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Researcher profile

Sergey Rumyantsev

Sergey Rumyantsev contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elphysics.app-phquant-ph

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Published work

10 published item(s)

preprint2026arXiv

A Quieter State of Charge -- Ultra-Low-Noise Collective Current in Charge-Density-Wave Nanowires

Electronic flicker noise limits phase stability in communication systems, reduces the sensitivity and selectivity of sensors, and degrades coherence in quantum devices. There is a strong need for unconventional materials and strategies for achieving ultra-low-noise performance in nanoscale and quantum electronics. Here, we demonstrate that in nanowires of the quasi-one-dimensional, fully gapped charge-density-wave material (TaSe4)2I, low-frequency electronic noise is suppressed below the limit of thermalized charge carriers in passive resistors. When the current is dominated by the sliding Frohlich condensate, the normalized noise spectral density decreases linearly with current, I -- a striking departure from the constant value observed in conventional conductors. No residual minimum noise level is reached for the current of the electron-lattice condensate in (TaSe4)2I nanowires. Repeating the measurements for another charge-density wave conductor, NbS3-II, we found a similar reduction below the normal electron limit at room temperature. Our findings signal intrinsically lower current fluctuations within a correlated electron transport regime.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices

We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Low-Frequency Noise in Quasi-1D (TaSe$_4$)$_2$I Weyl Semimetal Nanoribbons

We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the current, S~I^2 (f is the frequency). The noise spectral density increases by almost an order of magnitude and develops Lorentzian features near the temperature T~225 K. These spectral changes were attributed to the charge-density-wave phase transition even though the temperature of the noise maximum deviates from the reported Peierls transition temperature in bulk (TaSe$_4$)$_2$I crystals. The noise level, normalized by the channel area, in these Weyl semimetal nanoribbons was surprisingly low, $\sim 10^{-9}$ um$^2$Hz$^{-1}$ at f=10 Hz, when measured below and above the Peierls transition temperature. Obtained results shed light on the specifics of electron transport in quasi-1D topological Weyl semimetals and can be important for their proposed applications as downscaled interconnects.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Electrically-Insulating Flexible Films with Quasi-One-Dimensional van-der-Waals Fillers as Efficient Electromagnetic Shields

We report polymer composite films containing fillers comprised of quasi-one-dimensional (1D) van der Waals materials, specifically transition metal trichalcogenides containing 1D structural motifs that enable their exfoliation into bundles of atomic threads. These nanostructures are characterized by extremely large aspect ratios of up to 10^6. The polymer composites with low loadings of quasi-1D TaSe3 fillers (below 3 vol. %) revealed excellent electromagnetic interference shielding in the X-band GHz and EHF sub-THz frequency ranges, while remaining DC electrically insulating. The unique electromagnetic shielding characteristics of these films are attributed to effective coupling of the electromagnetic waves to the high-aspect-ratio electrically-conductive TaSe3 atomic-thread bundles even when the filler concentration is below the electrical percolation threshold. These novel films are promising for high-frequency communication technologies, which require electromagnetic shielding films that are flexible, lightweight, corrosion resistant, electrically insulating and inexpensive.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Excess Noise in High-Current Diamond Diodes -- Physical Mechanisms and Implications for Reliability Assessment

We report results of an investigation of low-frequency excess noise in high-current diamond diodes. It was found that the electronic excess noise of the diamond diodes is dominated by generation - recombination noise, which reveals itself either as Lorentzian spectral features or as a 1/f noise spectrum (f is the frequency). The generation - recombination bulges are characteristic for diamond diodes with lower turn-on voltages. The noise spectral density dependence on forward current, I, reveals three distinctive regions in all examined devices - it scales as I^2 at the low (I<10 uA) and high (I>10 mA) currents, and, rather unusually, remain nearly constant at the intermediate current range. The characteristic trap time constants, extracted from the noise data, reveal a uniquely strong dependence on current. Interestingly, the performance of the diamond diodes improves with increasing temperature. The obtained results are important for development of noise spectroscopy-based approaches for device reliability assessment for the high-power diamond electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Low-Frequency Noise Characteristics of GaN Vertical PIN Diodes -- Effects of Current and Temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current and temperature. The as-grown and regrown diodes, with and without surface treatment have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S, dependence on the current was S ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10^-18 cm2/Hz -- 10^-16 cm2/Hz (f=10 Hz) at the current density J=1 A/cm2 at room temperature. The noise temperature dependences at different currents revealed peaks at T=375 K -- 400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. We argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Current Oscillations in Quasi-2D Charge-Density-Wave 1T-TaS2 Devices: Revisiting the &#34;Narrow Band Noise&#34; Concept

