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A. Marty

A. Marty appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallphysics.ins-det

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Published work

16 published item(s)

preprint2022arXiv

Alloying 2D VSe2 with Pt: from a charge density wave state to a disordered insulator

We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few nanometres in diameter) exhibiting the characteristic superstructure of the charge density wave (CDW) state of pristine VSe2 monolayer remain visible on most of the sample surface. Thus alloying preserves the short range order of the CDW phase, although it destroys its long range order. For higher Pt concentration (x=0.35) a disordered alloy forms. It presents a fully developped gap (a few tens meV in width) at the Fermi level and is thus a disordered insulator. This gap exhibits strong variations at the nanometer scale, reflecting the local fluctuations in the composition. An unexpectedly large interaction of the TMD layer with the graphene substrate sets in for this composition range.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical detection of magnetic circular dichroism: application to magnetic microscopy in ultra-thin ferromagnetic films

Imaging the magnetic configuration of thin-films has been a long-standing area of research. Since a few years, the emergence of two-dimensional ferromagnetic materials calls for innovation in the field of magnetic imaging. As the magnetic moments are extremely small, standard techniques like SQUID, torque magnetometry, magnetic force microscopy and Kerr effect microscopy are challenging and often lead to the detection of parasitic magnetic contributions or spurious effects. In this work, we report a new magnetic microscopy technique based on the combination of magnetic circular dichroism and Seebeck effect in semiconductor/ferromagnet bilayers. We implement this method with perpendicularly magnetized (Co/Pt) multilayers sputtered on Ge (111). We further show that the electrical detection of MCD is more sensitive than the Kerr magnetometry, especially in the ultra-thin film regime, which makes it particularly promising for the study of emergent two-dimensional ferromagnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states

The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Spin-orbitronics at a topological insulator-semiconductor interface

Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Calculation method of spin accumulations and spin signals in nanostructures using spin resistors

The understanding and calculation of spin transport are essential elements for the development of spintronics devices. Here, we propose a simple method to calculate analytically the spin accumulations, spin currents and magnetoresistances in complex systems. This can be used both for CPP experiments in multilayers and for multiterminal nanostructures made of semiconductors, oxides, metals and carbon allotropes.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Comparison of the use of NiFe and CoFe as electrodes for metallic lateral spin-valves

Spin injection and detection in Co60Fe40-based all-metallic lateral spin-valves have been studied at both room and low temperatures. The obtained spin signals amplitudes have been compared to that of identical Ni80Fe20-based devices. The replacement of Ni80Fe20 by CoFe allows increasing the spin signal amplitude by up to one order of magnitude, thus reaching 50 mΩ at room temperature. The spin signal dependence with the distance between the ferromagnetic electrodes has been analyzed using both a 1D spin transport model and finite elements method simulations. The enhancement of the spin signal amplitude when using CoFe electrodes can be explained by a higher effective polarization.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Evaluation of the spin diffusion length of AuW alloy by spin absorption experiments in the limit of large spin-orbit interactions

The knowledge of the spin diffusion length $λ_{A}$ is a prerequisite for the estimation of the spin Hall angle. We investigate spin current absorption of materials with small $λ_{A}$ using AuW stripes inserted in lateral spin-valves. Width variations of the AuW stripe lead to drastic changes of the spin absorption, which cannot be explained by conventional analysis. We show that the spin-current polarization and the spin accumulation attenuation in the vicinity of the spin absorber must to be precisely taken into account for accurate estimation of $λ_{A}$. We propose an analytical model supported by numerical calculations that allows to extract proper $λ_{A}$ values of spin Hall effect materials.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Spin-pumping into surface states of topological insulator α-Sn, spin to charge conversion at room temperature

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Core-shell nanostructure in a Ge_0.9Mn_0.1 film from structural and magnetic measurements

