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A. C. McRae

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cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

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preprint2015arXiv

Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots

The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials.

preprint2012arXiv

Few-hundred GHz Carbon Nanotube NEMS

We study 23 to 30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nano-electro-mechanical-systems (NEMS), we measure fundamental bending frequencies $f_{bend}\approx$ 75 - 280 GHz, and extract quality factors $Q \sim 10^{6}$. The NEMS' frequencies can be tuned by a factor of two with tension induced by mechanical breakjunctions actuated by an electrostatic force, or tension from bent suspended electrodes.

preprint2011arXiv

Ultra-short suspended single-wall carbon nanotube transistors

We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling.