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L. Wirtz

L. Wirtz appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.otherphysics.app-ph

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Published work

13 published item(s)

preprint2022arXiv

Raman imaging of twist angle variations in twisted bilayer graphene at intermediate angles

Van der Waals layered materials with well-defined twist angles between the crystal lattices of individual layers have attracted increasing attention due to the emergence of unexpected material properties. As many properties critically depend on the exact twist angle and its spatial homogeneity, there is a need for a fast and non-invasive characterization technique of the local twist angle, to be applied preferably right after stacking. We demonstrate that confocal Raman spectroscopy can be utilized to spatially map the twist angle in stacked bilayer graphene for angles between 6.5° and 8° when using a green excitation laser. The twist angles can directly be extracted from the moiré superlattice-activated Raman scattering process of the transverse acoustic (TA) phonon mode. Furthermore, we show that the width of the TA Raman peak contains valuable information on spatial twist angle variations on length scales below the laser spot size of ~ 500 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strongly coupled coherent phonons in single-layer MoS$_2$

We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ab-initio perspective on the Mollwo-Ivey relation for F-centers in alkali halides

We revisit the well-known Mollwo-Ivey relation that describes the "universal" dependence of the absorption energies of F-type color centers on the lattice constant $a$ of the alkali-halide crystals, $E_{\mbox{abs}}\propto a^{-n}.$ We perform both state-of-the-art ab-initio Quantum Chemistry and post-DFT calculations of F-center absorption spectra. By "tuning" independently the lattice constant and the atomic species we show that the scaling of the lattice constant alone (keeping the elements fixed) would yield $n=2$ in agreement with the "particle-in-the-box" model. Keeping the lattice constant fixed and changing the atomic species enables us to quantify the ion-size effects which are shown to be responsible for the exponent $n \approx 1.8$.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride

Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope around the kinks in the highest optical branch is proportional to the electron-phonon coupling. Here, we present a combined theoretical and experimental study of the influence of the dielectric substrate on the vibrational properties of graphene. We show that screening by the dielectric substrate reduces the electron-phonon coupling at the high-symmetry point K and leads to an up-shift of the Raman 2D-line. This results in the observation of a Kohn anomaly that can be tuned by screening. The exact position of the 2D-line can thus be taken also as a signature for changes in the (electron-phonon limited) conductivity of graphene.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Manifestation of charged and strained graphene layers in the Raman response of graphite intercalation compounds

We present detailed multi frequency resonant Raman measurements of potassium graphite intercalation compounds (GICs). From a well controlled and consecutive in-situ intercalation and high temperature de-intercalation approach the response of each stage up to stage VI is identified. The positions of the G and 2D lines as a function of staging depend on the charge transfer from K to the graphite layers and on the lattice expansion. Ab-initio calculations of the density and the electronic band-structure demonstrate that most (but not all) of the transferred charge remains on the graphene sheets adjacent to the intercalant layers. This leads to an electronic decoupling of these "outer" layers from the ones sandwiched between carbon layers and consequently to a decoupling of the corresponding Raman spectra. Thus higher stage GICs offer the possibility to measure the vibrations of single, double, and multi-layer graphene under conditions of biaxial strain. This strain can additionally be correlated to the in-plane lattice constants of GICs determined by x-ray diffraction. The outcome of this study demonstrates that Raman spectroscopy is a very powerful tool to identify local internal strain in pristine and weakly charged single and few-layer graphene and their composites, yielding even absolute lattice constants.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Screening of electron-phonon coupling in graphene on Ir(111)

The phonon dispersion of graphene on Ir(111) has been determined by means of angle-resolved inelastic electron scattering and density functional calculations. Kohn anomalies of the highest optical-phonon branches are observed at the $Γ$ and K point of the surface Brillouin zone. At K the Kohn anomaly is weaker than observed from pristine graphene and graphite. This observation is rationalized in terms of a decrease of the electron-phonon coupling due to screening of graphene electron correlations by the metal substrate.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

We report a Raman study of the so-called buffer layer with $(6\sqrt3\times6\sqrt3)R30^{\circ}$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a nonvanishing signal in the Raman spectrum at frequencies in the range of the D- and G-band of graphene and discuss its shape and intensity. Ab-initio phonon calculations reveal that these features can be attributed to the vibrational density of states of the buffer-layer.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Coupling of excitons and defect states in boron-nitride nanostructures

