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A. Molina-Sánchez

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cond-mat.mtrl-sci cond-mat.mes-hall physics.app-ph physics.optics

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preprint2021arXiv

Out-of-plane emission of trions in monolayer WSe2 revealed by whispering gallery modes of dielectric microresonators

The manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require from the so elusive out-of-plane photon sources to achieve an efficient coupling of radiated light into planar devices. Here we propose a versatile spectroscopic method that enables the identification of the out-of-plane component of dipoles. The method is based on the selective coupling of light emitted by in-plane and out-of-plane dipoles to the whispering gallery modes of spherical dielectric microresonators, in close contact to them. We have applied this method to demonstrate the existence of dipoles with an out-of-plane orientation in monolayer WSe2 at room temperature. Micro-photoluminescent measurements, numerical simulations based on finite element methods, and ab-initio calculations have identified trions as the source responsible for this out-of-plane emission, opening new routes for realizing on-chip integrated systems with applications in information processing and quantum communications.

preprint2021arXiv

Phonons in MoSe2/WSe2 van der Waals heterobilayer

We report first-principles calculations of the structural and vibrational properties of the synthesized two-dimensional van der Waals heterostructures formed by single-layers dichalcogenides MoSe2 and WSe2. We show that, when combining these systems in a periodic two-dimensional heterostructures, the intrinsic phonon characteristics of the free-standing constituents are to a large extent preserved but, furthermore, exhibit shear and breathing phonon modes that are not present in the individual building blocks. These peculiar modes depend strongly on the weak vdW forces and has a great contibution to the thermal properties of the layered materials. Besides these features, the departure of flexural modes of heterobilayer from the ones of its monolayer parents are also found.

preprint2019arXiv

Strongly coupled coherent phonons in single-layer MoS$_2$

We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range.

preprint2013arXiv

LDA+U and tight-binding electronic structure of InN nanowires

In this paper we employ a combined {\it ab initio} and tight-binding approach to obtain the electronic and optical properties of hydrogenated InN nanowires. We first discuss InN band structure for the wurtzite structure calculated at the LDA+U level and use this information to extract the parameters needed for an empirical tight-binging implementation. These parameters are then employed to calculate the electronic and optical properties of InN nanowires in a diameter range that would not be affordable by {\it ab initio} techniques. The reliability of the large nanowires results is assessed by explicitly comparing the electronic structure of a small diameter wire studied both at LDA+U and tight-binding level.

preprint2013arXiv

Screening of electron-phonon coupling in graphene on Ir(111)

The phonon dispersion of graphene on Ir(111) has been determined by means of angle-resolved inelastic electron scattering and density functional calculations. Kohn anomalies of the highest optical-phonon branches are observed at the $Γ$ and K point of the surface Brillouin zone. At K the Kohn anomaly is weaker than observed from pristine graphene and graphite. This observation is rationalized in terms of a decrease of the electron-phonon coupling due to screening of graphene electron correlations by the metal substrate.

preprint2012arXiv

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.

preprint2011arXiv

Phonons in single and few-layer MoS2 and WS2

We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et. al., ACS Nano Vol. 4, 2695 (2010)] we find that the A1g mode increases in frequency with increasing layer number while the E2g mode decreases. We explain this decrease by an enhancement of the dielectric screening of the long-range Coulomb interaction between the effective charges with growing number of layers. This decrease in the long-range part over-compensates the increase of the short-range interaction due to the weak inter-layer interaction.