios of up to 10^6. The polymer composites with low loadings of quasi-1D TaSe3 fillers (below 3 vol. %) revealed excellent electromagnetic interference shielding in the X-band GHz and EHF sub-THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high-aspect-ratio electrically-conductive TaSe3 atomic-thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high-frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, electrically insulating and inexpensive.

preprint2021arXiv

Electromagnetic-Polarization Selective Composites with Quasi-1D van der Waals Metallic Fillers

We report on the preparation of flexible polymer composite films with aligned metallic fillers comprised of atomic chain bundles of the quasi-one-dimensional (1D) van der Waals material tantalum triselenide, TaSe3. The material functionality, embedded at the nanoscale level, is achieved by mimicking the design of an electromagnetic aperture grid antenna. The processed composites employ chemically exfoliated TaSe3 nanowires as the grid building blocks incorporated within the thin film. Filler alignment is achieved using the "blade coating" method. Measurements conducted in the X-band frequency range demonstrate that the electromagnetic transmission through such films can be varied significantly by changing the relative orientations of the quasi-1D fillers and the polarization of the electromagnetic wave. We argue that such polarization-sensitive polymer films with quasi-1D fillers are applicable to advanced electromagnetic interference shielding in future communication systems.

preprint2021arXiv

Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment

We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.

preprint2021arXiv

Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S, dependence on the current was S ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10^-18 cm2/Hz -- 10^-16 cm2/Hz (f=10 Hz) at the current density J=1 A/cm2 at room temperature. The noise temperature dependences at different currents revealed peaks at T=375 K -- 400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

preprint2020arXiv

Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the "Narrow Band Noise" Concept

We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the "narrow band noise," which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the "narrow band noise" was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the "narrow band noise." Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.

preprint2020arXiv

Graphene Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band

We report on the synthesis of the epoxy-based composites with graphene fillers and testing their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high frequency (EHF) band (220 - 325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of a few-micron lateral dimensions. It was found that the electromagnetic transmission, T, is low even at small concentrations of graphene fillers: T<1% at frequency of 300 GHz for a composite with only 1 wt% of graphene. The main shielding mechanism in composites with the low graphene loading is absorption. The composites of 1 mm thickness and graphene loading of 8 wt% provide excellent electromagnetic shielding of 70 dB in the sub-terahertz EHF frequency with negligible energy reflection to the environment. The developed lightweight adhesive composites with graphene fillers can be used as electromagnetic absorbers in the high-frequency microwave radio relays, microwave remote sensors, millimeter wave scanners, and wireless local area networks.

preprint2020arXiv

High-Temperature Electromagnetic and Thermal Characteristics of Graphene Composites

We describe a method for scalable synthesis of epoxy composites with graphene and few-layer graphene fillers, and report on the electromagnetic interference (EMI) shielding and thermal properties of such composites at elevated temperatures. The tested materials reveal excellent total EMI shielding of ~65 dB (~105 dB) at a thickness of 1 mm(~2 mm) in the X-band frequency range of f=8.2 GHz - 12.4 GHz. The room-temperature cross-plane thermal conductivity of the composite with ~19.5 vol.% of fillers was determined to be ~11.2 W/mK, which is a factor of x41 larger than that of the pristine epoxy. Interestingly, the EMI shielding efficiency improves further as the temperature increases to 520 K while the thermal conductivity remains approximately constant. The excellent EMI shielding and heat conduction characteristics of such multifunctional graphene composites at elevated temperatures are promising for packaging applications of microwave components where EMI shielding and thermal management are important design considerations.

preprint2020arXiv

Properties of Shape-Engineered Phoxonic Crystals: Brillouin-Mandelstam Spectroscopy and Ellipsometry Study

We report the results of Brillouin-Mandelstam spectroscopy and Mueller matrix spectroscopic ellipsometry of the nanoscale "pillar with the hat" periodic silicon structures, revealing intriguing phononic and photonic properties. It has been theoretically shown that periodic structures with properly tuned dimensions can act simultaneously as phononic and photonic - phoxonic - crystals, strongly affecting the light-matter interactions. Acoustic phonon states can be tuned by external boundaries, either as a result of phonon confinement effects in individual nanostructures, or as a result of artificially induced external periodicity, as in the phononic crystals. The shape of the nanoscale pillar array was engineered to ensure the interplay of both effects. The Brillouin-Mandelstam spectroscopy data indicated strong flattening of the acoustic phonon dispersion in the frequency range from 2 GHz to 20 GHz and the phonon wave vector extending to the higher-order Brillouin zones. The specifics of the phonon dispersion dependence on the pillar arrays orientation suggest the presence of both periodic modulation and spatial localization effects for the acoustic phonons. The ellipsometry data reveal a distinct scatter pattern of four-fold symmetry due to nanoscale periodicity of the pillar arrays. Our results confirm the dual functionality of the nanostructured shape-engineered structure and indicate a possible new direction for fine-tuning the light-matter interaction in the next generation of photonic, optoelectronic, and phononic devices.

preprint2020arXiv

Review of Graphene-based Thermal Polymer Nanocomposites: Current State of the Art and Future Prospects

We review the current state of the art of graphene-enhanced thermal interface materials for the management of heat the next generation of electronics. Increased integration densities, speed, and power of electronic and optoelectronic devices require thermal interface materials with substantially higher thermal conductivity, improved reliability, and lower cost. Graphene has emerged as a promising filler material that can meet the demands of future high-speed and high-powered electronics. This review describes the use of graphene as a filler in curing and non-curing polymer matrices. Special attention is given to strategies for achieving the thermal percolation threshold with its corresponding characteristic increase in the overall thermal conductivity. Many applications require high thermal conductivity of the composites while simultaneously preserving electrical insulation. A hybrid filler -- graphene and boron nitride -- approach is presented as possible technology for independent control of electrical and thermal conduction. Reliability and lifespan performance of thermal interface materials is an important consideration towards the determination of appropriate practical applications. The present review addresses these issues in detail, demonstrating the promise of the graphene-enhanced thermal interface materials as compared to alternative technologies.

