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A. C. Ferrari

A. C. Ferrari appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-sciphysics.opticsphysics.app-phcond-mat.other

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Published work

47 published item(s)

preprint2022arXiv

Terahertz photodetection in scalable single-layer-graphene and hexagonal boron nitride heterostructures

The unique optoelectronic properties of single layer graphene (SLG) are ideal for the development of photonic devices across a broad range of frequencies, from X-rays to microwaves. In the terahertz (THz) range (0.1-10 THz frequency) this has led to the development of optical modulators, non-linear sources, and photodetectors, with state-of-the-art performances. A key challenge is the integration of SLG-based active elements with pre-existing technological platforms in a scalable way, while maintaining performance level unperturbed. Here, we report on the development of room temperature THz detection in large-area SLG, grown by chemical vapor deposition (CVD), integrated in antenna-coupled field effect transistors. We selectively activate the photo-thermoelectric detection dynamics, and we employ different dielectric configurations on SLG on Al2O3 with and without large-area CVD hBN capping to investigate their effect on SLG thermoelectric properties underpinning photodetection. With these scalable architectures, response times ~5ns and noise equivalent powers ~1nWHz-1/2 are achieved under zero-bias operation. This shows the feasibility of scalable, large-area, layered materials heterostructures for THz detection.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Non-equilibrium Band Broadening, Gap Renormalization and Band Inversion in Black Phosphorus

Black phosphorous (BP) is a layered semiconductor with high carrier mobility, anisotropic optical response and wide bandgap tunability. In view of its application in optoelectronic devices, understanding transient photo-induced effects is crucial. Here, we investigate by time- and angle-resolved photoemission spectroscopy BP in its pristine state and in the presence of Stark splitting, chemically induced by Cs ad-sorption. We show that photo-injected carriers trigger bandgap renormalization and a concurrent valence band attening caused by Pauli blocking. In the biased sample, photoexcitation leads to a long-lived (ns) surface photovoltage of few hundreds mV that counterbalances the Cs-induced surface band bending. This allows us to disentangle bulk from surface electronic states and to clarify the mechanism underlying the band inversion observed in bulk samples.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Graphene Overcoats for Ultra-High Storage Density Magnetic Media

Hard disk drives (HDDs) are used as secondary storage in a number of digital electronic devices owing to low cost ($<$0.1\$/GB at 2016 prices) and large data storage capacity (10TB with a 3.5 inch HDD). Due to the exponentially increasing amount of data, there is a need to increase areal storage densities beyond$\sim$1Tb/in$^2$. This requires the thickness of carbon overcoats (COCs) to be$<$2nm. Friction, wear, corrosion, and thermal stability are critical concerns$<$2nm, where most of the protective properties of current COCs are lost. This limits current technology and restricts COC integration with heat assisted magnetic recording technology (HAMR), since this also requires laser irradiation stability. Here we show that graphene-based overcoats can overcome all these limitations. 2-4 layers of graphene enable two-fold reduction in friction and provide better corrosion and wear than state-of-the-art COCs. A single graphene layer is enough to reduce corrosion$\sim$2.5 times. We also show that graphene can withstand HAMR conditions. Thus, graphene-based overcoats can enable ultrahigh areal density HDDs$>$10Tb/in$^2$.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Hot electrons modulation of third harmonic generation in graphene

Hot electrons dominate the ultrafast ($\sim$fs-ps) optical and electronic properties of metals and semiconductors and they are exploited in a variety of applications including photovoltaics and photodetection. We perform power-dependent third harmonic generation measurements on gated single-layer graphene and detect a significant deviation from the cubic power-law expected for a third harmonic generation process. We assign this to the presence of hot electrons. Our results indicate that the performance of nonlinear photonics devices based on graphene, such as optical modulators and frequency converters, can be affected by changes in the electronic temperature, which might occur due to increase of absorbed optical power or Joule heating.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Screen-printed and spray coated graphene-based RFID transponders

