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Filippo Giubileo

Filippo Giubileo appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.supr-conphysics.app-ph

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Published work

12 published item(s)

preprint2020arXiv

Field emission characteristics of InSb patterned nanowires

InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb nanowires are investigated by using a nano-manipulated tungsten probe-tip as anode inside the vacuum chamber of a scanning electron microscope. Stable field emission current is reported, with a maximum intensity extracted from a single nanowire of about 1$μA$, corresponding to a current density as high as 10$^4$ A/cm$^2$. Stability and robustness of nanowire is probed by monitoring field emission current for about three hours. By tuning the cathode-anode separation distance in the range 500nm - 1300nm, the field enhancement factor and the turn-on field exhibit a non-monotonic dependence, with a maximum enhancement $β\simeq $ 78 and a minimum turn-on field $E_{ON} \simeq$ 0.033 V/nm for a separation d =900nm. The reduction of spatial separation between nanowires and the increase of diameter cause the reduction of the field emission performance, with reduced field enhancement ($β<$ 60) and increased turn-on field ($E_{ON} \simeq $ 0.050 V/nm). Finally, finite element simulation of the electric field distribution in the system demonstrates that emission is limited to an effective area near the border of the nanowire top surface, with annular shape and maximum width of 10 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Field emission from AlGaN nanowires with low turn-on field

We fabricate AlGaN nanowires by molecular beam epitaxy and we investigate their field emission properties by means of an experimental setup using nano-manipulated tungsten tips as electrodes, inside a scanning electron microscope. The tip-shaped anode gives access to local properties and allows collecting electrons emitted from areas as small as 1$μm^2$. The field emission characteristics are analyzed in the framework of Fowler-Nordheim theory and we find a field enhancement factor as high as $β$ = 556 and a minimum turn-on field $E_{turn-on}$ = 17 V/$μ$m for a cathode-anode separation distance d = 500 nm. We show that for increasing separation distance, $E_{turn-on}$ increases up to about 35 V/$μ$m and $β$ decreases to 100 at d = 1600 nm. We also demonstrate the time stability of the field emission current from AlGaN nanowires for several minutes. Finally, we explain the observation of modified slope of the Fowler-Nordheim plots at low fields in terms of non-homogeneous field enhancement factors due to the presence of protruding emitters.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Gate-controlled field emission current from MoS$_2$ nanosheets

Monolayer molybdenum disulfide (MoS$_2$) nanosheets, obtained via chemical vapor deposition onto SiO$_2$/Si substrates, are exploited to fabricate field-effect transistors with n-type conduction, high on/off ratio, steep subthreshold slope and good mobility. The transistor channel conductance increases with the reducing air pressure due to oxygen and water desorption. Local field emission measurements from the edges of the MoS$_2$ nanosheets are performed in high vacuum using a tip-shaped anode. It is demonstrated that the voltage applied to the Si substrate back-gate modulates the field emission current. Such a finding, that we attribute to gate-bias lowering of the MoS$_2$ electron affinity, enables a new field-effect transistor based on field emission.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors

A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We observe ambipolar conduction and hysteresis in the transfer curves of the PdSe2 material unprotected and as-exfoliated. We tune the ambipolar conduction and its hysteretic behavior in the air and pure nitrogen environments. The prevailing p-type transport observed at room pressure is reversibly turned into dominant n-type conduction by reducing the pressure, which can simultaneously suppress the hysteresis. The pressure control can be exploited to symmetrize and stabilize the transfer characteristic of the device as required in high-performance logic circuits. The transistor is immune from short channel effects but is affected by trap states with characteristic times in the order of minutes. The channel conductance, dramatically reduced by the electron irradiation during scanning electron microscope imaging, is restored after several minutes anneal at room temperature. The work paves the way toward the exploitation of PdSe2 in electronic devices by providing an experiment-based and deeper understanding of charge transport in PdSe2 transistors subjected to electrical stress and other external agents.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic behavior of the nanoparticle surface due to partial Sn segregation as well as the presence of a superficial Ge oxide. We report the observation of stable field emission current from the GeSn-nanoparticles. We prove that field emission can be enhanced by preventing GeSn nanoparticles oxidation or by breaking the oxide layer through electrical stress. Finally, we show that GeSn/p-Si junctions have a rectifying behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Side-gate leakage and field emission in all-graphene field effect transistors on SiO2/Si substrate