preprint2020arXiv

Strain controlled superconductivity in few-layer NbSe2

The controlled tunability of superconductivity in low-dimensional materials may enable new quantum devices. Particularly in triplet or topological superconductors, tunneling devices such as Josephson junctions etc. can demonstrate exotic functionalities. The tunnel barrier, an insulating or normal material layer separating two superconductors, is a key component for the junctions. Thin layers of NbSe2 have been shown as a superconductor with strong spin orbit coupling, which can give rise to topological superconductivity if driven by a large magnetic exchange field. Here we demonstrate the superconductor-insulator transitions in epitaxially grown few-layer NbSe2 with wafer-scale uniformity on insulating substrates. We provide the electrical transport, Raman spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction characterizations of the insulating phase. We show that the superconductor-insulator transition is driven by strain, which also causes characteristic energy shifts of the Raman modes. Our observation paves the way for high quality hetero-junction tunnel barriers to be seamlessly built into epitaxial NbSe2 itself, thereby enabling highly scalable tunneling devices for superconductor-based quantum electronics.

preprint2019arXiv

Brillouin-Mandelstam Spectroscopy of Stress-Modulated Spatially Confined Spin Waves in Ni Thin Films on Piezoelectric Heterostructures

We report results of micro-Brillouin-Mandelstam light scattering spectroscopy of thermal magnons in the two-phase synthetic multiferroic structure consisting of a piezoelectric (PMN-PT) substrate and a Ni thin film with the thickness of 64 nm. The experimental data reveal the first two modes of the perpendicular standing spin waves (PSSW) spatially confined across the Ni thin film. A theoretical analysis of the frequency dependence of the PSSW peaks on the external magnetic field reveals the asymmetric boundary condition, i.e. pinning, for variable magnetization at different surfaces of the Ni thin film. The strain field induced by applying DC voltage to PMN-PT substrate leads to a down shift of PSSW mode frequency owing to the magneto-elastic effect in Ni, and corresponding changes in the spin wave resonance conditions. The observed non-monotonic dependence of the PSSW frequency on DC voltage is related to an abrupt change of the pinning parameter at certain values of the voltage. The obtained results are important for understanding the thermal magnon spectrum in ferromagnetic films and development of the low-power spin-wave devices.

preprint2019arXiv

Low-Frequency Electronic Noise in Superlattice and Random-Packed Thin Films of Colloidal Quantum Dots

We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of 0.3 eV was extracted from the temperature dependence of the noise spectra. The noise level in the ordered films was lower than that in the weakly-ordered and random-packed films. A large variation in the magnitude of the noise spectral density was also observed in samples with different ligand treatments. The obtained results are important for application of colloidal quantum dot films in photodetectors.

preprint2019arXiv

Low-Frequency Noise in Low-Dimensional van der Waals Materials

The emergence of graphene and two-dimensional van der Walls materials renewed interest to investigation of the low-frequency noise in the low-dimensional systems. The layered van der Waals materials offers unique opportunities for studying the low-frequency noise owing to the properties controlled by the thickness of these materials, and tunable carrier concentration. In this review, we describe unusual low-frequency noise phenomena in quasi-2D and quasi-1D van der Waals materials. We also demonstrate that the low-frequency noise spectroscopy is a powerful tool for investigation of the electron transport and charge-density-wave phase transitions in this class of materials.

preprint2019arXiv

Phonon and Thermal Properties of Quasi-Two-Dimensional FePS3 and MnPS3 Antiferromagnetic Semiconductor Materials

We report results of investigation of the phonon and thermal properties of the exfoliated films of layered single crystals of antiferromagnetic FePS3 and MnPS3 semiconductors. The Raman spectroscopy was conducted using three different excitation lasers with the wavelengths of 325 nm (UV), 488 nm (blue), and 633 nm (red). The resonant UV-Raman spectroscopy reveals new spectral features, which are not detectable via visible Raman light scattering. The thermal conductivity of FePS3 and MnPS3 thin films was measured by two different techniques: the steady-state Raman optothermal and transient time-resolved magneto-optical Kerr effect. The Raman optothermal measurements provided the orientation-average thermal conductivity of FePS3 to be 1.35 W/mK at room temperature. The transient measurements revealed that the through-plane and in-plane thermal conductivity of FePS3 is 0.85 W/mK and 2.7 W/mK, respectively. The films of MnPS3 have higher thermal conductivity of 1.1 W/mK through-plane and 6.3 W/mK in-plane. The data obtained by both techniques reveal strong thermal anisotropy of the films and the dominant contribution of phonons to heat conduction. Our results are important for the proposed applications of the antiferromagnetic semiconductor thin films in spintronic devices.

preprint2019arXiv

Thermal Properties of the Binary-Filler Composites with Few-Layer Graphene and Copper Nanoparticles

The thermal properties of an epoxy-based binary composites comprised of graphene and copper nanoparticles are reported. It is found that the "synergistic" filler effect, revealed as a strong enhancement of the thermal conductivity of composites with the size-dissimilar fillers, has a well-defined filler loading threshold. The thermal conductivity of composites with a moderate graphene concentration of ~15 wt% exhibits an abrupt increase as the loading of copper nanoparticles approaches ~40 wt%, followed by saturation. The effect is attributed to intercalation of spherical copper nanoparticles between the large graphene flakes, resulting in formation of the highly thermally conductive percolation network. In contrast, in composites with a high graphene concentration, ~40 wt%, the thermal conductivity increases linearly with addition of copper nanoparticles. The electrical percolation is observed at low graphene loading, less than 7 wt.%, owing to the large aspect ratio of graphene. At all concentrations of the fillers, below and above the electrical percolation threshold, the thermal transport is dominated by phonons. The obtained results shed light on the interaction between graphene fillers and copper nanoparticles in the composites and demonstrate potential of such hybrid epoxy composites for practical applications in thermal interface materials and adhesives.

preprint2016arXiv

An Integrated Tantalum Sulfide - Boron Nitride - Graphene Oscillator: A Charge-Density-Wave Device Operating at Room Temperature