We report Ultra-High-Frequency (UHF, 800MHz-1GHz) Radio Frequency Identification (RFID) transponders consisting of printed dipole antennas combined with RFID microchips. These are fabricated on Kapton via screen printing and on paper via spray coating, using inks obtained via microfluidization of graphite. We introduce a hybrid antenna structure, where an Al loop (small compared to the overall size of the antenna) is connected to a microchip with the double function of matching the impedances of antenna and microchip and avoiding bonding between exfoliated graphite and chip. The transponders have reading distance~11m at UHF RFID frequencies, larger than previously reported for graphene-based RFID and comparable with commercial transponders based on metallic antennas.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Strongly coupled coherent phonons in single-layer MoS$_2$

We present a transient absorption setup combining broadband detection over the visible-UV range with high temporal resolution ($\sim$20fs) which is ideally suited to trigger and detect vibrational coherences in different classes of materials. We generate and detect coherent phonons (CPs) in single layer (1L) MoS$_2$, as a representative semiconducting 1L-transition metal dichalcogenide (TMD), where the confined dynamical interaction between excitons and phonons is unexplored. The coherent oscillatory motion of the out-of-plane $A'_{1}$ phonons, triggered by the ultrashort laser pulses, dynamically modulates the excitonic resonances on a timescale of few tens fs. We observe an enhancement by almost two orders of magnitude of the CP amplitude when detected in resonance with the C exciton peak, combined with a resonant enhancement of CP generation efficiency. Ab initio calculations of the change in 1L-MoS$_2$ band structure induced by the $A'_{1}$ phonon displacement confirm a strong coupling with the C exciton. The resonant behavior of the CP amplitude follows the same spectral profile of the calculated Raman susceptibility tensor. This demonstrates that CP excitation in 1L-MoS$_2$ can be described as a Raman-like scattering process. These results explain the CP generation process in 1L-TMDs, paving the way for coherent all-optical control of excitons in layered materials in the THz frequency range.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Waveguide-integrated, plasmonic enhanced graphene photodetectors

We present a micrometer scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed and optimized to directly generate a photovoltage and has an external responsivity~12.2V/W with a 3dB bandwidth~42GHz. We utilize Au split-gates with a$\sim$100nm gap to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele and datacom modules

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Tetrahedral amorphous carbon resistive memories with graphene-based electrodes

Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent ta-C resistive memory devices with graphene-based electrodes. Our devices show ON/OFF resistance ratios$\sim$4x$10^5$, ten times higher than with metal electrodes, with no increase in switching power, and low power density$\sim$14$μ$W/$μ$m$^2$. We attribute this to a suppressed tunneling current due to the low density of states of graphene near the Dirac point, consistent with the current-voltage characteristics derived from a quantum point contact model. Our devices also have multiple resistive states. This allows storing more than one bit per cell. This can be exploited in a range of signal processing/computing-type operations, such as implementing logic, providing synaptic and neuron-like mimics, and performing analogue signal processing in non-von-Neumann architectures

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Wavelength tunable soliton rains in a nanotube-mode locked Tm-doped fiber laser

We report soliton rains in a tuneable Tm-doped fiber laser mode locked by carbon nanotubes. We also detect their second- and third-harmonic. We achieve a tuneability of over 56nm, from 1877 to 1933nm, by introducing a polarization-maintaining isolator and two in-line polarization controllers. This makes our system promising as a tuneable filter for ultrafast spectroscopy.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Surface plasmon polariton graphene photodetectors

The combination of plasmonic nanoparticles and graphene enhances the responsivity and spectral selectivity of graphene-based photodetectors. However, the small area of the metal-graphene junction, where the induced electron-hole pairs separate, limits the photoactive region to sub-micron length scales. Here, we couple graphene with a plasmonic grating and exploit the resulting surface plasmon polaritons to deliver the collected photons to the junction region of a metal-graphene-metal photodetector. This results into a 400% enhancement of responsivity and a 1000% increase in photoactive length, combined with tunable spectral selectivity. The interference between surface plasmon polaritons and the incident wave introduces new functionalities, such as light flux attraction or repulsion from the contact edges, enabling the tailored design of the photodetector's spectral response. This architecture can also be used for surface plasmon bio-sensing with direct-electric- readout, eliminating the need of complicated optics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Transport Conductivity of Graphene at RF and Microwave Frequencies

