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Xiuwen Zhang

Xiuwen Zhang appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.comp-phcond-mat.str-el

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Published work

12 published item(s)

preprint2020arXiv

Ferri-chiral compounds with potentially switchable Dresselhaus spin split-ting

Spin splitting of energy bands can be induced by relativistic spin-orbit interactions in materials without inversion symmetry. Whereas polar space group symmetries permit Rashba (R-1) spin splitting with helical spin textures in momentum space, which could be reversed upon switching a ferroelectric polarization via applied electric fields, the ordinary Dresselhaus effect (D-1A) is ac-tive only in materials exhibiting nonpolar noncentrosymmetric crystal classes with atoms occupy-ing exclusively non-polar lattice sites. Consequently, the spin-momentum locking induced by D-1A is not electric field-switchable. An alternative type of Dresselhaus symmetry, referred to as D-1B, exhibits crystal class constraints similar to D-1A (all dipoles add up to zero), but unlike D-1A, at least one polar site is occupied. We find that this behavior exists in a class of ferri-chiral crys-tals, which in principle could be reversed upon a change in chirality. Focusing on alkali metal chalcogenides, we identify NaCu5S3 in the nonentiamorphic ferri-chiral structure, which exhibits CuS3 chiral units differing in the magnitude of their Cu displacements. We then synthesize NaCu5S3 (space group P6322) and confirm its ferri-chiral structure with power x-ray diffraction. Our electronic structure calculations demonstrate it exhibits D-1B spin splitting as well as a ferri-chiral phase transition, revealing spin splitting interdependent on chirality. Our electronic struc-ture calculations show that a few percent biaxial tensile strain can reduce (or nearly quench) the switching barrier separating the monodomain ferri-chiral P6322 states. We discuss what type of external stimuli might switch the chirality so as to reverse the (non-helical) Dresselhaus D-1B spin texture, offering an alternative to the traditional reversal of the (helical) Rashba spin texture.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Two-dimensional Topological Semimetals Protected by Symmorphic Symmetries

Two-dimensional (2D) band crossing semimetals (BCSMs) could be used to build a range of novel nanoscale devices such as superlenses and transistors. We find that symmorphic symmetry can protect a new type of robust 2D BCSMs, unlike the previously proposed 2D essential BCSMs protected by non-symmorphic symmetry [Young et al., Phys. Rev. Lett. 115, 126803 (2015)]. This type of symmorphic symmetry protected (SSP) 2D essential BCSMs cannot be pair annihilated without destroying the crystalline symmetries, as opposed to the 2D BCSMs caused by the accidental band crossing. Through group theory analysis, we find that 2D SSP BCSMs can only exist at the K (K') point of Brillouin zone (BZ) of four layer groups and identify nonmagnetic 2D FeB2 as a candidate. Interestingly, nonmagnetic 2D SSP BCSMs can host a single pair of band crossing points (BCPs), whereas nonmagnetic three-dimensional (3D) Weyl semimetals (WSMs) have at least two pairs of band crossing Weyl points. It is found that the single pair of BCPs are robust against any kinds of strain. Furthermore, our calculation suggests that essential 2D SSP BCSMs can be used to realize electric field control of spin-texture, thus are promising candidates for spintronic devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Minimal Ingredients for Orbital Texture Switches at Dirac Points in Strong Spin-Orbit Coupled Materials

Recent angle resolved photoemission spectroscopy measurements on strong spin-orbit coupled materials have shown an in-plane orbital texture switch at their respective Dirac points, regardless of whether they are topological insulators or "trivial" Rashba materials. This feature has also been demonstrated in a few materials ($\text{Bi}_2\text{Se}_3$, $\text{Bi}_2\text{Te}_3$, and $\text{BiTeI}$) though DFT calculations. Here we present a minimal orbital-derived tight binding model to calculate the electron wave-function in a two-dimensional crystal lattice. We show that the orbital components of the wave-function demonstrate an orbital-texture switch in addition to the usual spin switch seen in spin polarized bands. This orbital texture switch is determined by the existence of three main properties: local or global inversion symmetry breaking, strong spin-orbit coupling, and non-local physics (the electrons are on a lattice). Using our model we demonstrate that the orbital texture switch is ubiquitous and to be expected in many real systems. The orbital hybridization of the bands is the key aspect for understanding the unique wave function properties of these materials, and this minimal model helps to establish the quantum perturbations that drive these hybridizations.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Orbital mapping of energy bands and the truncated spin polarization in three-dimensional Rashba semiconductors

