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Researcher profile

Abhijit Biswas

Abhijit Biswas contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elphysics.app-phphysics.optics

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Published work

6 published item(s)

preprint2022arXiv

Properties and device performance of BN thin films grown on GaN by pulsed laser deposition

Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Thin film growth of MAX phases as functional materials

Layered nanolaminate ternary carbides, nitrides and carbonitrides with general formula Mn+1AXn or MAX (n = 1, 2, or 3, M is an early transition metal, A is mostly group 13 or 14 element, and X is C and/or N) has revolutionized the world of nanomaterials, due to the coexistence of both ceramic and metallic nature, giving rise to exceptional mechanical, thermal, electrical, chemical properties and wide range of applications. Although several solid-state bulk synthesis methods have been developed to produce a variety of MAX phases, however, for certain applications, the growth of MAX phases, especially in its high-quality epitaxial thin films form is of increasing interest. Here, we summarize the progress made thus far in epitaxial growth and property evaluation of MAX phase thin films grown by various deposition techniques. We also address the important future research directions to be made in terms of thin-film growth. Overall, in the future, high-quality single-phase epitaxial thin film growth and engineering of chemically diverse MAX phases may open up interesting new avenues for next-generation technology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Enhanced electrocatalytic oxygen evolution activity in geometrically designed SrRuO3 thin films

For generation of sustainable, clean and highly efficient energy, the electrocatalytic oxygen evolution reaction represents an attractive platform, thus inviting immense research activities in recent years. However, designing the catalyst with enhanced electrocatalytic activity remains one of the major challenges. Here, we examined the oxygen evolution reaction activities of geometrically designed (with and without step-textured morphology) thin films of an electrocatalytically active correlated metallic SrRuO3 perovskite grown on c- and r-plane sapphire substrates. On c-plane sapphire, as compared to the uniform surface, the step-textured films endowed with active Ru-sites show remarkable decrease in the overpotential (25 mV). Interestingly, the behavior is opposite for the r-plane case, highlighting the significance of the active sites, in addition with the polar surface termination of selective crystal facets. Density functional theory calculation confirms the favorable energy reaction pathway for the active site dependent enhancement in OER. Our strategy might pave the way towards designing the surfaces of various oxide thin films for high performance energy conversion based devices.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Growth, Properties, and Applications of Pulsed Laser Deposited Nanolaminate Ti3AlC2 Thin Films

Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented sapphire substrates and, surprisingly, the films are found to be highly oriented along the (103) axis normal to the film plane, rather than the (000l) orientation. Multiple characterization techniques are employed to explore the structural and chemical quality of these films, the electrical and optical properties, and the device functionalities. The 80-nm thick Ti3AlC2 film is highly conducting at room temperature (resistivity of 50 micro ohm-cm), and a very-low-temperature coefficient of resistivity. The ultrathin (2 nm) Ti3AlC2 film has fairly good optical transparency and high conductivity at room temperature (sheet resistance of 735 ohm). Scanning tunneling microscopy reveals the metallic characteristics (with finite density of states at the Fermi level) at room temperature. The metal-semiconductor junction of the p-type Ti3AlC2 film and n-Si show the expected rectification (diode) characteristics, in contrast to the ohmic contact behavior in the case of Ti3AlC2 on p-Si. A triboelectric-nanogenerator-based touch-sensing device, comprising of the Ti3AlC2 film, shows a very impressive peak-to-peak open-circuit output voltage of 80 V. These observations reveal that pulsed laser deposited Ti3AlC2 thin films have excellent potential for applications in multiple domains, such as bottom electrodes, resistors for high-precision measurements, Schottky diodes, ohmic contacts, fairly transparent ultrathin conductors, and next-generation biomechanical touch sensors for energy harvesting.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Photonic Crystal Based Ultra-Sensitive Interferometric Sensor with Spatial Resolution up to 1 nm

We report a very high precision interferometric sensor with resolution up to ~λ/1024, exploiting hollow photonic bandgap waveguide-based geometry for the first time. Here sensing has been measured by a complete switching in the direction of the outgoing beam, owing to transverse momentum oscillation phenomena. Using a 1.32 μm source and core-width of 7.25 μm, a complete switching cycle is obtained even due to a small change of ~1 nm in the core-width. Using hollow-core photonic bandgap waveguide, Talbot effect, revivals of the initial phase, oscillation in the transverse momentum along with multi-mode interference served as the backbone of the design. The ultra-sensitive multi-mode interferometric sensor based on photonic crystals will certainly open up a paradigm shift in interferometer-based sensing technologies toward device-level applications in photonic sensing/switching and related precision measurement systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Third-order Exceptional Point and Successive Switching among Three States in a Degenerate Optical Microcavity

One of the most intriguing topological features of open systems is exhibiting exceptional point (EP) singularities. Apart from the widely explored second-order EPs (EP2s), the explorations of higher-order EPs in any system requires more complex topology, which is still a challenge. Here, we encounter a third-order EP (EP3) for the first time in a simple fabrication feasible gain-loss assisted optical microcavity. Using scattering-matrix formalism, we study the simultaneous interactions between three successive coupled states around two EP2s, which yield an EP3. Following an adiabatic parametric variation around the identified EP3, we present a robust successive-state-conversion mechanism among three coupled states. The proposed scheme indeed opens a unique platform to manipulate light in integrated devices.

0 citations0 reviewsNo code linkedOpen access