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A. Fert

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Published work

30 published item(s)

preprint2022arXiv

Large interfacial Rashba interaction and giant spin-orbit torques in atomically thin metallic heterostructures

The ability of spin-orbit interactions to convert charge current into spin current, most often in the bulk of heavy metal thin films, has been the hallmark of spintronics in the last decade. In this study, we demonstrate how the insertion of light metal element interface profoundly affects both the nature of spin-orbit torque and its efficiency in terms of damping-like ($H_{\text{DL}}$) and field-like ($H_{\text{FL}}$) effective fields in ultrathin Co ferromagnet. Indeed, we measure unexpectedly large $H_{\text{FL}}$/$H_{\text{DL}}$ ratio ($\sim$2.5) upon inserting a 1.4 nm thin Al layer in Pt|Co|Al|Pt as compared to a similar stacking including Cu instead of Al. From our modelling, these results strongly evidence the presence of large Rashba interaction at Co|Al interface producing a giant $H_{\text{FL}}$, which was not expected from a metallic interface. The occurrence of such enhanced torques from an interfacial origin is further validated by demonstrating current-induced magnetization reversal showing a significant decrease of the critical current for switching.

preprint2020arXiv

Determining the Rashba parameter from the bilinear magnetoresistance response in a two-dimensional electron gas

Two-dimensional (2D) Rashba systems have been intensively studied in the last decade due to their unconventional physics, tunability capabilities, and potential for spin-charge interconversion when compared to conventional heavy metals. With the advent of a new generation of spin-based logic and memory devices, the search for Rashba systems with more robust and larger conversion efficiencies is expanding. Conventionally, demanding techniques such as angle- and spin-resolved photoemission spectroscopy are required to determine the Rashba parameter $α_{R}$ that characterizes these systems. Here, we introduce a simple method that allows a quantitative extraction of $α_{R}$, through the analysis of the bilinear response of angle-dependent magnetotransport experiments. This method is based on the modulation of the Rashba-split bands under a rotating in-plane magnetic field. We show that our method is able to correctly yield the value of $α_{R}$ for a wide range of Fermi energies in the 2D electron gas at the LaAlO$_{3}$/SrTiO$_{3}$ interface. By applying a gate voltage, we observe a maximum $α_{R}$ in the region of the band structure where interband effects maximize the Rashba effect, consistently with theoretical predictions.

preprint2020arXiv

Large Rashba unidirectional magnetoresistance in the Fe/Ge(111) interface states

The structure inversion asymmetry at surfaces and interfaces give rise to the Rashba spin-orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence, when an electric current runs through a surface or interface, this Rashba effect generates an effective magnetic field acting on the electron spin. This provides an additional tool to manipulate the spin state in materials such as Si and Ge that, in their bulk form, possess inversion symmetry (or lack structural inersion asymmetry). The existence of Rashba states could be demonstrated by photoemission spectroscopy at the interface between different metals and Ge(111) and by spin-charge conversion experiments at the Fe/Ge(111) interface even though made of two light elements. In this work, we identify the fingerprint of the Rashba states at the Fe/Ge(111) interface by magnetotransport measurements in the form of a large unidirectional magnetoresistance of up to 0.1 \%. From its temperature dependence, we find that the Rashba energy splitting is larger than in pure Ge(111) subsurface states.

preprint2020arXiv

The 2020 Skyrmionics Roadmap

The notion of non-trivial topological winding in condensed matter systems represents a major area of present-day theoretical and experimental research. Magnetic materials offer a versatile platform that is particularly amenable for the exploration of topological spin solitons in real space such as skyrmions. First identified in non-centrosymmetric bulk materials, the rapidly growing zoology of materials systems hosting skyrmions and related topological spin solitons includes bulk compounds, surfaces, thin films, heterostructures, nano-wires and nano-dots. This underscores an exceptional potential for major breakthroughs ranging from fundamental questions to applications as driven by an interdisciplinary exchange of ideas between areas in magnetism which traditionally have been pursued rather independently. The skyrmionics roadmap provides a review of the present state of the art and the wide range of research directions and strategies currently under way. These are, for instance, motivated by the identification of the fundamental structural properties of skyrmions and related textures, processes of nucleation and annihilation in the presence of non-trivial topological winding, an exceptionally efficient coupling to spin currents generating spin transfer torques at tiny current densities, as well as the capability to purpose-design broad-band spin dynamic and logic devices.

preprint2019arXiv

Theory of bi-linear magnetoresistance within the minimal model for surface states in topological insulators

