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Researcher profile

Th. Seyller

Th. Seyller contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-elcond-mat.other

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Published work

11 published item(s)

preprint2015arXiv

Rashba splitting of 100 meV in Au-intercalated graphene on SiC

Intercalation of Au can produce giant Rashba-type spin-orbit splittings in graphene but this has not yet been achieved on a semiconductor substrate. For graphene/SiC(0001), Au intercalation yields two phases with different doping. Here, we report the preparation of an almost pure p-type graphene phase after Au intercalation. We observe a 100 meV Rashba-type spin-orbit splitting at 0.9 eV binding energy. We show that this giant splitting is due to hybridization and much more limited in energy and momentum space than for Au-intercalated graphene on Ni.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Terahertz ratchet effects in graphene with a lateral superlattice

Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Classical to quantum crossover of the cyclotron resonance in graphene: A study of the strength of intraband absorption

We report on absolute magneto-transmission experiments on highly-doped quasi-free-standing epitaxial graphene targeting the classical-to-quantum crossover of the cyclotron resonance. This study allows us to directly extract the carrier density and also other relevant quantities such as the quasiparticle velocity and the Drude weight, which is precisely measured from the strength of the cyclotron resonance. We find that the Drude weight is renormalized with respect to its non-interacting (or random-phase-approximation) value and that the renormalization is tied to the quasiparticle velocity enhancement. This finding is in agreement with recent theoretical predictions, which attribute the renormalization of the Drude weight in graphene to the interplay between broken Galilean invariance and electron-electron interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Intrinsic Terahertz Plasmons and Magnetoplasmons in Large Scale Monolayer Graphene

We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitation of the plasmon modifies dramatically the magneto-optical response and in particular the Faraday rotation. This makes graphene a unique playground for plasmon-controlled magneto-optical phenomena thanks to a cyclotron mass 2 orders of magnitude smaller than in conventional plasmonic materials such as noble metals.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Doping of epitaxial graphene on SiC intercalated with hydrogen and its magneto-oscillations

We study the charge transfer between a quasi-free-standing monolayer graphene, produced by hydrogen intercalation, and surface acceptor states. We consider two models of acceptor density of states to explain the high hole densities observed in graphene and find the density responsivity to the gate voltage. By studying magneto-oscillations of the carrier density we provide an experimental way to determine the relevant model.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Multi-component magneto-optical conductivity of multilayer graphene on SiC

Far-infrared diagonal and Hall conductivities of multilayer epitaxial graphene on the C-face of SiC were measured using magneto-optical absorption and Faraday rotation in magnetic fields up to 7 T and temperatures between 5 and 300 K. Multiple components are identified in the spectra, which include: (i) a quasi-classical cyclotron resonance (CR), originating from the highly doped graphene layer closest to SiC, (ii) transitions between low-index Landau levels (LLs), which stem from weakly doped layers and (iii) a broad optical absorption background. Electron and hole type LL transitions are optically distinguished and shown to coexist. An electron-hole asymmetry of the Fermi velocity of about 2% was found within one graphene layer, while the Fermi velocity varies by about 10% across the layers. The optical intensity of the LL transitions is several times smaller than what is theoretically expected for isolated graphene monolayers without electron-electron and electron-phonon interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The Origin of Doping in Quasi-Free Standing Graphene on Silicon Carbide

We explain the robust p-type doping observed for quasi-free standing graphene on hexagonal silicon carbide by the spontaneous polarization of the substrate. This mechanism is based on a bulk property of SiC, unavoidable for any hexagonal polytype of the material and independent of any details of the interface formation. We show that sign and magnitude of the polarization are in perfect agreement with the doping level observed in the graphene layer. With this mechanism, models based on hypothetical acceptor-type defects as they are discussed so far are obsolete. The n-type doping of epitaxial graphene is explained conventionally by donor-like states associated with the buffer layer and its interface to the substrate which overcompensate the polarization doping.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

The quasi-free-standing nature of graphene on H-saturated SiC(0001)

We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy we prove that the SiC(0001) surface is saturated with hydrogen. Raman spectra demonstrate the conversion of the buffer layer into graphene which exhibits a slight tensile strain and short range defects. The layers are hole doped (p = 5.0-6.5 x 10^12 cm^(-2)) with a carrier mobility of 3,100 cm^2/Vs at room temperature. Compared to graphene on the buffer layer a strongly reduced temperature dependence of the mobility is observed for graphene on H-terminated SiC(0001)which justifies the term "quasi-free-standing".

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Versatile sputtering technology for Al2O3 gate insulators on graphene

We report a novel fabrication method of graphene Al2O3 gate insulators based on sputtering. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition (ALD) with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2/Vs in graphene and 350 cm2/Vs in its bilayer due to increased resonant scattering on atomic scale defects. Most likely this originated from the thin Al precursor layer evaporated prior to sputtering the Al2O3 gate oxide.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Strong phonon-plasmon coupled modes in the graphene/silicon carbide heterosystem

We report on strong coupling of the charge carrier plasmon $ω_{PL}$ in graphene with the surface optical phonon $ω_{SO}$ of the underlying SiC(0001) substrate with low electron concentration ($n=1.2\times 10^{15}$ $cm^{-3}$) in the long wavelength limit ($q_\parallel \rightarrow 0$). Energy dependent energy-loss spectra give for the first time clear evidence of two coupled phonon-plasmon modes $ω_\pm$ separated by a gap between $ω_{SO}$ ($q_\parallel \rightarrow 0$) and $ω_{TO}$ ($q_\parallel >> 0$), the transverse optical phonon mode, with a Fano-type shape, in particular for higher primary electron energies ($E_0 \ge 20eV$). A simplified model based on dielectric theory is able to simulate our energy - loss spectra as well as the dispersion of the two coupled phonon-plasmon modes $ω_\pm$. In contrast, Liu and Willis [1] postulate in their recent publication no gap and a discontinuous dispersion curve with a one-peak structure from their energy-loss data.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

0 citations0 reviewsNo code linkedOpen access