The charge-density-wave (CDW) phase is a macroscopic quantum state consisting of a periodic modulation of the electronic charge density accompanied by a periodic distortion of the atomic lattice in quasi-1D or layered 2D metallic crystals. Several layered transition metal dichalcogenides, such as 1T-TaSe2, 1T-TaS2 and 1T-TiSe2, exhibit unusually high transition temperatures to different CDW symmetry-reducing phases. These transitions can be affected by environmental conditions, film thickness and applied electric bias. However, device applications of these intriguing systems at room temperature or their integration with other 2D materials have not been explored. Here we show that in 2D CDW 1T-TaS2, the abrupt change in the electrical conductivity and hysteresis at the transition point between nearly-commensurate and incommensurate charge-density-wave phases can be used for constructing an oscillator that operates at room temperature. The hexagonal boron nitride was capped on 1T-TaS2 thin film to provide protection from oxidation, and an integrated graphene transistor provides a voltage tunable, matched, low-resistance load enabling precise voltage control of the oscillator frequency. The integration of these three disparate two-dimensional materials, in a way that exploits the unique properties of each, yields a simple, miniaturized, voltage-controlled oscillator device. Theoretical considerations suggest that the upper limit of oscillation frequency to be in the THz regime.

preprint2016arXiv

Thermal Transport in Graphene, Few-Layer Graphene and Graphene Nanoribbons

The discovery of unusual heat conduction properties of graphene has led to a surge of theoretical and experimental studies of phonon transport in two-dimensional material systems. The rapidly developing graphene thermal field spans from theoretical physics to practical engineering applications. In this invited review we outline different theoretical approaches developed for describing phonon transport in graphene and provide comparison with available experimental thermal conductivity data. A special attention is given to analysis of the recent theoretical results for the phonon thermal conductivity of graphene and few-layer graphene, the effects of the strain, defects, isotopes and edge scattering on the acoustic phonon transport in these material systems.

preprint2016arXiv

Two-Dimensional Oscillatory Neural Network Based on Charge-Density-Wave Devices Operating at Room Temperature

We propose an oscillatory neural network implemented with two-dimensional tantalum disulfide devices operating in the change density wave regime at room temperature. An elementary cell of the network consists of two 1T-TaS2 devices connected in series. Such a cell has constant output and oscillatory states. All cells have the same bias voltage. There is constant current flowing through the cell in the constant output mode. The oscillations occur at a certain bias voltage due to the electrical-field driven metal-to-insulator transition owing to the changes in the charge density wave phase in the 1T-TaS2 channel. Two 1T-TaS2 devices oscillate out-of-phase where one of the devices is in the insulator phase while the other one is in the metallic state. The nearest-neighbor cells are coupled via graphene transistors. The cells are resistively coupled if the graphene transistor is in the On state while they are capacitively coupled if the transistor is in the Off state. The operation of the oscillatory neural network is simulated numerically for the 30x30 node network. The results of our numerical modeling show the formation of artificial vortexes and cellular-automata type data processing. The two-dimensional 1T-TaS2 devices, utilized in the network, offer a unique combination of properties such as scalability, high operational frequency, fast synchronization speed, and radiation hardness, which makes them promising for both consumer electronic and defense applications.

preprint2015arXiv

Acoustic Phonon Spectrum and Thermal Transport in Nanoporous Alumina Arrays

We report results of a combined investigation of thermal conductivity and acoustic phonon spectra in nanoporous alumina membranes with the pore diameter decreasing from D=180 nm to 25 nm. The samples with the hexagonally arranged pores were selected to have the same porosity of ~13%. The Brillouin-Mandelstam spectroscopy measurements revealed bulk-like phonon spectrum in the samples with D=180-nm pores and spectral features, which were attributed to spatial confinement, in the samples with 25-nm and 40-nm pores. The velocity of the longitudinal acoustic phonons was reduced in the samples with smaller pores. Analysis of the experimental data and calculated phonon dispersion suggests that both phonon-boundary scattering and phonon spatial confinement affect heat conduction in membranes with the feature sizes D<40 nm.

preprint2015arXiv

Graphene Heat Spreaders and Interconnects for Advanced Electronic Applications

Graphene revealed a number of unique properties beneficial for electronics, including exceptionally high electron mobility and widely tunable Fermi level. However, graphene does not have an electron energy band gap, which presents a serious hurdle for its applications in digital electronics. A possible route for practical use of graphene in electronics is utilization of its exceptionally high thermal conductivity and electron current conducting properties. This invited review outlines the thermal properties of graphene and describes prospective graphene technologies that are not affected by the absence of the energy band gap. Specific examples include heat spreaders, thermal coatings, high-current density electrodes and interconnects. Our results suggest that thermal management of advanced electronic devices can become the first industry-scale application of graphene.

preprint2015arXiv

Phonon Engineering of the Specific Heat of Twisted Bilayer Graphene: The Role of the Out-of-Plane Phonon Modes

We investigated theoretically the specific heat of graphene, bilayer graphene and twisted bilayer graphene taking into account the exact phonon dispersion and density of states for each polarization branch. It is shown that contrary to a conventional believe the dispersion of the out-of-plane acoustic phonons - referred to as ZA phonons - deviates strongly from a parabolic law starting from the frequencies as low as ~100 1/cm. This leads to the frequency-dependent ZA phonon density of states and the breakdown of the linear dependence of the specific heat on temperature T. We established that ZA phonons determine the specific heat for T<200 K while contributions from both in-plane and out-of-plane acoustic phonons are dominant for 200 K < T < 500 K. In the high-temperature limit, T>1000 K, the optical and acoustic phonons contribute approximately equally to the specific heat. The Debye temperature for graphene and twisted bilayer graphene was calculated to be around ~1861 - 1864 K. Our results suggest that the thermodynamic properties of materials such as bilayer graphene can be controlled at the atomic scale by rotation of the sp2-carbon planes.

preprint2015arXiv

Phonon Spectrum Engineering in Rolled-up Nano- and Micro-Architectures

We report on a possibility of efficient engineering of the acoustic phonon energy spectrum in multishell tubular structures produced by a novel high-tech method of self-organization of nano- and micro-architectures. The strain-driven roll-up procedure paved the way for novel classes of metamaterials such as single semiconductor radial micro- and nano-crystals and multi-layer spiral micro- and nano-superlattices. The acoustic phonon dispersion is determined by solving the equations of elastodynamics for InAs and GaAs material systems. It is shown that the number of shells is an important control parameter of the phonon dispersion together with the structure dimensions and acoustic impedance mismatch between the superlattice layers. The obtained results suggest that rolled up nano-architectures have potential for thermoelectric applications owing to a possibility of significant reduction of the thermal conductivity without degradation of the electronic transport.

preprint2015arXiv

Review of Thermal Properties of Graphene and Few-Layer Graphene: Applications in Electronics