A new mechanism of bi-linear magnetoresistance (BMR) is studied theoretically within the minimal model describing surface electronic states in topological insulators (TIs). The BMR appears as a consequence of the second-order response to electric field, and depends linearly on both electric field (current) and magnetic field. The mechanism is based on the interplay of current-induced spin polarization and scattering processes due to peculiar spin-orbit defects. The proposed mechanism is compared to that based on a Fermi surface warping, and is shown to be dominant at lower Fermi energies. We provide a consistent theoretical approach based on the Green function formalism and show that the magnetic field dependent relaxation processes in the presence of non-equilibrium current-induced spin polarization give rise to the BMR.

preprint2016arXiv

Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces

The spin-orbit interaction couples the electrons' motion to their spin. Accordingly, passing a current in a material with strong spin-orbit coupling generates a transverse spin current (spin Hall effect, SHE) and vice-versa (inverse spin Hall effect, ISHE). The emergence of SHE and ISHE as charge-to-spin interconversion mechanisms offers a variety of novel spintronics functionalities and devices, some of which do not require any ferromagnetic material. However, the interconversion efficiency of SHE and ISHE (spin Hall angle) is a bulk property that rarely exceeds ten percent, and does not take advantage of interfacial and low-dimensional effects otherwise ubiquitous in spintronics hetero- and mesostructures. Here, we make use of an interface-driven spin-orbit coupling mechanism - the Rashba effect - in the oxide two-dimensional electron system (2DES) LaAlO3/SrTiO3 to achieve spin-to-charge conversion with unprecedented efficiency. Through spin-pumping, we inject a spin current from a NiFe film into the oxide 2DES and detect the resulting charge current, which can be strongly modulated by a gate voltage. We discuss the amplitude of the effect and its gate dependence on the basis of the electronic structure of the 2DES.

preprint2015arXiv

Spin-pumping into surface states of topological insulator α-Sn, spin to charge conversion at room temperature

We present experimental results on the conversion of a spin current into a charge current by spin pumping into the Dirac cone with helical spin polarization of the elemental topological insulator (TI) α-Sn[1-3]. By angle-resolved photoelectron spectroscopy (ARPES) we first confirm that the Dirac cone at the surface of α-Sn (0 0 1) layers subsists after covering with Ag. Then we show that resonant spin pumping at room temperature from Fe through Ag into α-Sn layers induces a lateral charge current that can be ascribed to the Inverse Edelstein Effect[4-5]. Our observation of an Inverse Edelstein Effect length[5-6] much longer than for Rashba interfaces[5-10] demonstrates the potential of the TI for conversion between spin and charge in spintronic devices. By comparing our results with data on the relaxation time of TI free surface states from time-resolved ARPES, we can anticipate the ultimate potential of TI for spin to charge conversion and the conditions to reach it.

preprint2015arXiv

Strong Suppression of the Spin Hall Effect in the Spin Glass State

We have measured spin Hall effects in spin glass metals, CuMnBi alloys, with the spin absorption method in the lateral spin valve structure. Far above the spin glass temperature Tg where the magnetic moments of Mn impurities are randomly frozen, the spin Hall angle of CuMnBi ternary alloy is as large as that of CuBi binary alloy. Surprisingly, however, it starts to decrease at about 4Tg and becomes as little as 7 times smaller at 0.5Tg. A similar tendency was also observed in anomalous Hall effects in the ternary alloys. We propose an explanation in terms of a simple model considering the relative dynamics between the localized moment and the conduction electron spin.

preprint2014arXiv

Experimental evidences of a large extrinsic spin Hall effect in AuW alloy

We report an experimental study of a gold-tungsten alloy (7% at. W concentration in Au host) displaying remarkable properties for spintronics applications using both magneto-transport in lateral spin valve devices and spin-pumping with inverse spin Hall effect experiments. A very large spin Hall angle of about 10% is consistently found using both techniques with the reliable spin diffusion length of 2 nm estimated by the spin sink experiments in the lateral spin valves. With its chemical stability, high resistivity and small induced damping, this AuW alloy may find applications in the nearest future.