We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part~0. The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ultrafast pseudospin dynamics in graphene

Interband optical transitions in graphene are subject to pseudospin selection rules. Impulsive excitation with linearly polarized light generates an anisotropic photocarrier occupation in momentum space that evolves at timescales shorter than 100fs. Here, we investigate the evolution of non-equilibrium charges towards an isotropic distribution by means of fluence-dependent ultrafast spectroscopy and develop an analytical model able to quantify the isotropization process. In contrast to conventional semiconductors, the isotropization is governed by optical phonon emission, rather than electron-electron scattering, which nevertheless contributes in shaping the anisotropic photocarrier occupation within the first few fs.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Valley and spin dynamics in monolayer MoS$_{2}$

Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers of transition metal dichalcogenides (TMDs) the lack of inversion symmetry, combined with a large spin-orbit interaction, leads to a conduction (valence) band with different spin-polarized minima (maxima) having equal energies. This offers the opportunity to manipulate information at the level of the charge (electrons or holes), spin (up or down) and crystal momentum (valley). Any implementation of these concepts, however, needs to consider the robustness of such degrees of freedom, which are deeply intertwined. Here we address the spin and valley relaxation dynamics of both electrons and holes with a combination of ultrafast optical spectroscopy techniques, and determine the individual characteristic relaxation times of charge, spin and valley in a MoS$_{2}$ monolayer. These results lay the foundations for understanding the mechanisms of spin and valley polarization loss in two-dimensional TMDs: spin/valley polarizations survive almost two-orders of magnitude longer for holes, where spin and valley dynamics are interlocked, than for electrons, where these degrees of freedom are decoupled. This may lead to novel approaches for the integration of materials with large spin-orbit in robust spintronic/valleytronic platforms.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Doping dependence of the Raman spectrum of defected graphene

We investigate the evolution of the Raman spectrum of defected graphene as a function of doping. Polymer electrolyte gating allows us to move the Fermi level up to 0.7eV, as monitored by \textit{in-situ} Hall-effect measurements. For a given number of defects, we find that the intensities of the D and D' peaks decrease with increasing doping. We assign this to an increased total scattering rate of the photoexcited electrons and holes, due to the doping-dependent strength of electron-electron scattering. We present a general relation between D peak intensity and defects valid for any doping level

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Electron-hole pairing in graphene-GaAs heterostructures

Vertical heterostructures combining different layered materials offer novel opportunities for applications and fundamental studies of collective behavior driven by inter-layer Coulomb coupling. Here we report heterostructures comprising a single-layer (or bilayer) graphene carrying a fluid of massless (massive) chiral carriers, and a quantum well created in GaAs 31.5 nm below the surface, supporting a high-mobility two-dimensional electron gas. These are a new class of double-layer devices composed of spatially-separated electron and hole fluids. We find that the Coulomb drag resistivity significantly increases for temperatures below 5-10 K, following a logarithmic law. This anomalous behavior is a signature of the onset of strong inter-layer correlations, compatible with the formation of a condensate of permanent excitons. The ability to induce strongly-correlated electron-hole states paves the way for the realization of coherent circuits with minimal dissipation and nanodevices including analog-to-digital converters and topologically protected quantum bits.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Photo-thermoelectric and photoelectric contributions to light detection in metal-graphene-metal photodetectors

Graphene's high mobility and Fermi velocity, combined with its constant light absorption in the visible to far-infrared range, make it an ideal material to fabricate high-speed and ultra-broadband photodetectors. However, the precise mechanism of photodetection is still debated. Here, we report wavelength and polarization dependent measurements of metal-graphene-metal photodetectors. This allows us to quantify and control the relative contributions of both photo-thermo- and photoelectric effects, both contributing to the overall photoresponse. This paves the way for a more efficient photodetector design for ultra-fast operating speeds.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Effects of Electron-Electron Interactions on Electronic Raman Scattering of Graphite in High Magnetic Fields

