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Akira Satou

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other physics.app-ph physics.ins-det

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preprint2020arXiv

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

preprint2016arXiv

A Fitting Model for Asymmetric I-V Characteristics of Graphene Field-Effect Transistors for Extraction of Intrinsic Mobilities

A fitting model is developed for accounting the asymmetric ambipolarities in the I-V characteristics of graphene field-effect transistors (G-FETs) with doped channels, originating from the thermionic emission and interband tunneling at the junctions between the gated and access regions. Using the model, the gate-voltage-dependent intrinsic mobility as well as other intrinsic and extrinsic device parameters can be extracted. We apply it to a top-gated G-FET with a graphene channel grown on a SiC substrate and with SiN gate dielectric that we reported previously, and we demonstrate that it can excellently fit its asymmetric I-V characteristic.

preprint2014arXiv

Carrier-carrier scattering and negative dynamic conductivity in pumped graphene

We theoretically examine the effect of carrier-carrier scattering processes (electron-hole and electron-electron) on the intraband radiation absorption and their contribution to the net dynamic conductivity in optically or electrically pumped graphene. We demonstrate that the radiation absorption assisted by the carrier-carrier scattering can be stronger than the Drude absorption due to the carrier scattering on disorder. Since the intraband absorption of radiation effectively competes with its interband amplification, this can substantially affect the conditions of the negative dynamic conductivity in the pumped graphene and, hence, the interband terahertz and infrared lasing. We find the threshold values of the frequency and quasi-Fermi energy of nonequilibrium carriers corresponding to the onset of negative dynamic conductivity. The obtained results show that the effect of carrier-carrier scattering shifts the threshold frequency of the radiation amplification in pumped graphene to higher values. In particular, the negative dynamic conductivity is attainable at the frequencies above 6 THz in graphene on SiO2 substrates at room temperature. The threshold frequency can be decreased to markedly lower values in graphene structures with high-k substrates due to screening of the carrier-carrier scattering, particularly at lower temperatures.

preprint2011arXiv

Amplified Stimulated Terahertz Emission at Room temperature from Optically Pumped Graphene

Room temperature Terahertz stimulated emission and population inversion in optically pumped graphene is reported. We experimentally observe fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an exfoliated graphene on SiO2/Si substrate under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz beam generated by optical rectification in a nonlinear electro optical sensor. The time resolved electric field intensity originating from the coherent terahertz photon emission is electro-optically sampled in an total-reflection geometry. The comparison of terahertz electric fields intensities measured on SiO2/Si substrate and that one from graphene clearly indicate that graphene sheet act like an amplifying medium. The Emission spectra agrees relatively well the pumping photon spectrum and its dependency on the pumping power shows a threshold like behavior, testifying the occurrence of the negative conductivity in the THz spectral range and the population inversion. The threshold pumping intensity > 5*10^6 W/cm^2 is in a good agreement with simulations.

preprint2010arXiv

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Epitaxial Graphene Heterostructures

We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz (THz) beam generated by and synchronized with the pumping laser. The time-resolved electric-field intensity originating from the coherent terahertz photon emission is electro-optically sampled in total-reflection geometry. The Fourier spectrum from 1.8 to 5.2 THz agrees well the pumping photon spectrum. This result is attributed to amplified emission of THz radiation from the graphene sample stimulated by the THz probe beam, and provides evidence for the occurrence of negative dynamic conductivity in the terahertz spectral range.