We review thermal properties of graphene and few-layer graphene, and discuss applications of these materials in thermal management of advanced electronics. The intrinsic thermal conductivity of graphene - among the highest of known materials - is dominated by phonons near the room temperature. The examples of thermal management applications include the few-layer graphene heat spreaders integrated near the heat generating areas of the high-power density transistors. It has been demonstrated that few-layer graphene heat spreaders can lower the hot-spot temperature during device operation resulting in improved performance and reliability of the devices.

preprint2015arXiv

Suppression of 1/f Noise in Near-Ballistic h-BN-Graphene-h-BN Heterostructure Field-Effect Transistors

We have investigated low-frequency 1/f noise in the boron nitride - grapheme - boron nitride heterostructure field - effect transistors on Si/SiO2 substrates (f is a frequency). The device channel was implemented with a single layer graphene encased between two layers of hexagonal boron nitride. The transistors had the charge carrier mobility in the range from 30000 to 36000 cm2/Vs at room temperature. It was established that the noise spectral density normalized to the channel area in such devices can be suppressed to 5 x 10^-9 μm2 Hz^-1, which is a factor of x5 - x10 lower than that in non-encapsulated graphene devices on Si/SiO2. The physical mechanism of noise suppression was attributed to screening of the charge carriers in the channel from traps in SiO2 gate dielectric and surface defects. The obtained results are important for the electronic and optoelectronic applications of graphene.

preprint2014arXiv

Specific Heat of Twisted Bilayer Graphene

We have studied the phonon specific heat in single-layer, bilayer and twisted bilayer graphene. The calculations were performed using the Born-von Karman model of lattice dynamics for intralayer atomic interactions and spherically symmetric interatomic potential for interlayer interactions. We found that at temperature T<15 K, specific heat varies with temperature as T^n, where n = 1 for graphene, n = 1.6 for bilayer graphene and n = 1.3 for the twisted bilayer graphene. The phonon specific heat reveals an intriguing dependence on the twist angle in bilayer graphene, which is particularly pronounced at low temperature. The results suggest a possibility of phonon engineering of thermal properties of layered materials by twisting the atomic planes.

preprint2013arXiv

Effects of Functionalization on Thermal Properties of Single-Wall and Multi-Wall Carbon Nanotube - Polymer Nanocomposites

Carboxylic functionalization (-COOH groups) of carbon nanotubes is known to improve their dispersion properties and increase the electrical conductivity of carbon-nanotube - polymer nanocomposites. We have studied experimentally the effects of this type of functionalization on the thermal conductivity of the nanocomposites. It was found that while even small quantities of carbon nanotubes (~1 wt%) can increase the electrical conductivity, a larger loading fraction (~3 wt%) is required to enhance the thermal conductivity of nanocomposites. Functionalized multi-wall carbon nanotubes performed the best as filler material leading to a simultaneous improvement of the electrical and thermal properties of the composites. Functionalization of the single-wall carbon nanotubes reduced the thermal conductivity enhancement. The observed trends were explained by the fact that while surface functionalization increases the coupling between carbon nanotube and polymer matrix it also leads to formation of defects, which impede the acoustic phonon transport in the single wall carbon nanotubes. The obtained results are important for applications of carbon nanotubes and graphene flakes as fillers for improving thermal, electrical and mechanical properties of composites.

preprint2013arXiv

Graphene-Based Non-Boolean Logic Circuits

Graphene revealed a number of unique properties beneficial for electronics. However, graphene does not have an energy band-gap, which presents a serious hurdle for its applications in digital logic gates. The efforts to induce a band-gap in graphene via quantum confinement or surface functionalization have not resulted in a breakthrough. Here we show that the negative differential resistance experimentally observed in graphene field-effect transistors of "conventional" design allows for construction of viable non-Boolean computational architectures with the gap-less graphene. The negative differential resistance - observed under certain biasing schemes - is an intrinsic property of graphene resulting from its symmetric band structure. Our atomistic modeling shows that the negative differential resistance appears not only in the drift-diffusion regime but also in the ballistic regime at the nanometer-scale - although the physics changes. The obtained results present a conceptual change in graphene research and indicate an alternative route for graphene's applications in information processing.

preprint2013arXiv

Graphene-Enhanced Hybrid Phase Change Materials for Thermal Management of Li-Ion Batteries

Li-ion batteries are crucial components for progress in mobile communications and transport technologies. However, Li-ion batteries suffer from strong self-heating, which limits their life-time and creates reliability and environmental problems. Here we show that thermal management and the reliability of Li-ion batteries can be drastically improved using hybrid phase change material with graphene fillers. Conventional thermal management of batteries relies on the latent heat stored in the phase change material as its phase changes over a small temperature range, thereby reducing the temperature rise inside the battery. Incorporation of graphene to the hydrocarbon-based phase change material allows one to increase its thermal conductivity by more than two orders of magnitude while preserving its latent heat storage ability. A combination of the sensible and latent heat storage together with the improved heat conduction outside of the battery pack leads to a significant decrease in the temperature rise inside a typical Li-ion battery pack. The described combined heat storage - heat conduction approach can lead to a transformative change in thermal management of Li-ion and other types of batteries.

preprint2013arXiv

Phonons in Twisted Bilayer Graphene

We theoretically investigated phonon dispersion in AA-stacked, AB-stacked and twisted bilayer graphene with various rotation angles. The calculations were performed using the Born-von-Karman model for the intra-layer atomic interactions and the Lennard-Jones potential for the inter-layer interactions. It was found that the stacking order affects the out-of-plane acoustic phonon modes the most. The difference in the phonon densities of states in the twisted bilayer graphene and in AA- or AB-stacked bilayer graphene appears in the phonon frequencies range 90 - 110 1/cm. Twisting bilayer graphene leads to emergence of new phonon branches - termed entangled phonons - which originate from mixing of phonon modes from different high-symmetry directions in the Brillouin zone. The frequencies of the entangled phonon depend strongly on the rotation angle and can be used for non-contact identification of the twist angles in graphene samples. The obtained results and tabulated frequencies of phonons in twisted bilayer graphene are important for interpretation of experimental Raman data and determining thermal conductivity of these materials systems.

