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Aaron Sternbach

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cond-mat.mes-hall cond-mat.str-el physics.optics

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preprint2020arXiv

Nano-photocurrent mapping of local electronic structure in twisted bilayer graphene

We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-thermoelectric effect. Consistent with the photocurrent study, infrared nano-imaging experiments reveal optical conductivity features dominated by twist-angle dependent interband transitions. Our results provide a fast and robust method for mapping the electronic structure of TBG and suggest that similar methods can be broadly applied to probe electronic inhomogeneities of moiré superlattices in other van der Waals heterostructures.

preprint2014arXiv

Shining light on transition metal oxides: unveiling the hidden Fermi Liquid

We use low energy optical spectroscopy and first principles LDA+DMFT calculations to test the hypothesis that the anomalous transport properties of strongly correlated metals originate in the strong temperature dependence of their underlying resilient quasiparticles. We express the resistivity in terms of an effective plasma frequency $ω_p^*$ and an effective scattering rate $ 1/τ^*_{tr}$. We show that in the archetypal correlated material V2O3, $ω_p^*$ increases with increasing temperature, while the plasma frequency from partial sum rule exhibits the opposite trend . $ 1/τ^*_{tr}$ has a more pronounced temperature dependence than the scattering rate obtained from the extended Drude analysis. The theoretical calculations of these quantities are in quantitative agreement with experiment. We conjecture that these are robust properties of all strongly correlated metals, and test it by carrying out a similar analysis on thin film NdNiO3 on LaAlO3 substrate.

preprint2012arXiv

Nonlinear terahertz metamaterials via field-enhanced carrier dynamics in GaAs

We demonstrate nonlinear metamaterial split ring resonators (SRRs) on GaAs at terahertz frequencies. For SRRs on doped GaAs films, incident terahertz radiation with peak fields of ~20 - 160 kV/cm drives intervalley scattering. This reduces the carrier mobility and enhances the SRR LC response due to a conductivity decrease in the doped thin film. Above ~160 kV/cm, electric field enhancement within the SRR gaps leads to efficient impact ionization, increasing the carrier density and the conductivity which, in turn, suppresses the SRR resonance. We demonstrate an increase of up to 10 orders of magnitude in the carrier density in the SRR gaps on semi-insulating GaAs substrate. Furthermore, we show that the effective permittivity can be swept from negative to positive values with increasing terahertz field strength in the impact ionization regime, enabling new possibilities for nonlinear metamaterials.