We have characterized a film of Ge_0.9Mn_0.1 forming self-organized nanocolumns perpendicular to the Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, and bulk magnetization and positive muon spin rotation and relaxation (muSR) measurements. The Mn-rich nanocolumns form a triangular lattice with no detectable Mn atoms in the matrix. They consist of cores surrounded by shells. The combined analysis of bulk magnetization and muSR data enables us to characterize the electronic and magnetic properties of both the cores and shells. The discovered phase separation of the columns between a core and a shell is probably relevant for other transition-metal doped semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin Pumping and Inverse Spin Hall Effect in Germanium

We have measured the inverse spin Hall effect (ISHE) in \textit{n}-Ge at room temperature. The spin current in germanium was generated by spin pumping from a CoFeB/MgO magnetic tunnel junction in order to prevent the impedance mismatch issue. A clear electromotive force was measured in Ge at the ferromagnetic resonance of CoFeB. The same study was then carried out on several test samples, in particular we have investigated the influence of the MgO tunnel barrier and sample annealing on the ISHE signal. First, the reference CoFeB/MgO bilayer grown on SiO$_{2}$ exhibits a clear electromotive force due to anisotropic magnetoresistance and anomalous Hall effect which is dominated by an asymmetric contribution with respect to the resonance field. We also found that the MgO tunnel barrier is essential to observe ISHE in Ge and that sample annealing systematically lead to an increase of the signal. We propose a theoretical model based on the presence of localized states at the interface between the MgO tunnel barrier and Ge to account for these observations. Finally, all of our results are fully consistent with the observation of ISHE in heavily doped $n$-Ge and we could estimate the spin Hall angle at room temperature to be $\approx$0.001.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Electrical and thermal spin accumulation in germanium

In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Electrical spin injection and detection in Germanium using three terminal geometry

In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Micromagnetic study of flux-closure states in Fe dots using quantitative Lorentz Microscopy

A micromagnetic study of epitaxial micron-sized iron dots is reported through the analysis of Fresnel contrast in Lorentz Microscopy. Their use is reviewed and developed through analysis of various magnetic structures in such dots. Simple Landau configuration is used to investigate various aspects of asymmetric Bloch domain walls. The experimental width of such a complex wall is first derived and its value is discussed with the help of micromagnetic simulations. Combination of these two approaches enables us to define what is really extracted when estimating asymmetric wall width in Lorentz Microscopy. Moreover, quantitative data on the magnetization inside the dot is retrieved using phase retrieval as well as new informations on the degrees of freedom of such walls. Finally, it is shown how the existence and the propagation of a surface vortex can be characterized and monitored. This demonstrates the ability to reach a magnetic sensitivity a priori hidden in Fresnel contrast, based on an original image treatment and backed-up by the evaluation of contrasts obtained from micromagnetic simulations.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Origin of perpendicular anisotropy in thin Co/Pt bilayers grown on alumina

We investigate in this paper the origin of perpendicular anisotropy in Co (1.6 nm)/Pt (3.0 nm) bilayers grown on alumina and annealed up to 650$^{\circ}$C. Above 350$^{\circ}$C, all layers exhibit perpendicular anisotropy. Then coercive fields increase linearly with annealing temperature following two different rates: 0.05 T/100$^{\circ}$C below 550$^{\circ}$C and 0.8 T/100$^{\circ}$C above. By making careful structural characterizations using x-ray diffraction and transmission electron microscopy, we demonstrate the presence of short range correlation of L1$_{1}$ type below 550$^{\circ}$C whereas above 550$^{\circ}$C, L1$_{0}$ chemical ordering is observed. We conclude that perpendicular anisotropy observed in Co/Pt bilayers grown on alumina and annealed may not only be due to interface anisotropy as usually invoked but also to CoPt alloying and chemical ordering that take place during post-growth annealing.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Dimensionality cross-over in magnetism: from domain walls (2D) to vortices (1D)

Dimensionality cross-over is a classical topic in physics. Surprisingly it has not been searched in micromagnetism, which deals with objects such as domain walls (2D) and vortices (1D). We predict by simulation a second-order transition between these two objects, with the wall length as the Landau parameter. This was conrmed experimentally based on micron-sized ux-closure dots.

0 citations0 reviewsNo code linkedOpen access