preprint2013arXiv

Review of the Low-Frequency 1/f Noise in Graphene Devices

Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition. In electronics, the phenomenon, which is known as 1/f noise, flicker noise or excess noise, hampers the operation of numerous devices and circuits, and can be a significant impediment to development of practical applications from new materials. Graphene offers unique opportunities for studying 1/f noise because of its 2D structure and carrier concentration tuneable over a wide range. The creation of practical graphene-based devices will also depend on our ability to understand and control the low-frequency 1/f noise in this material system. Here, I review the characteristic features of 1/f noise in graphene and few-layer graphene, and examine the implications of such noise for the development of graphene-based electronics including high-frequency devices and sensors.

preprint2013arXiv

Strong Enhancement of Thermal Properties of Copper Films after Chemical Vapor Deposition of Graphene

We demonstrated that chemical vapor deposition of graphene on Cu films strongly enhances their thermal diffusivity and thermal conductivity. Deposition of graphene increases the thermal conductivity of 9 micrometer (25 micrometer) thick Cu films by up to 24% (16%) near room temperature. Interestingly, the observed improvement of thermal properties of graphene coated Cu films is primarily due to changes in Cu morphology during graphene deposition and associated with it temperature treatment rather than graphene's action as an additional heat conducting channel. Enhancement of thermal properties of metal films via graphene coating may lead to applications in electronic circuits and metallurgy.

preprint2013arXiv

Thermal Conductivity Inhibition in Phonon Engineered Core-Shell Cross-Section Modulated Si/Ge Nanowires

We have shown theoretically that a combination of cross-section modulation and acoustic mismatch in the core-shell Si/Ge nanowires can lead to a drastic reduction of the thermal conductivity. Our calculations, which utilized two different models - five-parameter Born-von Karman and six-parameter valence-force field - for the lattice vibrations, indicate that the room temperature thermal conductivity of Si/Ge cross-section modulated nanowires is almost three orders of magnitude lower than that of bulk Si. Thermal flux in the modulated nanowires is suppressed by an order of magnitude in comparison with generic Si nanowires. The effect is explained by modification of the phonon spectra in modulated nanowires leading to decrease of the phonon group velocities and localization of certain phonon modes in narrow or wide nanowire segments. The thermal conductivity inhibition is achieved in nanowires without additional surface roughness and, thus, potentially reducing degradation of the electron transport. Our results suggest that the acoustically mismatched cross-section modulated nanowires are promising candidates for thermoelectric applications.

preprint2013arXiv

Variability Effects in Graphene: Challenges and Opportunities for Device Engineering and Applications

Variability effects in graphene can result from the surrounding environment and the graphene material itself, which form a critical issue in examining the feasibility of graphene devices for large-scale production. From the reliability and yield perspective, these variabilities cause fluctuations in the device performance, which should be minimized via device engineering. From the metrology perspective, however, the variability effects can function as novel probing mechanisms, in which the 'signal fluctuations' can be useful for potential sensing applications. This paper presents an overview of the variability effects in graphene, with emphasis on their challenges and opportunities for device engineering and applications. The discussion can extend to other thin-film, nanowire and nanotube devices with similar variability issues, forming general interest in evaluating the promise of emerging technologies.

preprint2012arXiv

Anomalous Size Dependence of the Thermal Conductivity of Graphene Ribbons

We investigated the thermal conductivity K of graphene ribbons and graphite slabs as the function of their lateral dimensions. Our theoretical model considered the anharmonic three-phonon processes to the second-order and included the angle-dependent phonon scattering from the ribbon edges. It was found that the long mean free path of the long-wavelength acoustic phonons in graphene can lead to an unusual non-monotonic dependence of the thermal conductivity on the length L of a ribbon. The effect is pronounced for the ribbons with the smooth edges (specularity parameter p>0.5). Our results also suggest that - contrary to what was previously thought - the bulk-like 3D phonons in graphite can make a rather substantial contribution to its in-plane thermal conductivity. The Umklapp-limited thermal conductivity of graphite slabs scales, for L below ~ 10 micrometers, as log(L) while for larger L, the thermal conductivity approaches a finite value following the dependence K_0 - A\timesL^-1/2, where K_0 and A are parameters independent of the length. Our theoretical results clarify the scaling of the phonon thermal conductivity with the lateral sizes in graphene and graphite. The revealed anomalous dependence K(L) for the micrometer-size graphene ribbons can account for some of the discrepancy in reported experimental data for graphene.

preprint2012arXiv

Charge Density Waves in Exfoliated Thin Films of Van der Waals Materials

A number of the charge-density-wave materials reveal a transition to the macroscopic quantum state around 200 K. We used graphene-like mechanical exfoliation of titanium diselenide crystals to prepare a set of films with different thicknesses. The transition temperature to the charge-density-wave state was determined via modification of Raman spectra of titanium diselenide films. It was established that the transition temperature can increase from its bulk value to ~240 K as the thickness of the van-der-Waals films reduces to the nanometer range. The obtained results are important for the proposed applications of such materials in the collective-state information processing, which require room-temperature operation.

preprint2012arXiv

Direct Probing of 1/f Noise Origin with Graphene Multilayers: Surface vs. Volume

Low-frequency noise with the spectral density S(f)~1/f^g (f is the frequency and g~1) is a ubiquitous phenomenon, which hampers operation of many devices and circuits. A long-standing question of particular importance for electronics is whether 1/f noise is generated on the surface of electrical conductors or inside their volumes. Using high-quality graphene multilayers we were able to directly address this fundamental problem of the noise origin. Unlike the thickness of metal or semiconductor films, the thickness of graphene multilayers can be continuously and uniformly varied all the way down to a single atomic layer of graphene - the actual surface. We found that 1/f noise becomes dominated by the volume noise when the thickness exceeds ~7 atomic layers (~2.5 nm). The 1/f noise is the surface phenomenon below this thickness. The obtained results are important for continuous downscaling of conventional electronics and for the proposed graphene applications in sensors and communications.

preprint2012arXiv

Graphene -- Based Nanocomposites as Highly Efficient Thermal Interface Materials

We found that an optimized mixture of graphene and multilayer graphene - produced by the high-yield inexpensive liquid-phase-exfoliation technique - can lead to an extremely strong enhancement of the cross-plane thermal conductivity K of the composite. The "laser flash" measurements revealed a record-high enhancement of K by 2300 % in the graphene-based polymer at the filler loading fraction f =10 vol. %. It was determined that a relatively high concentration of single-layer and bilayer graphene flakes (~10-15%) present simultaneously with thicker multilayers of large lateral size (~ 1 micrometer) were essential for the observed unusual K enhancement. The thermal conductivity of a commercial thermal grease was increased from an initial value of ~5.8 W/mK to K=14 W/mK at the small loading f=2%, which preserved all mechanical properties of the hybrid. Our modeling results suggest that graphene - multilayer graphene nanocomposite used as the thermal interface material outperforms those with carbon nanotubes or metal nanoparticles owing to graphene's aspect ratio and lower Kapitza resistance at the graphene - matrix interface.

