Abstract

In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al2_{2}O3_{3} spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al2_{2}O3_{3}/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.

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