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Researcher profile

A. R. Champagne

A. R. Champagne contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-elquant-ph

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Published work

7 published item(s)

preprint2015arXiv

Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots

The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Wiedemann-Franz Relation and Thermal-transistor Effect in Suspended Graphene

We extract experimentally the electronic thermal conductivity, $K_{e}$, in suspended graphene which we dope using a back-gate electrode. We make use of two-point dc electron transport at low bias voltages and intermediate temperatures (50 - 160 K), where the electron and lattice temperatures are decoupled. The thermal conductivity is proportional to the charge conductivity times the temperature, confirming that the Wiedemann-Franz relation is obeyed in suspended graphene. We extract an estimate of the Lorenz coefficient as 1.1 to 1.7 $\times 10^{-8}$ W $Ω$K$^{-2}$. $K_e$ shows a transistor effect and can be tuned with the back-gate by more than a factor of 2 as the charge carrier density ranges from $\approx$ 0.5 to 1.8 $\times 10^{11}$cm$^{-2}$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Electronic Thermal Conductivity Measurements in Intrinsic Graphene

The electronic thermal conductivity of graphene and 2D Dirac materials is of fundamental interest and can play an important role in the performance of nano-scale devices. We report the electronic thermal conductivity, $K_{e}$, in suspended graphene in the nearly intrinsic regime over a temperature range of 20 to 300 K. We present a method to extract $K_{e}$ using two-point DC electron transport at low bias voltages, where the electron and lattice temperatures are decoupled. We find $K_e$ ranging from 0.5 to 11 W/m.K over the studied temperature range. The data are consistent with a model in which heat is carried by quasiparticles with the same mean free-path and velocity as graphene's charge carriers.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Few-hundred GHz Carbon Nanotube NEMS

We study 23 to 30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nano-electro-mechanical-systems (NEMS), we measure fundamental bending frequencies $f_{bend}\approx$ 75 - 280 GHz, and extract quality factors $Q \sim 10^{6}$. The NEMS' frequencies can be tuned by a factor of two with tension induced by mechanical breakjunctions actuated by an electrostatic force, or tension from bent suspended electrodes.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultra-short suspended single-wall carbon nanotube transistors

We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Mechanical Control of Spin States in Spin-1 Molecules and the Underscreened Kondo Effect

The ability to make electrical contact to single molecules creates opportunities to examine fundamental processes governing electron flow on the smallest possible length scales. We report experiments in which we controllably stretch individual cobalt complexes having spin S = 1, while simultaneously measuring current flow through the molecule. The molecule's spin states and magnetic anisotropy were manipulated in the absence of a magnetic field by modification of the molecular symmetry. This control enabled quantitative studies of the underscreened Kondo effect, in which conduction electrons only partially compensate the molecular spin. Our findings demonstrate a mechanism of spin control in single-molecule devices and establish that they can serve as model systems for making precision tests of correlated-electron theories.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Mechanically-adjustable and electrically-gated single-molecule transistors

We demonstrate a device geometry for single-molecule electronics experiments that combines both the ability to adjust the spacing between the electrodes mechanically and the ability to shift the energy levels in the molecule using a gate electrode. With the independent in-situ variations of molecular properties provided by these two experimental "knobs", we are able to achieve a much more detailed characterization of electron transport through the molecule than is possible with either technique separately. We illustrate the devices' performance using C60 molecules.

0 citations0 reviewsNo code linkedOpen access