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Deepika Yadav

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Published work

2 published item(s)

preprint2020arXiv

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

preprint2013arXiv

Effective doping of carbon nanotubes in phosphor and observation of bright electroluminescence by field enhanced hot electron injection

Present work focuses on the effective doping of multi-walled carbon nanotube (CNT) in the ZnS:Cu phosphor system and thereafter improvement in the optical performance of electroluminescent (EL) device due to the effect of increased local field. To facilitate doping of CNTs into the phosphor and decrease the operating voltage of the EL device, CNTs were shortened by milling and incorporated effectively using a flux assisted solid-state annealing reaction. Interestingly shorter the length of CNTs used, greater was the local field enhancement, brightness and efficiency observed for the EL devices. When the field is applied, adequate charge carriers are tunneled into the ZnS:Cu system through the tips of the CNTs by forming high energy hot spots thus enhancing the local field. The improved device characteristics are due to field enhancement without flowing of undesired current in the EL device and effective transfer of energy from hot spots to copper activator causing field-ionization. The detailed electrical characterization of the novel EL device along with its brightness measurements are also presented by considering the hot electron injection model.