preprint2014arXiv

Extrinsic spin Hall effects measured with lateral spin valve structures

The spin Hall effect (SHE), induced by spin-orbit interaction in nonmagnetic materials, is one of the promising phenomena for conversion between charge and spin currents in spintronic devices. The spin Hall (SH) angle is the characteristic parameter of this conversion. We have performed experiments of the conversion from spin into charge currents by the SHE in lateral spin valve structures. We present experimental results on the extrinsic SHEs induced by doping nonmagnetic metals, Cu or Ag, with impurities having a large spin-orbit coupling, Bi or Pb, as well as results on the intrinsic SHE of Au. The SH angle induced by Bi in Cu or Ag is negative and particularly large for Bi in Cu, 10 times larger than the intrinsic SH angle in Au. We also observed a large SH angle for CuPb but the SHE signal disappeared in a few days. Such an aging effect could be related to a fast mobility of Pb in Cu and has not been observed in CuBi alloys.

preprint2014arXiv

Inverse spin Hall effect in a closed loop circuit

We present measurements of inverse spin Hall effects (ISHEs) in which the conversion of a spin current into a charge current via the ISHE is detected not as a voltage in a standard open circuit but directly as the charge current generated in a closed loop. The method is applied to the ISHEs of Bi-doped Cu and Pt. The derived expression of ISHE for the loop structure can relate the charge current flowing into the loop to the spin Hall angle of the SHE material and the resistance of the loop.

preprint2014arXiv

Revisiting the measurement of the spin relaxation time in graphene-based devices

A long spin relaxation time (tausf) is the key for the applications of graphene to spintronics but the experimental values of tausf have been generally much shorter than expected. We show that the usual determination by the Hanle method underestimates tausf if proper account of the spin absorption by contacts is lacking. By revisiting series of experimental results, we find that the corrected tausf are longer and less dispersed, which leads to a more unified picture of tausf derived from experiments. We also discuss how the correction depends on the parameters of the graphene and contacts.

preprint2013arXiv

Inverse Spin Hall Effect in nanometer-thick YIG/Pt system

High quality nanometer-thick (20 nm, 7 nm and 4 nm) epitaxial YIG films have been grown on GGG substrates using pulsed laser deposition. The Gilbert damping coefficient for the 20 nm thick films is 2.3 x 10-4 which is the lowest value reported for sub-micrometric thick films. We demonstrate Inverse spin Hall effect (ISHE) detection of propagating spin waves using Pt. The amplitude and the lineshape of the ISHE voltage correlate well to the increase of the Gilbert damping when decreasing thickness of YIG. Spin Hall effect based loss-compensation experiments have been conducted but no change in the magnetization dynamics could be detected.

preprint2012arXiv

Giant Spin Hall Effect Induced by Skew Scattering from Bismuth Impurities inside Thin Film CuBi Alloys

We demonstrate that a giant spin Hall effect (SHE) can be induced by introducing a small amount of Bi impurities in Cu. Our analysis based on a new 3-dimensional finite element treatment of spin transport shows that the sign of the SHE induced by the Bi impurities is negative and its spin Hall (SH) angle amounts to -0.24. Such a negative large SH angle in CuBi alloys can be explained by applying the resonant scattering model proposed by Fert and Levy [Phys. Rev. Lett. 106, 157208 (2011)] to 6p impurities.

preprint2012arXiv

Matching domain wall configuration and spin-orbit torques for very efficient domain-wall motion

In our numerical study, we identify the best conditions for efficient domain wall motion by spin-orbit torques originating from the Spin Hall effect or Rashba effect. We demonstrate that the effect depends critically on the domain wall configuration, the current injection scheme and the symmetry of the spin-orbit torque. The best identified configuration corresponds to a Néel wall driven by spin Hall Effect in a narrow strip with perpendicular magnetic anisotropy. In this case, the domain wall velocity can be a factor of 10 larger than that for the conventional current-in-plane spin-transfer torque.

preprint2011arXiv

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device.

preprint2011arXiv

Enhancement of the Spin Accumulation at the Interface Between a Spin-Polarized Tunnel Junction and a Semiconductor

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $ΔV$ at the interface as high as 1.2mV for a current density of 0.34 nA.$μm^{-2}$. This represents a dramatic increase of the spin accumulation signal, well above the theoretical predictions for spin injection through a ferromagnet/semiconductor interface. Such an enhancement is consistent with a sequential tunneling process via localized states located in the vicinity of the Al$_2$O$_3$/GaAs interface. For spin-polarized carriers these states act as an accumulation layer where the spin lifetime is large. A model taking into account the spin lifetime and the escape tunneling time for carriers travelling back into the ferromagnetic contact reproduces accurately the experimental results.

