Researcher profile

A. S. Prokhorov

A. S. Prokhorov contributes to research discovery and scholarly infrastructure.

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Published work

8 published item(s)

preprint2013arXiv

Observation of an inter-sublattice exchange magnon in CoCr$_2$O$_4$ and analysis of magnetic ordering

We report on an investigation of optical properties of multiferroic CoCr$_{2}$O$_{4}$ at terahertz frequencies in magnetic fields up to 30 T. Below the ferrimagnetic transition (94 K), the terahertz response of CoCr$_{2}$O$_{4}$ is dominated by a magnon mode, which shows a steep magnetic-field dependence. We ascribe this mode to an exchange resonance between two magnetic sublattices with different $g$-factors. In the framework of a simple two-sublattice model (the sublattices are formed by Co$^{2+}$ and Cr$^{3+}$ ions), we find the inter-sublattice coupling constant, $λ= - (18 \pm 1)$ K, and trace the magnetization for each sublattice as a function of field. We show that the Curie temperature of the Cr$^{3+}$ sublattice, $Θ_{2}$ = $(49 \pm 2)$ K, coincides with the temperature range, where anomalies of the dielectric and magnetic properties of CoCr$_{2}$O$_{4}$ have been reported in literature.

preprint2012arXiv

Ge/Si(001) heterostructures with dense arrays of Ge quantum dots: morphology, defects, photo-emf spectra and terahertz conductivity

Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity decreases. We discuss possible mechanisms that can be responsible for the observed effects.

preprint2012arXiv

Ge/Si(001) Heterostructures with Quantum Dots: Formation, Defects, Photo-Electromotive Force and Terahertz Conductivity

Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.

preprint2011arXiv

Absorption of Terahertz Radiation in Ge/Si(001) Heterostructures with Quantum Dots

The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed.

preprint2011arXiv

B-T phase diagram of CoCr2O4 in magnetic fields up to 14 T

We have measured the magnetization and specific heat of multiferroic CoCr2O4 in magnetic fields up to 14 T. The high-field magnetization measurements indicate a new phase transition at T* = 5 - 6 K. The phase between T* and the lock-in transition at 15 K is characterized by magnetic irreversibility. At higher magnetic fields, the irreversibility increases. Specific-heat measurements confirm the transition at T*, and also show irreversible behavior. We construct a field-temperature phase diagram of CoCr2O4.

preprint2011arXiv

Polar modes in multiferroic Ba_2Mg_2Fe_(12)O_(22) hexagonal Y-type hexaferrite

Spectra of transmission and reflection coefficients of single crystalline Y-type hexaferrite Ba_(2)Mg_(2)Fe_(12)O_(22) are measured at Terahertz and infrared frequencies, 3 - 4500 c--1, and at temperatures 10 to 300 K, for polarization E prp c. Oscillator parameters of nineteen phonon lines allowed by the R3m crystal lattice symmetry are determined. Absorption lines assignment to vibrational modes of the lattice structural fragments is performed. Below the temperatures of 195 K and 50 K, corresponding to the zero field phase transitions to the proper screw and to the longitudinal-conical spin states, respectively, new absorption lines are discovered whose origin is assigned to the electric-dipole active magnetic excitations.

preprint2010arXiv

Terahertz conductivity of Si and of Ge/Si(001) heterostructures with quantum dots

With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5K-300K.

preprint2009arXiv

Origin of Low-Energy Excitations in Charge-Ordered Manganites

The low-energy excitations in the charge-ordered phase of polycrystalline La0.25Ca0.75MnO3 are explored by frequency-domain terahertz spectroscopy. In the frequency range from 4 cm^-1 to 700 cm^-1 (energies 0.4 meV to 90 meV) and at temperatures down to 5 K, we do not detect any feature that can be associated with the collective response of the spatially modulated charge continuum. In the antiferromagnetically ordered phase, broad absorption bands appear in the conductivity and permittivity spectra around 30 cm^-1 and 100 cm^-1 which are assigned to former acoustic phonons optically activated due to a fourfold superstructure in the crystal lattice. Our results indicate that characteristic energies of collective excitations of the charge-ordered phase in La0:25Ca0:75MnO3, if any, lie below 1 meV. At our lowest frequencies of only few wavenumbers a strong relaxation is observed above 100 K connected to the formation of the charge-ordered state.