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Published work
Application of the two-wavelength X-ray reflectometry to exploration of Ge/Si(001) hereostructures with dense chains of stacked Ge quantum dots is presented
Structural properties of the clean Si(001) surface obtained as a result of low-temperature (470--650C) pre-growth annealings of silicon wafers in a molecular-beam epitaxy chamber have been investigated. To decrease the cleaning temperature, a silicon surface was hydrogenated in the process of a preliminary chemical treatment in HF and NH_4F aqueous solutions. It has been shown that smooth surfaces composed by wide terraces separated by monoatomic steps can be obtained by dehydrogenation at the temperatures > 600C, whereas clean surfaces obtained at the temperatures < 600C are rough. It has been found that there exists a dependence of structural properties of clean surfaces on the temperature of hydrogen thermal desorption and the process of the preliminary chemical treatment. The frequency of detachment/attachment of Si dimers from/to the steps and effect of the Ehrlich-Schwoebel barrier on ad-dimer migration across steps have been found to be the most probable factors determining a degree of the resultant surface roughness.
Issues of Ge hut array formation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM studies of multilayer Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect films. Heteroepitaxial Si p-i-n-diodes with multilayer stacks of Ge/Si(001) quantum dot dense arrays built in intrinsic domains have been investigated and found to exhibit the photo-emf in a wide spectral range from 0.8 to 5 mcm. An effect of wide-band irradiation by infrared light on the photo-emf spectra has been observed. Photo-emf in different spectral ranges has been found to be differently affected by the wide-band irradiation. A significant increase in photo-emf is observed in the fundamental absorption range under the wide-band irradiation. The observed phenomena are explained in terms of positive and neutral charge states of the quantum dot layers and the Coulomb potential of the quantum dot ensemble. By using a coherent source spectrometer, first measurements of terahertz dynamical conductivity (absorptivity) spectra of Ge/Si(001) heterostructures were performed at frequencies 0.3-1.2 THz in the temperature interval from 300 to 5 K. The effective dynamical conductivity of the heterostructures with Ge quantum dots has been discovered to be significantly higher than that of the structure with the same amount of bulk germanium (not organized in an array of quantum dots). The excess conductivity is not observed in the structures with the Ge coverage less than 8 Å. When a Ge/Si(001) sample is cooled down the conductivity decreases. We discuss possible mechanisms that can be responsible for the observed effects.
Issues of Ge hut cluster nucleation and growth at low temperatures on the Ge/Si(001) wetting layer are discussed on the basis of explorations performed by high resolution STM and in-situ RHEED. Data of HRTEM investigations of Ge/Si heterostructures are presented with the focus on low-temperature formation of perfect multilayer films. Exploration of the photovoltaic effect in Si p--i--n-structures with Ge quantum dots allowed us to propose a new approach to designing of infrared detectors. First data on THz dynamical conductivity of Ge/Si(001) heterostructures in the temperature interval from 5 to 300 K and magnetic fields up to 6 T are reported.
Difference in nucleation of Ge quantum dots during Ge deposition at low (< 600C) and high (> 600C) temperatures on the Si(001) surface is studied by high resolution scanning tunneling microscopy. Two process resulting in appearance of {105}-faceted clusters on the Ge wetting layer have been observed at high temperatures: Pyramids have been observed to nucleate via the previously described formation of strictly determined structures, resembling blossoms, composed by 16 dimers grouped in pairs and chains of 4 dimes on tops of the wetting layer M x N patches, each on top of a separate single patch, just like it goes on at low temperatures; an alternative process consists in faceting of shapeless heaps of excess Ge atoms which arise in the vicinity of strong sinks of adatoms, such as pits or steps. The latter process has never been observed at low temperatures; it is typical only for the high-temperature deposition mode.
This communication covers investigation of the structural properties of surfaces of Si epitaxial layers deposited on different Si(001) vicinal substrates. We have shown processes of generation and growth of surface defects to depend on tilt direction of a Si(001) wafer and epilayer growth mode. We suppose these effects to be connected with mutual interaction of monoatomic steps.
The terahertz spectra of the dynamic conductivity and radiation absorption coefficient in germanium-silicon heterostructures with arrays of Ge hut clusters (quantum dots) have been measured for the first time in the frequency range of 0.3-1.2 THz at room temperature. It has been found that the effective dynamic conductivity and effective radiation absorption coefficient in the heterostructure due to the presence of germanium quantum dots in it are much larger than the respective quantities of both the bulk Ge single crystal and Ge/Si(001) without arrays of quantum dots. The possible microscopic mechanisms of the detected increase in the absorption in arrays of quantum dots have been discussed.