preprint2011arXiv

Extrinsic Spin Hall Effect Induced by Iridium Impurities in Copper

We study the extrinsic spin Hall effect induced by Ir impurities in Cu by injecting a pure spin current into a CuIr wire from a lateral spin valve structure. While no spin Hall effect is observed without Ir impurity, the spin Hall resistivity of CuIr increases linearly with the impurity concentration. The spin Hall angle of CuIr, $(2.1 \pm 0.6)$% throughout the concentration range between 1% and 12%, is practically independent of temperature. These results represent a clear example of predominant skew scattering extrinsic contribution to the spin Hall effect in a nonmagnetic alloy.

preprint2011arXiv

Spin-Torque Diode Measurements of MgO-Based Magnetic Tunnel Junctions with Asymmetric Electrodes

We present a detailed study of the spin-torque diode effect in CoFeB/MgO/CoFe/NiFe magnetic tunnel junctions. From the evolution of the resonance frequency with magnetic field at different angles, we clearly identify the free-layer mode and find an excellent agreement with simulations by taking into account several terms for magnetic anisotropy. Moreover, we demonstrate the large contribution of the out-of-plane torque in our junctions with asymmetric electrodes compared to the in-plane torque. Consequently, we provide a way to enhance the sensitivity of these devices for the detection of microwave frequency.

preprint2011arXiv

Temperature dependence of microwave voltage emission associated to spin-transfer induced vortex oscillation in magnetic tunnel junction

The temperature dependence of a vortex-based nano-oscillator induced by spin transfer torque (STVO) in magnetic tunnel junctions (MTJ) is considered. We obtain emitted signals with large output power and good signal coherence. Due to the reduced non-linearities compared to the uniform magnetization case, we first observe a linear decrease of linewidth with decreasing temperature. However, this expected behavior no longer applies at lower temperature and a bottom limit of the linewidth is measured.

preprint2011arXiv

Vertical current induced domain wall motion in MgO-based magnetic tunnel junction with low current densities

Shifting electrically a magnetic domain wall (DW) by the spin transfer mechanism is one of the future ways foreseen for the switching of spintronic memories or registers. The classical geometries where the current is injected in the plane of the magnetic layers suffer from a poor efficiency of the intrinsic torques acting on the DWs. A way to circumvent this problem is to use vertical current injection. In that case, theoretical calculations attribute the microscopic origin of DW displacements to the out-of-plane (field-like) spin transfer torque. Here we report experiments in which we controllably displace a DW in the planar electrode of a magnetic tunnel junction by vertical current injection. Our measurements confirm the major role of the out-of-plane spin torque for DW motion, and allow to quantify this term precisely. The involved current densities are about 100 times smaller than the one commonly observed with in-plane currents. Step by step resistance switching of the magnetic tunnel junction opens a new way for the realization of spintronic memristive devices.

preprint2010arXiv

Dynamics of two coupled vortices in a spin valve nanopillar excited by spin transfer torque

We investigate the dynamics of two coupled vortices driven by spin transfer. We are able to independently control with current and perpendicular field, and to detect, the respective chiralities and polarities of the two vortices. For current densities above $J=5.7*10^7 A/cm^2$, a highly coherent signal (linewidth down to 46 kHz) can be observed, with a strong dependence on the relative polarities of the vortices. It demonstrates the interest of using coupled dynamics in order to increase the coherence of the microwave signal. Emissions exhibit a linear frequency evolution with perpendicular field, with coherence conserved even at zero magnetic field.

preprint2010arXiv

Large microwave generation from d.c. driven magnetic vortex oscillators in magnetic tunnel junctions

Spin polarized current can excite the magnetization of a ferromagnet through the transfer of spin angular momentum to the local spin system. This pure spin-related transport phenomena leads to alluring possibilities for the achievement of a nanometer scale, CMOS compatible and tunable microwave generator operating at low bias for future wireless communications. Microwave emission generated by the persitent motion of magnetic vortices induced by spin transfer effect seems to be a unique manner to reach appropriate spectral linewidth. However, in metallic systems, where such vortex oscillations have been observed, the resulting microwave power is much too small. Here we present experimental evidences of spin-transfer induced core vortex precessions in MgO-based magnetic tunnel junctions with similar good spectral quality but an emitted power at least one order of magnitude stronger. More importantly, unlike to others spin transfer excitations, the thorough comparison between experimental results and models provide a clear textbook illustration of the mechanisms of vortex precessions induced by spin transfer.