Associated with spin-orbit coupling (SOC) and inversion symmetry breaking, Rashba spin polarization opens a new avenue for spintronic applications that was previously limited to ordinary magnets. However, spin polarization effects in actual Rashba systems are far more complicated than what conventional single-orbital models would suggest. By studying via first-principles DFT and a multi-orbital k.p model a 3D bulk Rashba system (free of complications by surface effects) we find that the physical origin of the leading spin polarization effects is SOC-induced hybridization between spin and multiple orbitals, especially those with nonzero orbital angular momenta. In this framework we establish a general understanding of the orbital mapping, common to the surface of topological insulators and Rashba system. Consequently, the intrinsic mechanism of various spin polarization effects, which pertain to all Rashba systems even those with global inversion symmetry, is understood as a manifestation of the orbital textures. This finding suggests a route for designing high spin-polarization materials by considering the atomic-orbital content.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Polytypism in LaOBiS2-type compounds based on different three-dimensional stacking sequences of two-dimensional BiS2 layers

LaOBiS2-type materials have drawn much attention recently because of various interesting physical properties, such as low-temperature superconductivity, hidden spin polarization, and electrically tunable Dirac cones. However, it was generally assumed that each LaOBiS2-type compound has a unique and specific crystallographic structure (with a space group P4/nmm) separated from other phases. Using first-principles total energy and stability calculations we confirm that the previous assignment of the centrosymetric P4/nmm structure to LaOBiS2 is incorrect as a phonon instability renders this structure impossible. Furthermore, we find that the unstable structure is replaced by a family of energetically closely spaced modifications (polytypes) differing by the layer sequences and orientations. We find that the local Bi-S distortion leads to three polytypes of LaOBiS2 with different stacking patterns of the distorted BiS2 layers. The energy difference between the polytypes of LaOBiS2 is merely ~1 meV/u.c., indicating the possible coexistence of all polytypes in the real sample and that the particular distribution of polytypes may be growth-induced. The in-plane distortion can be suppressed by pressure, leading to a phase transition from polytypes to the high-symmetry P4/nmm structure with a pressure larger than 2.5 GPa. In addition, different choices of the intermediate atoms (replacing La) or active atoms (BiS2) could also manifest different ground state structures. One can thus tune the distortion and the ground state by pressure or substituting covalence atoms in LaOBiS2-family.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Synthesis of a mixed-valent tin nitride and considerations of its possible crystal structures

Recent advances in theoretical structure prediction methods and high-throughput computational techniques are revolutionizing experimental discovery of the thermodynamically stable inorganic materials. Metastable materials represent a new frontier for studies, since even simple binary non ground state compounds of common elements may be awaiting discovery. However, there are significant research challenges related to non-equilibrium thin film synthesis and crystal structure predictions, such as small strained crystals in the experimental samples and energy minimization based theoretical algorithms. Here we report on experimental synthesis and characterization, as well as theoretical first-principles calculations of a previously unreported mixed-valent binary tin nitride. Thin film experiments indicate that this novel material is N-deficient SnN with tin in the mixed II/IV valence state and a small low-symmetry unit cell. Theoretical calculations suggest that the most likely crystal structure has the space group 2 (SG2) related to the distorted delafossite (SG166), which is nearly 0.1 eV/atom above the ground state SnN polymorph. This observation is rationalized by the structural similarity of the SnN distorted delafossite to the chemically related Sn3N4 spinel compound, which provides a fresh scientific insight into the reasons for growth of polymorphs of the metastable material. In addition to reporting on the discovery of the simple binary SnN compound, this paper illustrates a possible way of combining a wide range of advanced characterization techniques with the first-principle property calculation methods, to elucidate the most likely crystal structure of the previously unreported metastable materials.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Transforming common III-V and II-VI semiconductor compounds into topological heterostructures: The case of CdTe/InSb superlattices

Currently known topological insulators (TIs) are limited to narrow gap compounds incorporating heavy elements, thus severely limiting the material pool available for such applications. We show via first-principle calculations how a heterovalent superlattice made of common semiconductor building blocks can transform its non-TI components into a topological nanostructure, illustrated by III-V/II-VI superlattice InSb/CdTe. The heterovalent nature of such interfaces sets up, in the absence of interfacial atomic exchange, a natural internal electric field that along with the quantum confinement leads to band inversion, transforming these semiconductors into a topological phase while also forming a giant Rashba spin splitting. We reveal the relationship between the interfacial stability and the topological transition, finding a window of opportunity where both conditions can be optimized. Once a critical InSb layer thickness above ~ 1.5 nm is reached, both [111] and [100] superlattices have a relative energy of 5-14 meV/A2 higher than that of the atomically exchanged interface and an excitation gap up to ~150 meV, affording room-temperature quantum spin Hall effect in semiconductor superlattices. The understanding gained from this study could significantly broaden the current, rather restricted repertoire of functionalities available from individual compounds by creating next-generation super-structured functional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Intrinsic circular polarization in centrosymmetric stacks of transition-metal dichalcogenides