We report the observation of strongly temperature-dependent, asymmetric spectral lines in electronic Raman scattering spectra of graphite in a high magnetic field up to 45 T applied along the c-axis. The magnetic field quantizes the in-plane motion, while the out-of-plane motion remains free, effectively reducing the system dimension from three to one. Optically created electron-hole pairs interact with, or shake up, the one-dimensional Fermi sea in the lowest Landau subbands. Based on the Tomonaga-Luttinger liquid theory, we show that interaction effects modify the van Hove singularity to the form $(ω-Δ)^{2α-1/2}$ at zero temperature. At finite temperature, we predict a thermal broadening factor that increases linearly with the temperature. Our model reproduces the observed temperature-dependent line-shape, determining $α$ to be $\sim$0.05 at 40 T.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Measurement of Filling-Factor-Dependent Magnetophonon Resonances in Graphene Using Raman Spectroscopy

We perform polarization-resolved Raman spectroscopy on graphene in magnetic fields up to 45T. This reveals a filling-factor-dependent, multi-component anticrossing structure of the Raman G peak, resulting from magnetophonon resonances between magnetoexcitons and E$_{2g}$ phonons. This is explained with a model of Raman scattering taking into account the effects of spatially inhomogeneous carrier densities and strain. Random fluctuations of strain-induced pseudo-magnetic fields lead to increased scattering intensity inside the anti-crossing gap, consistent with the experiment.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

1.5 GHz Pulse Generation From a Monolithic Waveguide Laser With a Graphene-Film Saturable Output Coupler

We fabricate a saturable absorber mirror by coating a graphene film on an output coupler mirror. This is then used to obtain Q-switched mode-locking from a diode pumped linear cavity waveguide laser inscribed in Ytterbium-doped Bismuthate Glass, with high slope and optical conversion efficiencies. The laser produces mode-locked pulses at 1039nm, with 1.5GHz repetition rate at an average 202mW output power. This performance is due to the combination of the graphene saturable absorber with the high quality laser glass.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

2μm Solid-State Laser Mode-locked By Single-Layer Graphene

We report a 2μm ultrafast solid-state Tm:Lu2O3 laser, mode-locked by single-layer graphene, generating transform-limited~410fs pulses, with a spectral width~11.1nm at 2067nm. The maximum average output power is 270mW, at a pulse repetition frequency of 110MHz. This is a convenient high-power transform-limited laser at 2μm for various applications, such as laser surgery and material processing.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Graphene field effect transistors as room-temperature Terahertz detectors

The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6]. Owing to its high carrier mobility, gapless spectrum, and frequency-independent absorption coefficient, it has been recognized as a very promising element for the development of detectors and modulators operating in the Terahertz (THz) region of the electromagnetic spectrum (wavelengths in the hundreds of micrometers range), which is still severely lacking in terms of solid-state devices. Here we demonstrate efficient THz detectors based on antenna-coupled graphene field-effect transistors (FETs). These exploit the non-linear FET response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature (RT) operation at 0.3 THz, with noise equivalent power (NEP) levels < 30 nW/Hz^(1/2), showing that our devices are well beyond a proof-of-concept phase and can already be used in a realistic setting, enabling large area, fast imaging of macroscopic samples.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetophonon resonance in graphite: High-field Raman measurements and electron-phonon coupling contributions

We perform Raman scattering experiments on natural graphite in magnetic fields up to 45 T, observing a series of peaks due to interband electronic excitations over a much broader magnetic field range than previously reported. We also explore electron-phonon coupling in graphite via magnetophonon resonances. The Raman G peak shifts and splits as a function of magnetic field, due to the magnetically tuned coupling of the E2g optical phonons with the K- and H-point inter-Landau-level excitations. The analysis of the observed anticrossing behavior allows us to determine the electron-phonon coupling for both K- and H-point carriers. In the highest field range (>35 T) the G peak narrows due to suppression of electron-phonon interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Production, Processing and Placement of Graphene and Two Dimensional Crystals