The signature of defects in the optical spectra of hexagonal boron nitride (BN) is investigated using many body perturbation theory. A single BN-sheet serves as a model for different layered BN- nanostructures and crystals. In the sheet we embed prototypical defects such as a substitutional impurity, isolated Boron and Nitrogen vacancies, and the di-vacancy. Transitions between the deep defect levels and extended states produce characteristic excitation bands that should be responsible for the emission band around 4 eV, observed in luminescence experiments. In addition, defect bound excitons occur that are consistently treated in our ab initio approach along with the "free" exciton. For defects in strong concentration, the co-existence of both bound and free excitons adds sub-structure to the main exciton peak and provides an explanation for the corresponding feature in cathodo and photo-luminescence spectra.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Phonons in single and few-layer MoS2 and WS2

We report ab-initio calculations of the phonon dispersion relations of the single-layer and bulk dichalcogenides MoS2 and WS2. We explore in detail the behavior of the Raman active modes, A1g and E2g as a function of the number of layers. In agreement with recent Raman spectroscopy measurements [C. Lee et. al., ACS Nano Vol. 4, 2695 (2010)] we find that the A1g mode increases in frequency with increasing layer number while the E2g mode decreases. We explain this decrease by an enhancement of the dielectric screening of the long-range Coulomb interaction between the effective charges with growing number of layers. This decrease in the long-range part over-compensates the increase of the short-range interaction due to the weak inter-layer interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Anisotropic excitonic effects in the energy loss function of hexagonal boron nitride

We demonstrate that the valence energy-loss function of hexagonal boron nitride (hBN) displays a strong anisotropy in shape, excitation energy and dispersion for momentum transfer q parallel or perpendicular to the hBN layers. This is manifested by e.g. an energy shift of 0.7 eV that cannot be captured by single-particle approaches and is a demonstration of a strong anisotropy in the two-body electron-hole interaction. Furthermore, for in-plane directions of q we observe a splitting of the -plasmon in the M direction that is absent in the K direction and this can be traced back to band-structure effects.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Phonon surface mapping of graphite: disentangling quasi--degenerate phonon dispersions

The two-dimensional mapping of the phonon dispersions around the $K$ point of graphite by inelastic x-ray scattering is provided. The present work resolves the longstanding issue related to the correct assignment of transverse and longitudinal phonon branches at $K$. We observe an almost degeneracy of the three TO, LA and LO derived phonon branches and a strong phonon trigonal warping. Correlation effects renormalize the Kohn anomaly of the TO mode, which exhibits a trigonal warping effect opposite to that of the electronic band structure. We determined the electron--phonon coupling constant to be 166$\rm(eV/Å)^2$ in excellent agreement to $GW$ calculations. These results are fundamental for understanding angle-resolved photoemission, double--resonance Raman and transport measurements of graphene based systems.

0 citations0 reviewsNo code linkedOpen access
preprint2007arXiv

Electron-electron correlation in graphite

The full three dimensional dispersion of the pi-bands, Fermi velocities and effective masses are measured with angle resolved photoemission spectroscopy and compared to first-principles calculations. The band structure by density-functional theory strongly underestimates the slope of the bands and the trigonal warping effect. Including electron-electron calculation on the level of the GW approximation, however, yields remarkable agreement in the vicinity of the Fermi level. This demonstrates the breakdown of the independent electron picture in semi-metallic graphite and points towards a pronounced role of electron correlation for the interpretation of transport experiments and double-resonant Raman scattering for a wide range of carbon based materials.

0 citations0 reviewsNo code linkedOpen access
preprint2006arXiv

Spatially Resolved Raman Spectroscopy of Single- and Few-Layer Graphene

We present Raman spectroscopy measurements on single- and few-layer graphene flakes. Using a scanning confocal approach we collect spectral data with spatial resolution, which allows us to directly compare Raman images with scanning force micrographs. Single-layer graphene can be distinguished from double- and few-layer by the width of the D' line: the single peak for single-layer graphene splits into different peaks for the double-layer. These findings are explained using the double-resonant Raman model based on ab-initio calculations of the electronic structure and of the phonon dispersion. We investigate the D line intensity and find no defects within the flake. A finite D line response originating from the edges can be attributed either to defects or to the breakdown of translational symmetry.

0 citations0 reviewsNo code linkedOpen access