We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO2/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO2 up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at high voltages. We report a field-emission current density as high as 1uA/um between graphene flakes. These findings are essential for the miniaturization of atomically thin devices.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device

We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patterned on n-type Si wafer. The original layout, where nano-sized graphene/Si heterojunctions alternate to graphene areas exposed to the electric field of the Si substrate, which acts both as diode cathode and transistor gate, results in a two-terminal barristor with single-bias control of the Schottky barrier. The nanotip patterning favors light absorption, and the enhancement of the electric field at the tip apex improves photo-charge separation and enables internal gain by impact ionization. These features render the device a photodetector with responsivity (3 A/W for white LED light at 3 mW/cm2 intensity) almost an order of magnitude higher than commercial photodiodes. We extensively characterize the voltage and the temperature dependence of the device parameters and prove that the multi-junction approach does not add extra-inhomogeneity to the Schottky barrier height distribution. This work represents a significant advance in the realization of graphene/Si Schottky devices for optoelectronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Graphene field effect transistors with Niobium contacts and asymmetric transfer characteristics

We fabricate back-gated field effect transistors using Niobium electrodes on mechanically exfoliated monolayer graphene and perform electrical characterization in the pressure range from atmospheric down to 10-4 mbar. We study the effect of room temperature vacuum degassing and report asymmetric transfer characteristics with a resistance plateau in the n-branch. We show that weakly chemisorbed Nb acts as p-dopant on graphene and explain the transistor characteristics by Nb/graphene interaction with unpinned Fermi level at the interface.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Local characterization of ferromagnetic properties in ferromagnet/superconductor bilayer by Point Contact Andreev Reflection Spectroscopy

We realized point contact spectroscopy experiment on ferromagnet/superconductor bilayers. Differential conductance curves show several features that we explained within Bogoliubov-de Gennes formalism considering the presence of two interfaces in the normal-metal-tip/ferromagnet/superconductor device. We demonstrate that such configuration is suitable as local probe of the spin polarization and thickness of ferromagnetic layer, directly on bilayer areas. This is due to the high sensitivity of the Andreev surface states to the physical properties of the ferromagnetic interlayer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Charge transfer and trapping as origin of a double dip in the transfer characteristics of graphene based field-effect transistors

We discuss the origin of an additional dip other than the charge neutrality point observed in transfer characteristics of graphene-based field-effect transistors. The double-dip is proved to arise from charge transfer between graphene and metal electrodes, while charge storage at the graphene/SiO2 interface enhances it. Considering different Fermi energy from the neutrality point along the channel and partial charge pinning at the contacts, we propose a model which explains all features in gate voltage loops.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Andreev reflection in ferrimagnetic CoFe2O4/SrRuO3 spin filters

We have performed point contact spectroscopy measurements on a sample constituted by a metallic ferromagnetic oxide (SrRuO_3) bottom electrode and a tunnel ferrimagnetic (CoFe_2O_4) barrier. Andreev reflection is observed across the tunnel barrier. From the comparison of Andreev reflection in SrRuO3 and across the CoFe_2O_4 barrier we infer that the ferrimagnetic barrier has a spin filter efficiency not larger than +13%. The observation of a moderate and positive spin filtering is discussed in the context of the microstructure of the barriers and symmetry-related spin filtering effects.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Pairing state in the rutheno-cuprate superconductor RuSr2GdCu2O8: A point contact Andreev Reflection Spectroscopy study

The results of Point Contact Andreev Reflection Spectroscopy on polycrystalline RuSr$_2$GdCu$_2$O$_8$ pellets are presented. The wide variety of the measured spectra are all explained in terms of a modified BTK model considering a \emph{d-wave} symmetry of the superconducting order parameter. Remarkably low values of the energy gap $Δ=(2.8\pm 0.2)meV$ and of the $2Δ/k_BT_c\simeq 2$ ratio are inferred. From the temperature evolution of the $dI/dV$ vs $V$ characteristics we extract a sublinear temperature dependence of the superconducting energy gap. The magnetic field dependence of the conductance spectra at low temperatures is also reported. From the $Δ$ vs $H$ evolution, a critical magnetic field $H_{c_2}\simeq 30 T$ is inferred. To properly explain the curves showing gap-like features at higher voltages, we consider the formation of a Josephson junction in series with the Point Contact junction, as a consequence of the granularity of the sample.

0 citations0 reviewsNo code linkedOpen access