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Direct measurements of band gap grading in polycrystalline CIGS solar cells

We present direct measurements of depth-resolved band gap variations of CuIn(1-x)Ga(x)Se2 thin-film solar cell absorbers. A new measurement technique combining parallel measurements of local thin-film interference and spectral photoluminescence was developed for this purpose. We find sample-dependent correlation parameters between measured band gap depth and composition profiles, and emphasize the importance of direct measurements. These results bring a quantitative insight into the electronic properties of the solar cells and open a new way to analyze parameters that determine the efficiency of solar cells.

preprint2010arXivOpen access
M. P. HeinrichZ-H. ZhangY. ZhangO. KiowskiM. PowallaU. LemmerA. Slobodskyy
cond-mat.mtrl-sciphysics.gen-phphysics.optics
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Open access7 authors3 topics
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M. P. HeinrichZ-H. ZhangY. ZhangO. KiowskiM. PowallaU. LemmerA. Slobodskyy

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