preprint2012arXiv

Graphene-Graphite Quilts for Thermal Management of High-Power GaN Transistors

Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits applications of the nitride-based technology. Here we demonstrate that thermal management of GaN transistors can be substantially improved via introduction of the alternative heat-escaping channels implemented with few-layer graphene - an excellent heat conductor. We have transferred few-layer graphene to AlGaN/GaN heterostructure field-effect transistors on SiC substrates to form the "graphene-graphite quilts" - lateral heat spreaders, which remove heat from the channel regions. Using the micro-Raman spectroscopy for in-situ monitoring we have shown that temperature can be lowered by as much as ~ 20oC in such devices operating at ~13-W/mm power density. The simulations suggest that the efficiency of the "graphene quilts" can be made even higher in GaN devices on thermally resistive sapphire substrates and in the designs with the closely located heat sinks. Our results open a novel application niche for few-layer graphene in high-power electronics.

preprint2012arXiv

Graphene-on-Diamond Devices with Enhanced Current-Carrying Capacity: Carbon sp2-on-sp3 Technology

Graphene demonstrated potential for practical applications owing to its excellent electronic and thermal properties. Typical graphene field-effect transistors and interconnects built on conventional SiO2/Si substrates reveal the breakdown current density on the order of 1 uA/nm2 (i.e. 10^8 A/cm2) which is ~100\times larger than the fundamental limit for the metals but still smaller than the maximum achieved in carbon nanotubes. We show that by replacing SiO2 with synthetic diamond one can substantially increase the current-carrying capacity of graphene to as high as ~18 uA/nm2 even at ambient conditions. Our results indicate that graphene's current-induced breakdown is thermally activated. We also found that the current carrying capacity of graphene can be improved not only on the single-crystal diamond substrates but also on an inexpensive ultrananocrystalline diamond, which can be produced in a process compatible with a conventional Si technology. The latter was attributed to the decreased thermal resistance of the ultrananocrystalline diamond layer at elevated temperatures. The obtained results are important for graphene's applications in high-frequency transistors, interconnects, transparent electrodes and can lead to the new planar sp2-on-sp3 carbon-on-carbon technology.

preprint2012arXiv

Phonon Transport in Graphene

Properties of phonons - quanta of the crystal lattice vibrations - in graphene have attracted strong attention of the physics and engineering communities. Acoustic phonons are the main heat carriers in graphene near room temperature while optical phonons are used for counting the number of atomic planes in Raman experiments with few-layer graphene. It was shown both theoretically and experimentally that transport properties of phonons, i.e. energy dispersion and scattering rates, are substantially different in the quasi two-dimensional system such as graphene compared to basal planes in graphite or three-dimensional bulk crystals. The unique nature of two-dimensional phonon transport translates to unusual heat conduction in graphene and related materials. In this review we outline different theoretical approaches developed for phonon transport in graphene, discuss contributions of the in-plane and cross-plane phonon modes and provide comparison with available experimental thermal conductivity data. Particular attention is given to analysis of recent theoretical results for the phonon thermal conductivity of graphene and few-layer graphene, and the effects of the strain, defects and isotopes on the phonon transport in these systems.

preprint2012arXiv

Reduction of 1/f Noise in Graphene after Electron-Beam Irradiation

We investigated the effect of the electron-beam irradiation on the level of the low-frequency 1/f noise in graphene devices. It was found that 1/f noise in graphene reveals an anomalous characteristic - it reduces with increasing concentration of defects induced by irradiation. The increased amount of structural disorder in graphene under irradiation was verified with micro-Raman spectroscopy. The bombardment of graphene devices with 20-keV electrons reduced the noise spectral density, S(I)/I^2 (I is the source-drain current) by an order-of magnitude at the radiation dose of 104 micro-C/cm^2. Our theoretical considerations suggest that the observed noise reduction after irradiation can be more readily explained if the mechanism of 1/f noise in graphene is related to the electron-mobility fluctuations. The obtained results are important for the proposed graphene applications in analog, mixed-signal and radio-frequency systems, integrated circuit interconnects and sensors.

preprint2012arXiv

Selective Gas Sensing with a Single Pristine Graphene Transistor

We show that vapors of different chemicals produce distinguishably different effects on the low-frequency noise spectra of graphene. It was found in a systematic study that some gases change the electrical resistance of graphene devices without changing their low-frequency noise spectra while other gases modify the noise spectra by inducing Lorentzian components with distinctive features. The characteristic frequency fc of the Lorentzian noise bulges in graphene devices is different for different chemicals and varies from fc=10 - 20 Hz to fc=1300 - 1600 Hz for tetrahydrofuran and chloroform vapors, respectively. The obtained results indicate that the low-frequency noise in combination with other sensing parameters can allow one to achieve the selective gas sensing with a single pristine graphene transistor. Our method of gas sensing with graphene does not require graphene surface functionalization or fabrication of an array of the devices with each tuned to a certain chemical.

preprint2012arXiv

Thermal Properties of the Hybrid Graphene-Metal Nano-Micro-Composites: Applications in Thermal Interface Materials

The authors report on synthesis and thermal properties of the electrically-conductive thermal interface materials with the hybrid graphene-metal particle fillers. The thermal conductivity of resulting composites was increased by ~500% in a temperature range from 300 K to 400 K at a small graphene loading fraction of 5-vol.-%. The unusually strong enhancement of thermal properties was attributed to the high intrinsic thermal conductivity of graphene, strong graphene coupling to matrix materials and the large range of the length-scale - from nanometers to micrometers - of the graphene and silver particle fillers. The obtained results are important for thermal management of advanced electronics and optoelectronics.

preprint2011arXiv

Graphene Thickness-Graded Transistors with Reduced Low-Frequency 1/f Noise

We demonstrate graphene thickness-graded transistors with high electron mobility and low 1/f noise (f is a frequency). The device channel is implemented with few-layer graphene with the thickness varied from a single layer in the middle to few-layers at the source and drain contacts. It was found that such devices have electron mobility comparable to the reference single-layer graphene devices while producing lower noise levels. The metal doping of graphene and difference in the electron density of states between the single-layer and few-layer graphene cause the observed noise reduction. The results shed light on the noise origin in graphene.

