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Researcher profile

C. Vergnaud

C. Vergnaud contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hall

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Published work

4 published item(s)

preprint2022arXiv

Alloying 2D VSe2 with Pt: from a charge density wave state to a disordered insulator

We have analyzed by means of scanning tunneling microscopy and spectroscopy the atomic and electronic structure of monolayers of 1T-VxPt1-xSe2 alloys grown by molecular beam epitaxy on epitaxial graphene substrates. We have focused on the composition range (0.1<x<0.35) where ferromagnetic behaviour has recently been demonstrated. For low Pt concentration, (x=0.07 and x=0.21), small domains (a few nanometres in diameter) exhibiting the characteristic superstructure of the charge density wave (CDW) state of pristine VSe2 monolayer remain visible on most of the sample surface. Thus alloying preserves the short range order of the CDW phase, although it destroys its long range order. For higher Pt concentration (x=0.35) a disordered alloy forms. It presents a fully developped gap (a few tens meV in width) at the Fermi level and is thus a disordered insulator. This gap exhibits strong variations at the nanometer scale, reflecting the local fluctuations in the composition. An unexpectedly large interaction of the TMD layer with the graphene substrate sets in for this composition range.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Electrical detection of magnetic circular dichroism: application to magnetic microscopy in ultra-thin ferromagnetic films

Imaging the magnetic configuration of thin-films has been a long-standing area of research. Since a few years, the emergence of two-dimensional ferromagnetic materials calls for innovation in the field of magnetic imaging. As the magnetic moments are extremely small, standard techniques like SQUID, torque magnetometry, magnetic force microscopy and Kerr effect microscopy are challenging and often lead to the detection of parasitic magnetic contributions or spurious effects. In this work, we report a new magnetic microscopy technique based on the combination of magnetic circular dichroism and Seebeck effect in semiconductor/ferromagnet bilayers. We implement this method with perpendicularly magnetized (Co/Pt) multilayers sputtered on Ge (111). We further show that the electrical detection of MCD is more sensitive than the Kerr magnetometry, especially in the ultra-thin film regime, which makes it particularly promising for the study of emergent two-dimensional ferromagnetic materials.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states

The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states.

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preprint2019arXiv

Spin-orbitronics at a topological insulator-semiconductor interface

Topological insulators (TIs) hold great promises for new spin-related phenomena and applications thanks to the spin texture of their surface states. However, a versatile platform allowing for the exploitation of these assets is still lacking due to the difficult integration of these materials with the mainstream Si-based technology. Here, we exploit germanium as a substrate for the growth of Bi$_2$Se$_3$, a prototypical TI. We probe the spin properties of the Bi$_2$Se$_3$/Ge pristine interface by investigating the spin-to-charge conversion taking place in the interface states by means of a non-local detection method. The spin population is generated by optical orientation in Ge, and diffuses towards the Bi$_2$Se$_3$ which acts as a spin detector. We compare the spin-to-charge conversion in Bi$_2$Se$_3$/Ge with the one taking place in Pt in the same experimental conditions. Notably, the sign of the spin-to-charge conversion given by the TI detector is reversed compared to the Pt one, while the efficiency is comparable. By exploiting first-principles calculations, we ascribe the sign reversal to the hybridization of the topological surface states of Bi$_2$Se$_3$ with the Ge bands. These results pave the way for the implementation of highly efficient spin detection in TI-based architectures compatible with semiconductor-based platforms.

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