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Taiichi Otsuji

Taiichi Otsuji contributes to research discovery and scholarly infrastructure.

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Published work

4 published item(s)

preprint2020arXiv

Room Temperature Amplification of Terahertz Radiation by Grating-Gate Graphene Structures

We report on experimental studies of terahertz (THz) radiation transmission through grating-gate graphene-channel transistor nanostructures and demonstrate room temperature THz radiation amplification stimulated by current-driven plasmon excitations. Specifically, with increase of the direct current (dc) under periodic charge density modulation, we observe a strong red shift of the resonant THz plasmon absorption, its complete bleaching, followed by the amplification and blue shift of the resonant plasmon frequency. Our results are, to the best of our knowledge, the first experimental observation of energy transfer from dc current to plasmons leading to THz amplification. We present a simple model allowing for the phenomenological description of the observed amplification phenomena. This model shows that in the presence of dc current the radiation-induced correction to dissipation is sensitive to the phase shift between THz oscillations of carrier density and drift velocity, and with increase of the current becomes negative, leading to amplification. The experimental results of this work as all obtained at room temperature, pave the way towards the new 2D plasmons based, voltage tuneable THz radiation amplifiers.

preprint2011arXiv

Amplified Stimulated Terahertz Emission at Room temperature from Optically Pumped Graphene

Room temperature Terahertz stimulated emission and population inversion in optically pumped graphene is reported. We experimentally observe fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an exfoliated graphene on SiO2/Si substrate under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz beam generated by optical rectification in a nonlinear electro optical sensor. The time resolved electric field intensity originating from the coherent terahertz photon emission is electro-optically sampled in an total-reflection geometry. The comparison of terahertz electric fields intensities measured on SiO2/Si substrate and that one from graphene clearly indicate that graphene sheet act like an amplifying medium. The Emission spectra agrees relatively well the pumping photon spectrum and its dependency on the pumping power shows a threshold like behavior, testifying the occurrence of the negative conductivity in the THz spectral range and the population inversion. The threshold pumping intensity > 5*10^6 W/cm^2 is in a good agreement with simulations.

preprint2010arXiv

Epitaxial Graphene on Silicon toward Graphene-Silicon Fusion Electronics

Graphene is a promising contender to succeed the throne of silicon in electronics. To this goal, large-scale epitaxial growth of graphene on substrates should be developed. Among various methods along this line, epitaxial growth of graphene on SiC substrates by thermal decomposition of surface layers has proved itself quite satisfactory both in quality and in process reliability. Even modulation of structural and hence electronic properties of graphene is possible by tuning the graphene/SiC interface structure. The challenges for this graphene-on-SiC technology, however, are the abdication of the well-established Si technologies and the high production cost of the SiC bulk crystals. Here, we demonstrate that formation of epitaxial graphene on silicon substrate is possible, by graphitizing epitaxial SiC thin films formed on silicon substrates. This graphene-on-silicon (GOS) method enables us to form a large-area film of well-ordered sp2 carbon networks on Si substrates and to fabricate electronic devices based on the structure.

preprint2010arXiv

Observation of Amplified Stimulated Terahertz Emission from Optically Pumped Epitaxial Graphene Heterostructures

We experimentally observe the fast relaxation and relatively slow recombination dynamics of photogenerated electrons/holes in an epitaxial graphene-on-Si heterostructure under pumping with a 1550-nm, 80-fs pulsed fiber laser beam and probing with the corresponding terahertz (THz) beam generated by and synchronized with the pumping laser. The time-resolved electric-field intensity originating from the coherent terahertz photon emission is electro-optically sampled in total-reflection geometry. The Fourier spectrum from 1.8 to 5.2 THz agrees well the pumping photon spectrum. This result is attributed to amplified emission of THz radiation from the graphene sample stimulated by the THz probe beam, and provides evidence for the occurrence of negative dynamic conductivity in the terahertz spectral range.