preprint2010arXiv

Phase locking of vortex based spin transfer oscillators to a microwave current

Phase locking experiments on vortex based spin transfer oscillators with an external microwave current are performed. We present clear evidence of phase locking, frequency pulling, as well as fractional synchronization in this system, with a minimum peak linewidth of only 3 kHz in the locked state. We find that locking ranges of the order of 1/3 of the oscillator frequency are easily achievable because of the large tunability $\partial f/\partial I_{dc}$ observed in our vortex based systems. Such large locking ranges allow us to demonstrate the simultaneous phase locking of two independent oscillators connected in series with the external source.

preprint2009arXiv

Frequency converter based on nanoscale MgO magnetic tunnel junctions

We observe both dc voltage rectification and frequency conversion that occur when a reference microwave current is injected to a MgO based magnetic tunnel junction (MTJ). The rectification that is spin-transfer torque dependent is observed when the frequency of the input microwave current coincides with the resonance frequency of the magnetization of the active layer. In addition, we demonstrate that frequency conversion is the result of amplitude modulation between the reference signal and the resistance of the MTJ that is fluctuating at the resonance frequency of the magnetization of the active layer.

preprint2009arXiv

Origin of the spectral linewidth in non linear oscillators based on MgO tunnel junctions

We demonstrate the strong impact of the oscillator agility on the line broadening by studying spin transfer induced microwave emission in MgO-based tunnel junctions with current. The linewidth is almost not affected by decreasing the temperature. At very low currents, a strong enhancement of the linewidth at low temperature is attributed to an increase of the non linearity, probably due to the field-like torque. Finally we evidence that the noise is not dominated by thermal fluctuations but rather by the chaotization of the magnetization system induced by the spin transfer torque.

preprint2007arXiv

Shaped angular dependence of the spin transfer torque and microwave generation without magnetic field

The generation of oscillations in the microwave frequency range is one of the most important applications expected from spintronics devices exploiting the spin transfer phenomenon. We report transport and microwave power measurements on specially designed nanopillars for which a non-standard angular dependence of the spin transfer torque (wavy variation) is predicted by theoretical models. We observe a new kind of current-induced dynamics that is characterized by large angle precessions in the absence of any applied field, as this is also predicted by simulation with such a wavy angular dependence of the torque. This type of non-standard nanopillars can represent an interesting way for the implementation of spin transfer oscillators since they are able to generate microwave oscillations without applied magnetic field. We also emphasize the theoretical implications of our results on the angular dependence of the torque.

preprint2005arXiv

Macroscopic description of current induced switching due to spin-transfer

We develop a macroscopic description of the current-induced torque due to spin transfer in a layered system consisting of two ferromagnetic layers separated by a nonmagnetic layer. The description is based on i) the classical spin diffusion equations for the distribution functions used in the theory of CPP-GMR, ii) the relevant boundary conditions for the longitudinal and transverse components of the spin current in the situation of quasi-interfacial absorption of the transverse components in a magnetic layer. The torque is expressed as a function of the usual parameters derived from CPP-GMR experiments and two additional parameters involved in the transverse boundary conditions. Our model is used to describe qualitatively normal and inverse switching phenomena studied in recent experiments. We also present a structure for which we predict only states of steady precession above a certain critical current. We finally discuss the limits of a small angle between magnetic moments of the ferromagnetic layers and of vanishing imaginary part of the mixing conductance.

preprint2005arXiv

Spin-polarized tunneling spectroscopy in tunnel junctions with half-metallic electrodes

We have studied the magnetoresistance (TMR) of tunnel junctions with electrodes of La2/3Sr1/3MnO3 and we show how the variation of the conductance and TMR with the bias voltage can be exploited to obtain a precise information on the spin and energy dependence of the density of states. Our analysis leads to a quantitative description of the band structure of La2/3Sr1/3MnO3 and allows the determination of the gap delta between the Fermi level and the bottom of the t2g minority spin band, in good agreement with data from spin-polarized inverse photoemission experiments. This shows the potential of magnetic tunnel junctions with half-metallic electrodes for spin-resolved spectroscopic studies.

preprint2003arXiv

Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars

Combining pairs of ferromagnetic metals with different signs of scattering anisotropies, let us independently invert the magnetoresistance and the direction of current-driven switching in ferromagnetic/non-magnetic/ferromagnetic metal nanopillars. We show all four combinations of normal and inverse behaviors, at both room temperature and 4.2K. In all cases studied, the direction of switching is set by the net scattering anisotropy of the fixed (polarizing) ferromagnet. We provide simple arguments for what we see.