preprint2011arXiv

Observation of the "Memory Steps" in Graphene at Elevated Temperatures

We found that the current-voltage characteristics of the single-layer graphene field-effect transistors exhibit an intriguing feature - an abrupt change of the current near zero gate bias at elevated temperatures T > 500 K. The strength of the effect - referred to as the "memory step" by analogy with the "memory dips" - known phenomenon in electron glasses - depends on the rate of the voltage sweep. The slower the sweep - the more pronounced is the step in the current. Despite differences in examined graphene transistor characteristics, the "memory step" always appears near zero gate bias. The effect is reproducible and preserved after device aging. A similar feature has been previously observed in electronic glasses albeit at cryogenic temperatures and with opposite dependence on the rate of the voltage sweep. The observed "memory step" can be related to the slow relaxation processes in graphene. This new characteristic of electron transport in graphene can be used for applications in high-temperature sensors and switches.

preprint2011arXiv

Thermal Properties of Graphene, Carbon Nanotubes and Nanostructured Carbon Materials

Recent years witnessed a rapid growth of interest of scientific and engineering communities to thermal properties of materials. Carbon allotropes and derivatives occupy a unique place in terms of their ability to conduct heat. The room-temperature thermal conductivity of carbon materials span an extraordinary large range - of over five orders of magnitude - from the lowest in amorphous carbons to the highest in graphene and carbon nanotubes. I review thermal and thermoelectric properties of carbon materials focusing on recent results for graphene, carbon nanotubes and nanostructured carbon materials with different degrees of disorder. A special attention is given to the unusual size dependence of heat conduction in two-dimensional crystals and, specifically, in graphene. I also describe prospects of applications of graphene and carbon materials for thermal management of electronics.

preprint2011arXiv

Thermal Properties of Isotopically Engineered Graphene

In addition to its exotic electronic properties graphene exhibits unusually high intrinsic thermal conductivity. The physics of phonons - the main heat carriers in graphene - was shown to be substantially different in two-dimensional (2D) crystals, such as graphene, than in three-dimensional (3D) graphite. Here, we report our experimental study of the isotope effects on the thermal properties of graphene. Isotopically modified graphene containing various percentages of 13C were synthesized by chemical vapor deposition (CVD). The regions of different isotopic composition were parts of the same graphene sheet to ensure uniformity in material parameters. The thermal conductivity, K, of isotopically pure 12C (0.01% 13C) graphene determined by the optothermal Raman technique, was higher than 4000 W/mK at the measured temperature Tm~320 K, and more than a factor of two higher than the value of K in a graphene sheets composed of a 50%-50% mixture of 12C and 13C. The experimental data agree well with our molecular dynamics (MD) simulations, corrected for the long-wavelength phonon contributions via the Klemens model. The experimental results are expected to stimulate further studies aimed at better understanding of thermal phenomena in 2D crystals.

preprint2010arXiv

1/f Noise in Thin Films of Topological Insulator Materials

We report results of investigation of the low-frequency excess noise in device channels made from topological insulators - a new class of materials with a bulk insulating gap and conducting surface states. The thin-film bismuth selenide samples were prepared by the "graphene-like" mechanical exfoliation from bulk crystals. The fabricated four-contact devices had linear current - voltage characteristics in the low-bias regime. The current fluctuations had the noise spectral density proportional to 1/f for the frequency f below 10 kHz. The noise spectral density followed the quadratic dependence on the drain - source current. The obtained data is important for planning transport experiments with topological insulators. We suggest that achieving the pure topological insulator phase with the current conduction through the "protected" surface states can lead to noise reduction via suppression of certain scattering mechanisms.

preprint2010arXiv

Dimensional crossover of thermal transport in few-layer graphene materials

Graphene, in addition to its unique electronic and optical properties, revealed unusually high thermal conductivity. The fact that thermal conductivity of large enough graphene sheets should be higher than that of basal planes of bulk graphite was predicted theoretically by Klemens. However, the exact mechanisms behind drastic alteration of material's intrinsic ability to conduct heat as its dimensionality changes from 2-D to 3-D remain elusive. Recent availability of high-quality few-layer graphene materials allowed us to study dimensional crossover experimentally. Here we show that the room-temperature thermal conductivity changes from K~3000 W/mK to 1500 W/mK as the number of atomic plains in few-layer graphene increases from 2 to 4. We explained the observed evolution from 2-D to bulk by the cross-plane coupling of the low-energy phonons and corresponding changes in the phonon Umklapp scattering. The obtained results shed light on heat conduction in low-dimensional materials and may open up few-layer graphene applications in thermal management of nanoelectronics.

preprint2010arXiv

From Graphene to Bismuth Telluride: Mechanical Exfoliation of Quasi-2D Crystals for Applications in Thermoelectrics and Topological Insulators

Bismuth telluride (Bi2Te3) and its alloys are the best bulk thermoelectric materials known today. The stacked quasi-two-dimensional (2D) layers of Bi2Te3 were also identified as topological insulators. In this paper we describe a method for graphene-inspired exfoliation of crystalline bismuth telluride films with a thickness of a few atoms. The atomically thin films were suspended across trenches in Si/SiO2 substrates, and subjected to detail characterization. The presence of the van der Waals gaps allowed us to disassemble Bi2Te3 crystal into its quintuple building blocks - five mono-atomic sheets consisting of Te(1)-Bi-Te(2)-Bi-Te(1). By altering the thickness and sequence of atomic planes we were able to create designer non-stoichiometric quasi-2D crystalline films, change their composition and doping, as well as other properties. The exfoliated quintuples and ultra-thin films have low thermal conductivity, high electrical conductivity and enhanced thermoelectric properties. The obtained results pave the way for producing stacks of crystalline bismuth telluride quantum wells with the strong spatial confinement of charge carriers and acoustic phonons for thermoelectric devices. The developed technology for producing free-standing quasi-2D layers of Te(1)-Bi-Te(2)-Bi-Te(1) creates an impetus for investigation of the topological insulators and their possible practical applications.

