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Researcher profile

S. Yigen

S. Yigen contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2015arXiv

Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots

The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Wiedemann-Franz Relation and Thermal-transistor Effect in Suspended Graphene

We extract experimentally the electronic thermal conductivity, $K_{e}$, in suspended graphene which we dope using a back-gate electrode. We make use of two-point dc electron transport at low bias voltages and intermediate temperatures (50 - 160 K), where the electron and lattice temperatures are decoupled. The thermal conductivity is proportional to the charge conductivity times the temperature, confirming that the Wiedemann-Franz relation is obeyed in suspended graphene. We extract an estimate of the Lorenz coefficient as 1.1 to 1.7 $\times 10^{-8}$ W $Ω$K$^{-2}$. $K_e$ shows a transistor effect and can be tuned with the back-gate by more than a factor of 2 as the charge carrier density ranges from $\approx$ 0.5 to 1.8 $\times 10^{11}$cm$^{-2}$.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ultra-short suspended single-wall carbon nanotube transistors

We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling.

0 citations0 reviewsNo code linkedOpen access