Graphene is at the centre of an ever growing research effort due to its unique properties, interesting for both fundamental science and applications. A key requirement for applications is the development of industrial-scale, reliable, inexpensive production processes. Here we review the state of the art of graphene preparation, production, placement and handling. Graphene is just the first of a new class of two dimensional materials, derived from layered bulk crystals. Most of the approaches used for graphene can be extended to these crystals, accelerating their journey towards applications.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Tm-doped fiber laser mode-locked by graphene-polymer composite

We demonstrate mode-locking of a thulium-doped fiber laser operating at 1.94μm, using a graphene-based saturable absorber. The laser outputs 3.6ps pulses, with~0.4nJ energy and an amplitude fluctuation~0.5%, at 6.46MHz. This is a simple, low-cost, stable and convenient laser oscillator for applications where eye-safe and low-photon-energy light sources are required, such as sensing and biomedical diagnostics

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Ultrafast collinear scattering and carrier multiplication in graphene

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale to a hot Fermi-Dirac distribution, that subsequently cools via phonon emission. Here we combine pump-probe spectroscopy, featuring extreme temporal resolution and broad spectral coverage, with a microscopic theory based on the quantum Boltzmann equation, to investigate electron-electron collisions in graphene during the very early stages of relaxation. We identify the fundamental physical mechanisms controlling the ultrafast dynamics in graphene, in particular the significant role of ultrafast collinear scattering, enabling Auger processes, including charge multiplication, key to improving photovoltage generation and photodetectors.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Atomic force microscope nanolithography of graphene: cuts, pseudo-cuts and tip current measurements

We investigate atomic force microscope nanolithography of single and bilayer graphene. In situ tip current measurements show that cutting of graphene is not current driven. Using a combination of transport measurements and scanning electron microscopy we show that, while indentations accompanied by tip current appear in the graphene lattice for a range of tip voltages, real cuts are characterized by a strong reduction of the tip current above a threshold voltage. The reliability and flexibility of the technique is demonstrated by the fabrication, measurement, modification and re-measurement of graphene nanodevices with resolution down to 15 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Ink-Jet Printed Graphene Electronics

We demonstrate ink-jet printing as a viable method for large area fabrication of graphene devices. We produce a graphene-based ink by liquid phase exfoliation of graphite in N-Methylpyrrolidone. We use it to print thin-film transistors, with mobilities up to~95cm^2V^(-1)s(-1), as well as transparent and conductive patterns, with~80 % transmittance and~30kOhm/sq sheet resistance. This paves the way to all-printed, flexible and transparent graphene devices on arbitrary substrates

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Quantifying defects in graphene via Raman spectroscopy at different excitation energies

We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities for a given defect density strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all excitations, the D to G intensity ratio reaches a maximum for an inter-defect distance ~3nm. Thus, a given ratio could correspond to two different defect densities, above or below the maximum. The analysis of the G peak width and its dispersion with excitation energy solves this ambiguity.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Strong Plasmonic Enhancement of Photovoltage in Graphene

Amongst the wide spectrum of potential applications of graphene, ranging from transistors and chemical-sensors to nanoelectromechanical devices and composites, the field of photonics and optoelectronics is believed to be one of the most promising. Indeed, graphene's suitability for high-speed photodetection was demonstrated in an optical communication link operating at 10 Gbit/s\cite. However, the low responsivity of graphene-based photodetectors compared to traditional III-V based ones is a potential drawback. Here we show that, by combining graphene with plasmonic nanostructures, the efficiency of graphene-based photodectors can be increased by up to 20 times, due to field concentration in the area of a p-n junction. Additionally, wavelength and polarization selectivity can be achieved employing nanostructures of different geometries.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The Shear Mode of Multi-Layer Graphene