preprint2010arXiv

Growth of Large-Area Graphene Films from Metal-Carbon Melts

We have demonstrated a new method for the large-area graphene growth, which can lead to a scalable low-cost high-throughput production technology. The method is based on growing single-layer or few-layer graphene films from a molten phase. The process involves dissolving carbon inside a molten metal at a specified temperature and then allowing the dissolved carbon to nucleate and grow on top of the melt at a lower temperature. The examined metals for the metal - carbon melts included copper and nickel. For the latter, pristine single layer graphene was grown successfully. The resulting graphene layers were subjected to detailed microscopic and Raman spectroscopic characterization. The deconvolution of the Raman 2D band was used to accurately determine the number of atomic planes in the resulting graphene layers and access their quality. The results indicate that our technology can provide bulk graphite films, few-layer graphene as well as high-quality single layer graphene on metals. Our approach can also be used for producing graphene-metal thermal interface materials for thermal management applications.

preprint2010arXiv

Large-Area High-Throughput Identification and Quality Control of Graphene and Few-Layer Graphene: Prospects of Industry-Scale Applications

Practical applications of graphene require a reliable high-throughput method of graphene identification and quality control, which can be used for large-scale substrates and wafers. We have proposed and experimentally tested a fast and fully automated approach for determining the number of atomic planes in graphene samples. The procedure allows for in situ identification of the borders of the regions with the same number of atomic planes. It is based on an original image processing algorithm, which utilizes micro-Raman calibration, light background subtraction, lighting non-uniformity correction, and the color and grayscale image processing for each pixel. The outcome of the developed procedure is a pseudo-color map, which marks the single-layer and few-layer graphene regions on the substrate of any size that can be captured by an optical microscope. Our approach works for various substrates, and can be applied to the mechanically exfoliated, chemically derived, deposited or epitaxial graphene on an industrial scale.

preprint2010arXiv

Mechanically-Exfoliated Stacks of Thin Films of Bismuth Telluride Topological Insulators with Enhanced Thermoelectric Performance

We report on "graphene-like" mechanical exfoliation of single-crystal Bi2Te3 films and thermoelectric characterization of the stacks of such films. Thermal conductivity of the resulting "pseudo-superlattices" was measured by the "hot disk" and "laser flash" techniques. The room-temperature in-plane (cross-plane) thermal conductivity of the stacks decreases by a factor of ~2.4 (3.5) as compared to bulk. The thermal conductivity reduction with preserved electrical properties leads to strong increase in the thermoelectric figure of merit. It is suggested that the film thinning to few-quintuples and tuning of the Fermi level can help in achieving the topological-insulator surface transport regime with an extraordinary thermoelectric efficiency.

preprint2009arXiv

"Graphene-Like" Exfoliation of Atomically-Thin Bismuth Telluride Films

We report on graphene-like exfoliation of the large-area crystalline films and ribbons of bismuth telluride with the thicknesses of a few atoms. It is demonstrated that bismuth telluride, the most important material for thermoelectric industry, can be mechanically separated into its building blocks -[Te-Bi-Te-Bi-Te]- atomic five-folds with the thickness of ~1 nm and even further - to subunits with smaller thicknesses. The atomically-thin crystals can be structured into suspended crystalline ribbons providing quantum confinement in two dimensions. The quasi two-dimensional (2-D) crystals of bismuth telluride revealed high electrical conductivity. The proposed atomic-layer engineering of bismuth telluride opens up a principally new route for drastic enhancement of the thermoelectric figure of merit.

preprint2009arXiv

Graphene Heat Spreaders for Thermal Management of Nanoelectronic Circuits

Graphene was recently proposed as a material for heat removal owing to its extremely high thermal conductivity. We simulated heat propagation in silicon-on-insulator circuits with and without graphene lateral heat spreaders. Numerical solutions of the heat propagation equations were obtained using the finite element method. The analysis was focused on the prototype silicon-on-insulator circuits with the metal-oxide-semiconductor field-effect transistors. It was found that the incorporation of graphene or few-layer graphene layers with proper heat sinks can substantially lower the temperature of the localized hot spots. The maximum temperature in the transistor channels was studied as function of graphene's thermal conductivity and the thickness of the few-layer-graphene. The developed model and obtained results are important for the design of graphene heat spreaders and interconnects.

preprint2009arXiv

Thermoelectric properties of electrically gated bismuth telluride nanowires

We theoretically studied the effect of the perpendicular electric field on the thermoelectric properties of the intrinsic, n-type and p-type bismuth telluride nanowires with the growth direction [110]. The electronic structure and the wave functions were calculated by solving self-consistently the system of the Schrodinger and Poisson equations using the spectral method. The Poisson equation was solved in terms of the Newton - Raphson method within the predictor-corrector approach. The electron - electron exchange - correlation interactions were taken into account in our analysis. In the temperature range from 77 to 500 K, the dependences of the Seebeck coefficient, thermal conductivity, electron (hole) concentration, and thermoelectric figure of merit on the nanowire thickness, gate voltage, and excess hole (electron) concentration were investigated in the constant relaxation-time approximation. The results of our calculations indicate that the external perpendicular electric field can increase the Seebeck coefficient of the bismuth telluride nanowires with thicknesses of 7 - 15 nm by nearly a factor of 2 and enhance ZT by an order of magnitude. At room temperature, ZT can reach a value as high as 3.4 under the action of the external perpendicular electric field for realistic widths of the nanowires. The obtain results may open up a completely new way for a drastic enhancement of the thermoelectric figure of merit in a wide temperature range.

preprint2009arXiv

Ultraviolet Raman Spectroscopy of Single and Multi-layer Graphene

We investigated Raman spectra of single-layer and multi-layer graphene under ultraviolet laser excitation at the wavelength of 325 nm. It was found that while the G peak of graphene remains pronounced in UV Raman spectra, the 2D band intensity undergoes severe quenching. The evolution of the ratio of the intensities of the G and 2D peaks, I(G)/I(2D), as the number of graphene layers n changes from n=1 to n=5, is different in UV Raman spectra from that in conventional visible Raman spectra excited at the 488 nm and 633 nm wavelengths. The 2D band under UV excitation shifts to larger wave numbers and is found near 2825 1/cm. The observed UV Raman features of graphene were explained by invoking the resonant scattering model. The obtained results contribute to the Raman nanometrology of graphene by providing an additional metric for determining the number of graphene layers and assessing its quality.