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Researcher profile

Alessandro Grillo

Alessandro Grillo contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallastro-ph.IMphysics.app-phcond-mat.mtrl-sci

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Published work

6 published item(s)

preprint2022arXiv

Optimization of the storage database for the Monitoring system of the CTA

We present preliminary test results for the correct sizing of the bare metal hardware that will host the database of the Monitoring system (MON) for the Cherenkov Telescope Array (CTA). The MON is the subsystem of the Array Control and Data Acquisition System (ACADA) that is responsible for monitoring and logging the overall CTA array. It acquires and stores monitoring points and logging information from the array elements, at each of the CTA sites. MON is designed and built in order to deal with big data time series, and exploits some of the currently most advanced technologies in the fields of databases and Internet of Things (IoT). To dimension the bare metal hardware required by the monitoring system (excluding the logging), we performed the test campaign that is discussed in this paper. We discuss here the best set of parameters and the optimized configuration to maximize the database data writing in terms of the number of updated rows per second. We also demonstrate the feasibility of our approach in the frame of the CTA requirements.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

The Monitoring Logging and Alarm System of the ASTRI Mini-Array gamma-ray air-Cherenkov experiment at the Observatorio del Teide

The ASTRI Mini-Array is a project for the Cherenkov astronomy in the TeV energy range. ASTRI Mini-Array consists of nine Imaging Atmospheric Cherenkov telescopes located at the Teide Observatory (Canarias Islands). Large volumes of monitoring and logging data result from the operation of a large-scale astrophysical observatory. In the last few years, several "Big Data" technologies have been developed to deal with such volumes of data, especially in the Internet of Things (IoT) framework. We present the Monitoring, Logging, and Alarm (MLA) system for the ASTRI Mini-Array aimed at supporting the analysis of scientific data and improving the operational activities of the telescope facility. The MLA system was designed and built considering the latest software tools and concepts coming from Big Data and IoT to respond to the challenges posed by the operation of the array. A particular relevance has been given to satisfying the reliability, availability, and maintainability requirements towards all the array sub-systems and auxiliary devices. The system architecture has been designed to scale up with the number of devices to be monitored and with the number of software components to be considered in the distributed logging system.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field emission characteristics of InSb patterned nanowires

InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-controlled field emission current from MoS$_2$ nanosheets

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors

A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods

The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the intrinsic great properties of graphene. In this paper, we fabricate graphene field-effect transistors with different geometries to study the contact and channel resistance as well as the carrier mobility as a function of gate voltage and temperature. We apply the transfer length method and the y-function method showing that the two approaches can complement each other to evaluate the contact resistance and prevent artifacts in the estimation of the gate-voltage dependence of the carrier mobility. We find that the gate voltage modulates the contact and the channel resistance in a similar way but does not change the carrier mobility. We also show that the raising temperature lowers the carrier mobility, has negligible effect on the contact resistance, and can induce a transition from a semiconducting to a metallic behavior of the graphene sheet resistance, depending on the applied gate voltage. Finally we show that eliminating the detrimental effects of the contact resistance on the transistor channel current almost doubles the carrier field-effect mobility and that a competitive contact resistance an be achieved by the zig-zag shaping of the Ni contact.

0 citations0 reviewsNo code linkedOpen access