We uncover the interlayer shear mode of multi-layer graphene samples, ranging from bilayer-graphene (BLG) to bulk graphite, and show that the corresponding Raman peak measures the interlayer coupling. This peak scales from~43cm-1 in bulk graphite to~31cm-1 in BLG. Its low energy makes it a probe of near-Dirac point quasi-particles, with a Breit-Wigner-Fano lineshape due to resonance with electronic transitions. Similar shear modes are expected in all layered materials, providing a direct probe of interlayer interactions

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Brownian Motion of Graphene

We study the Brownian motion (BM) of optically trapped graphene flakes. These orient orthogonal to the light polarization, due to the optical constants anisotropy. We explain the flake dynamics, measure force and torque constants and derive a full electromagnetic theory of optical trapping. The understanding of two dimensional BM paves the way to light-controlled manipulation and all-optical sorting of biological membranes and anisotropic macromolecules.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Graphene Photonics and Optoelectronics

The richness of optical and electronic properties of graphene attracts enormous interest. Graphene has high mobility and optical transparency, in addition to flexibility, robustness and environmental stability. So far, the main focus has been on fundamental physics and electronic devices. However, we believe its true potential to be in photonics and optoelectronics, where the combination of its unique optical and electronic properties can be fully exploited, even in the absence of a bandgap, and the linear dispersion of the Dirac electrons enables ultra-wide-band tunability. The rise of graphene in photonics and optoelectronics is shown by several recent results, ranging from solar cells and light emitting devices, to touch screens, photodetectors and ultrafast lasers. Here we review the state of the art in this emerging field.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Intercalation of Few-Layer Graphite Flakes with FeCl3: Raman Determination of Fermi Level, Layer Decoupling and Stability

We use anhydrous ferric chloride (FeCl3) to intercalate graphite flakes consisting of 2 to 4 graphene layers and to dope graphene monolayers. The intercalant, staging, stability and doping of the resulting intercalation compounds (ICs) are characterized by Raman scattering. The G peak of monolayer graphene heavily-doped by FeCl3 upshifts to~1627cm-1. 2-4 layer ICs have similar upshifts, and a Lorentzian lineshape for the 2D band, indicating that each layer behaves as a decoupled heavily doped monolayer. By performing Raman measurement at different excitation energies we show that, for a given doping level, the 2D peak can be suppressed by Pauli blocking for laser energy below the doping level. Thus, multi-wavelength Raman spectroscopy allows a direct evaluation of the Fermi level, complementary to that derived by Raman measurements at excitation energies higher than the doping level. We estimate a Fermi level shift of~0.9eV. These ICs are ideal test-beds for the physical and chemical properties of heavily-doped graphenes.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Sub 200fs pulse generation from a graphene mode-locked fiber laser

Ultrafast fiber lasers with short pulses and broad bandwidth are in great demand for a variety of applications, such as spectroscopy, biomedical diagnosis and optical communications. In particular sub-200fs pulses are required for ultrafast spectroscopy with high temporal resolution. Graphene is an ideal ultra-wide-band saturable absorber. We report the generation of 174fs pulses from a graphene-based fiber laser

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tilted potential induced coupling of localized states in a graphene nanoconstriction

We use the charged tip of a low temperature scanning probe microscope to perturb the transport through a graphene nanoconstriction. Maps of the conductance as a function of tip position display concentric halos, and by following the expansion of the halos with back-gate voltage we are able to identify an elongated domain over the nanoconstriction where they originate. Amplitude modulations of the transmission resonances are correlated with the gradient of the tip-induced potential and we analyze this in terms of modified coupling between localized states.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene

Raman spectroscopy is a fast, non-destructive means to characterize graphene samples. In particular, the Raman spectra show a significant dependence on doping. While the change in position and width of the G peak can be explained by the non-adiabatic Kohn anomaly at $Γ$, the significant doping dependence of the 2D peak intensity has not been explained yet. Here we show that this is due to a combination of electron-phonon and electron-electron scattering. Under full resonance, the photogenerated electron-hole pairs can scatter not just with phonons, but also with doping-induced electrons or holes, and this changes the intensity. We explain the doping dependence and show how it can be used to determine the corresponding electron-phonon coupling. This is higher than predicted by density-functional theory, as a consequence of renormalization by Coulomb interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Graphene Mode-Locked Ultrafast Laser

Graphene is at the center of a significant research effort. Near-ballistic transport at room temperature and high mobility make it a potential material for nanoelectronics. Its electronic and mechanical properties are also ideal for micro and nanomechanical systems, thin-film transistors and transparent and conductive composites and electrodes. Here we exploit the optoelectronic properties of graphene to realize an ultrafast laser. A graphene-polymer composite is fabricated using wet-chemistry techniques. Pauli blocking following intense illumination results in saturable absorption, independent of wavelength. This is used to passively mode-lock an Erbium-doped fibre laser working at 1559nm, with a 5.24nm spectral bandwidth and ~460fs pulse duration, paving the way to graphene-based photonics.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Scanning gate microscopy of current-annealed single layer graphene

We have used scanning gate microscopy to explore the local conductivity of a current-annealed graphene flake. A map of the local neutrality point (NP) after annealing at low current density exhibits micron-sized inhomogeneities. Broadening of the local e-h transition is also correlated with the inhomogeneity of the NP. Annealing at higher current density reduces the NP inhomogeneity, but we still observe some asymmetry in the e-h conduction. We attribute this to a hole doped domain close to one of the metal contacts combined with underlying striations in the local NP.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

High yield production of graphene by liquid phase exfoliation of graphite

Graphene is at the centre of nanotechnology research. In order to fully exploit its outstanding properties, a mass production method is necessary. Two main routes are possible: large-scale growth or large-scale exfoliation. Here, we demonstrate graphene dispersions with concentrations up to ~0.01 mg/ml by dispersion and exfoliation of graphite in organic solvents such as N-methyl-pyrrolidone. This occurs because the energy required to exfoliate graphene is balanced by the solvent-graphene interaction for solvents whose surface energy matches that of graphene. We confirm the presence of individual graphene sheets with yields of up to 12% by mass, using absorption spectroscopy, transmission electron microscopy and electron diffraction. The absence of defects or oxides is confirmed by X-ray photoelectron, infra-red and Raman spectroscopies. We can produce conductive, semi-transparent films and conductive composites. Solution processing of graphene opens up a whole range of potential large-scale applications from device or sensor fabrication to liquid phase chemistry.

0 citations0 reviewsNo code linkedOpen access
preprint2008arXiv

Phonon renormalisation in doped bilayer graphene

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $Γ$ point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This results in a change of slope in the variation of G peak position with doping, which allows a direct measurement of the interlayer coupling strength.

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preprint2007arXiv

Exciton energy transfer in nanotube bundles

Photoluminescence is commonly used to identify the electronic structure of individual nanotubes. But, nanotubes naturally occur in bundles. Thus, we investigate photoluminescence of nanotube bundles. We show that their complex spectra are simply explained by exciton energy transfer between adjacent tubes, whereby excitation of large gap tubes induces emission from smaller gap ones via Forster interaction between excitons. The consequent relaxation rate is faster than non-radiative recombination, leading to enhanced photoluminescence of acceptor tubes. This fingerprints bundles with different compositions and opens opportunities to optimize them for opto-electronics.

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preprint2004arXiv

Kohn Anomalies and Electron-Phonon Interaction in Graphite

We demonstrate that graphite phonon dispersions have two Kohn anomalies at the Gamma-E_2g and K-A'1 modes. The anomalies are revealed by two sharp kinks. By an exact analytic derivation, we show that the slope of these kinks is proportional to the square of the electron-phonon coupling (EPC). Thus, we can directly measure the EPC from the experimental dispersions. The Gamma-E_2g and K-A'1 EPCs are particularly large, whilst they are negligible for all the other modes at Gamma and K.

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