We report a direct observation of Ge hut nucleation on Si(001) during UHV MBE. The study was carried out using a UHV instrument coupling MBE chamber and STM which enables the sample study on atomic level at any stage of treatment. Si wafers were deoxidized by annealing at 925C. Ge was deposited by electron beam evaporation; the coverage was varied from 3 to 14 Å; the wafer temperature was 360C. The nuclei of pyramids and wedges were observed on the (MxN) wetting layer (WL) patches and found to have different structures. The atomic models of nuclei of both hut species have been built as well as the models of the growing clusters. The growth of huts of each species has been demonstrated to follow generic scenarios. The formation of the second atomic layer of the wedge results in rearrangement of its first layer. Its ridge structure does not repeat the nucleus. The pyramid grows without phase transitions. The structure of its vertex copies the nucleus. Transitions between hut species are impossible. The wedges contain point defects in the upper corners of the triangular faces and have preferential growth directions along the ridges. The derived structure of the {105} facet turned out to follow the PD model. Further growth of hut arrays results in domination of wedges, the density of pyramids exponentially drops. The heights of wedges are limited; no limitation of pyramid heights is observed. The second generation of huts arises at coverages >10 Å; new huts occupy the whole WL.
The Si(001) surface subjected to different treatments in ultrahigh vacuum molecular beam epitaxy chamber for SiO$_2$ film decomposition has been in situ investigated by reflected high energy electron diffraction (RHEED) and high resolution scanning tunnelling microscopy (STM). A transition between (2 x 1) and (4 x 4) RHEED patterns was observed. The (4 x 4) pattern arose at T <~600C during sample posttreatment cooling. The reconstruction was observed to be reversible. The c(8 x 8) structure was revealed by STM at room temperature on the same samples. The (4 x 4) patterns have been evidenced to be a manifestation of the c(8 x 8) surface structure in RHEED. The phase transition appearance has been found to depend on thermal treatment conditions and sample cooling rate.
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical terahertz-subterahertz coherent source BWO spectroscopy. The conductivity is found to be strongly enhanced compared with the conductivity of bulk germanium. Possible microscopic mechanisms responsible for the enhancement will be discussed. Application of BWO spectrometers for obtaining precise quantitative information on of dielectric properties at THz-subTHz frequencies of semiconducting layers and structures is demonstrated by presenting the temperature dependences of dielectric characteristics of a commercial silicon wafer at frequencies 0.3 to 1.2 THz and temperatures 5K-300K.
The phonon modes of self-assembled Ge/Si quantum dots grown by molecular-beam epitaxy in an apparatus integrated with a chamber of the scanning tunneling microscope into a single high-vacuum system are investigated using Raman spectroscopy. It is revealed that the Ge-Ge and Si-Ge vibrational modes are considerably enhanced upon excitation of excitons between the valence band $Λ_3$ and the conduction band $Λ_1$ (the E1 and E1 + $Δ_1$ transitions). This makes it possible to observe the Raman spectrum of very small amounts of germanium, such as one layer of quantum dots with a germanium layer thickness of 10 Å. The enhancement of these modes suggests a strong electron-phonon interaction of the vibrational modes with the E1 and E1 + $Δ_1$ excitons in the quantum dot. It is demonstrated that the frequency of the Ge-Ge mode decreases by 10 cm^-1 with a decrease in the thickness of the Ge layer from 10 to 6 Å due to the spatial-confinement effect. The optimum thickness of the Ge layer, for which the size dispersion of quantum dots is minimum, is determined.
We used Raman scattering for study the phonon modes of self-organized Ge/Si quantum dots, grown by a molecular-beam epitaxy method. It is revealed, that Ge-Ge and Si-Ge vibrational modes considerably intensify at excitation of exciton between the {Lambda}3 valence and {Lanbda}1 conduction bands (transitions E1 and E1+{Delta}1), that allows to observe Raman scattering spectrum from extremely small volumes of Ge, even from one layer of quantum dots with the layer thickness of ~ 10 A. It is shown that Si diffuses into the Ge quantum dots from the Si spacer layers forming Ge_xSi_{1-x} solid solution, and Si concentration was estimated. It is revealed, that the frequency of Ge-Ge mode decreases in 10 1/cm at decreasing of the Ge layer thickness from 10 up to 6 A as a result of phonon size confinement effect.
A clean Si(001) surface thermally purified in an ultrahigh vacuum molecular-beam epitaxy chamber has been investigated by means of scanning tunneling microscopy. The morphological peculiarities of the Si(001) surface have been explored in detail. The classification of the surface structure elements has been carried out, the dimensions of the elements have been measured, and the relative heights of the surface relief have been determined. A reconstruction of the Si(001) surface prepared in the molecular-beam epitaxy chamber has been found to be (8 x n). A model of the Si(001)-(8 x n) surface structure is proposed.