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A. Slobodskyy

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4 publications

preprint2011arXiv

Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence

Photoluminescence (PL) of the 50 nm Zn0.9Be0.05Mn0.05SeZn_{0.9}Be_{0.05}Mn_{0.05}Se/ dd nm Zn0.943Be0.057SeZn_{0.943}Be_{0.057}Se/ 2.5 nm ZnSeZnSe/ 30 nm Zn0.943Be0.057SeZn_{0.943}Be_{0.057}Se structures is investigated as a function of magnetic field (BB) and thickness (dd) of intermediate Zn0.943Be0.057SeZn_{0.943}Be_{0.057}Se nonmagnetic barrier between the Zn0.9Be0.05Mn0.05SeZn_{0.9}Be_{0.05}Mn_{0.05}Se semimagnetic barrier and ZnSeZnSe quantum well at the temperature 1.2 K. The rate of the shift of different PL bands of the structures under study is estimated in low and high magnetic fields. The causes of the shift rate increase under pass from low to high magnetic fields are interpreted. The peculiarities of the effect of the intermediate barrier on the luminescence properties of the structures are presented. It is shown that deformation of adjacent layers by the barrier plays a crucial role in the formation of these properties, especially in forming the MnMn complexes in the Zn0.9Be0.05Mn0.05SeZn_{0.9}Be_{0.05}Mn_{0.05}Se layer. The change of the band gap as well as of the donor and acceptor levels energies under the effect of biaxial compression of the Zn0.9Be0.05Mn0.05SeZn_{0.9}Be_{0.05}Mn_{0.05}Se layer by the Zn0.943Be0.057SeZn_{0.943}Be_{0.057}Se are estimated. It is concluded that the Zn0.943Be0.057SeZn_{0.943}Be_{0.057}Se intermediate barrier also appreciably changes the effect of giant Zeeman splitting of the semimagnetic Zn0.9Be0.05Mn0.05SeZn_{0.9}Be_{0.05}Mn_{0.05}Se barrier energy levels on the movement of the energy levels of ZnSeZnSe quantum well in a magnetic field and on polarization of the quantum well exciton emission.

preprint2010arXiv

Direct measurements of band gap grading in polycrystalline CIGS solar cells

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

preprint2010arXiv

In-depth analysis of CIGS film for solar cells, structural and optical characterization

Space-resolved X-ray diffraction measurements performed on gradient-etched CuInGaSe2 (CIGS) solar cells provide information about stress and texture depth profiles in the absorber layer. An important parameter for CIGS layer growth dynamics, the absorber thickness-dependent stress in the molybdenum back contact is analyzed. Texturing of grains and quality of the polycrystalline absorber layer are correlated with the intentional composition gradients (band gap grading). Band gap gradient is determined by space-resolved photoluminescence measurements and correlated with composition and strain profiles.

preprint2010arXiv

Local electrical characterization of resonant magnetization motion in a single ferromagnetic sub-micrometer particle in lateral geometry

In this article a detailed characterization of a magnetization motion in a single sub-micrometer and multi-terminal ferromagnetic structure in lateral geometry is performed in a GHz regime using direct DC characterization technique. We have shown applicability of the Stoner-Wohlfarth model to the magnetic nano-structure with large length to with ratio. Applying the model to experimental data we are able to extract relevant magnetization motion parameters and show a correlation between high frequency inductive currents and local magnetization. Additionally, DC voltage generated over the structure at the resonance, with external magnetic field under an angle to the shape anisotropy axis, is explained by the model.

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