The circular polarization (CP) that the photoluminescence inherits from the excitation source in n monolayers of transition-metal dichalcogenides (MX2)n has been previously explained as a special feature of odd values of n, where the inversion symmetry is absent. This valley polarization effect results from the fact that in the absence of inversion, charge carriers in different band valleys could be selectively excited by different circular polarized light. Such restriction to non-centrosymmetric systems poses a limitation on the material selection for achieving CP. Although several experiments observed CP in centrosymmetric MX2 systems e.g., for bilayer in MX2, they were dismissed as being due to some extrinsic sample irregularities. Here we show that also for n = even where inversion symmetry is present and valley polarization physics is strictly absent, such intrinsic selectivity in CP is to be expected on the basis of fundamental spin-orbit physics. First-principles calculations of CP predict significant polarization for n = 2 bilayers: from 69% in MoS2 to 93% in WS2. This realization could broaden the range of materials to be considered as CP sources.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Intrinsic transparent conductors without doping

Transparent conductors (TC's) combine the usually contraindicated properties of electrical conductivity with optical transparency and are generally made by starting with a transparent insulator and making it conductive via heavy doping, an approach that generally faces severe 'doping bottlenecks'. We propose a different idea for TC design-starting with a metallic conductor and designing transparency by control of intrinsic interband transitions and intraband plasmonic frequency. We identify the specific design principles for three such prototypical intrinsic TC classes and then search computationally for materials that satisfy them. Remarkably, one of the intrinsic TC, Ag3Al22O34, is predicted also to be a prototype 3D compounds that manifest natural 2D electron gas (2DEG) regions with very high electron density and conductivity.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Search and design of nonmagnetic centrosymmetric layered crystals with large local spin polarization

Until recently, spin-polarization in nonmagnetic materials was the exclusive territory of non- centrosymmetric structures. It was recently shown that a form of hidden spin polarization (named the Rashba-2 or R-2 effect) could exist in globally centrosymmetric crystals provided the individual layers belong to polar point group symmetries. This realization could considerably broaden the range of materials that might be considered for spin-polarization spintronic applications to include the hitherto forbidden spintronic compound that belong to centrosymetric symmetries. Here we take the necessary steps to transition from such general, material-agnostic condensed matter theory arguments to material-specific design principles that could aid future laboratory search of R-2 materials. Specifically, we (i) classify different prototype layered structures that have been broadly studied in the literature in terms of their expected R-2 behavior, including the Bi2Se3-structure type (a prototype topological insulator), MoS2-structure type (a prototype valleytronic compound) and LaBiOS2-structure type (a host of superconductivity upon doping); (ii) formulate the properties that ideal R-2 compounds should have in terms of combination of their global unit cell symmetries with specific point group symmetries of their constituent sectors; (iii) use first-principles band theory to search for compounds from the prototype family of LaOBiS2-type structures that satisfy these R-2 design metrics. We initially consider both stable and hypothetical compounds to establish an understanding of trends of R-2 with composition, and then indicate the predictions that are expected to be stable and synthesizable. We predict large spin splittings (up to ~ 200 meV for holes in LaOBiTe2) as well as surface Rashba states. Experimental testing of such predictions is called for.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Prediction and accelerated laboratory discovery of previously unknown 18-electron ABX compounds

Chemists and material scientists have often focused on the properties of previously reported compounds, leaving out numerous unreported but chemically plausible compounds that could have interesting properties. For example, the 18-valence electron ABX family of compounds includes the half-Heusler subgroup, and features examples of topological insulators, thermoelectrics and superconductors, but only 83 out of 483 of these possible compounds have been made. Using first-principles thermodynamics we have examined the theoretical stability of 400 unreported members and predict that 54 should be stable. 15 previously missing materials, now predicted stable, were grown in this study; X-ray studies agreed with the predicted crystal structure in all 15 cases. Among the characterized properties of the missing compounds are potential transparent conductors, thermoelectric materials and topological semimetals. This integrated process-prediction of functionality in unreported compounds followed by laboratory synthesis and characterization-could be a route to the systematic discovery of hitherto missing, realizable functional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

False-positive and False-negative assignments of Topological Insulators in Density-Functional Theory and Hybrids

Density-functional Theory (DFT) approaches have recently been used to judge the topological order of various materials despite its well-known band gap underestimation. Use of the more accurate quasi-particle GW approach reveals here few cases where DFT identifications are false-positive, possibly misguiding experimental searches of materials that are topological insulators (TI) in DFT but not expected to be TI in reality. We also present the case of false-positive due to the incorrect choice of crystal structures and adress the relevancy of such choice of crystal structure with respect to the ground state one and thermodynamical instability with respect to binary competing phases. We conclude that it is then necessary to consider both the correct ground state crystal structure and the correct Hamiltonian in order to predict new TI.

0 citations0 reviewsNo code linkedOpen access