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Bor-Yuan Jiang

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cond-mat.mes-hall

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preprint2020arXiv

Nano-photocurrent mapping of local electronic structure in twisted bilayer graphene

We report a combined nano-photocurrent and infrared nanoscopy study of twisted bilayer graphene (TBG) enabling access to the local electronic phenomena at length scales as short as 20 nm. We show that the photocurrent changes sign at carrier densities tracking the local superlattice density of states of TBG. We use this property to identify domains of varying local twist angle by local photo-thermoelectric effect. Consistent with the photocurrent study, infrared nano-imaging experiments reveal optical conductivity features dominated by twist-angle dependent interband transitions. Our results provide a fast and robust method for mapping the electronic structure of TBG and suggest that similar methods can be broadly applied to probe electronic inhomogeneities of moiré superlattices in other van der Waals heterostructures.

preprint2016arXiv

Tunable plasmonic reflection by bound 1D electron states in a 2D Dirac metal

We show that surface plasmons of a two-dimensional Dirac metal such as graphene can be reflected by line-like perturbations hosting one-dimensional electron states. The reflection originates from a strong enhancement of the local optical conductivity caused by optical transitions involving these bound states. We propose that the bound states can be systematically created, controlled, and liquidated by an ultranarrow electrostatic gate. Using infrared nanoimaging, we obtain experimental evidence for the locally enhanced conductivity of graphene induced by a carbon nanotube gate, which supports this theoretical concept.

preprint2015arXiv

Electronic response of graphene to linelike charge perturbations

The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at intermediate distances x from the charged line. At larger x, twin p-n junctions may form if the external perturbation is repulsive for graphene charge carriers. The effect of such inhomogeneities on conductance and quantum capacitance of graphene is calculated. The results are relevant for transport properties of graphene grain boundaries and for local electrostatic control of graphene with ultrathin gates.