We report on current oscillations in quasi two-dimensional (2D) 1T-TaS2 charge-density-wave devices. The MHz-frequency range of the oscillations and the linear dependence of the frequency of the oscillations on the current resemble closely the &#34;narrow band noise,&#34; which was often observed in the classical bulk quasi-one-dimensional (1D) trichalcogenide charge-density-wave materials. In bulk quasi-1D materials, the &#34;narrow band noise&#34; was interpreted as a direct evidence of the charge-density-wave sliding. Despite the similarities, we argue that the nature of the MHz oscillations in quasi-2D 1T-TaS2 is different from the &#34;narrow band noise.&#34; Analysis of the biasing conditions and current indicate that the observed oscillations are related to the current instabilities due to the voltage-induced transition from the nearly commensurate to incommensurate charge-density-wave phase.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Graphene Composites as Efficient Electromagnetic Absorbers in the Extremely High Frequency Band

We report on the synthesis of the epoxy-based composites with graphene fillers and testing their electromagnetic shielding efficiency by the quasi-optic free-space method in the extremely high frequency (EHF) band (220 - 325 GHz). The curing adhesive composites were produced by a scalable technique with a mixture of single-layer and few-layer graphene layers of a few-micron lateral dimensions. It was found that the electromagnetic transmission, T, is low even at small concentrations of graphene fillers: T<1% at frequency of 300 GHz for a composite with only 1 wt% of graphene. The main shielding mechanism in composites with the low graphene loading is absorption. The composites of 1 mm thickness and graphene loading of 8 wt% provide excellent electromagnetic shielding of 70 dB in the sub-terahertz EHF frequency with negligible energy reflection to the environment. The developed lightweight adhesive composites with graphene fillers can be used as electromagnetic absorbers in the high-frequency microwave radio relays, microwave remote sensors, millimeter wave scanners, and wireless local area networks.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Low-Frequency Electronic Noise in Superlattice and Random-Packed Thin Films of Colloidal Quantum Dots

We report measurements of low-frequency electronic noise in ordered superlattice, weakly-ordered and random-packed thin films of 6.5 nm PbSe quantum dots prepared using several different ligand chemistries. For all samples, the normalized noise spectral density of the dark current revealed a Lorentzian component, reminiscent of the generation-recombination noise, superimposed on the 1/f background (f is the frequency). An activation energy of 0.3 eV was extracted from the temperature dependence of the noise spectra. The noise level in the ordered films was lower than that in the weakly-ordered and random-packed films. A large variation in the magnitude of the noise spectral density was also observed in samples with different ligand treatments. The obtained results are important for application of colloidal quantum dot films in photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Low-Frequency Noise in Low-Dimensional van der Waals Materials

The emergence of graphene and two-dimensional van der Walls materials renewed interest to investigation of the low-frequency noise in the low-dimensional systems. The layered van der Waals materials offers unique opportunities for studying the low-frequency noise owing to the properties controlled by the thickness of these materials, and tunable carrier concentration. In this review, we describe unusual low-frequency noise phenomena in quasi-2D and quasi-1D van der Waals materials. We also demonstrate that the low-frequency noise spectroscopy is a powerful tool for investigation of the electron transport and charge-density-wave phase transitions in this class of materials.

0 citations0 reviewsNo code linkedOpen access